STF2HNK60Z [STMICROELECTRONICS]

N-CHANNEL 600V - 4.4ヘ - 2.0A TO-92/TO-220FP/IPAK Zener-Protected SuperMESH MOSFET; N沟道600V - 4.4ヘ - 2.0A TO- 92 / TO- 220FP / IPAK齐纳保护的超网MOSFET


型号：	STF2HNK60Z
厂家：	ST
描述：	N-CHANNEL 600V - 4.4ヘ - 2.0A TO-92/TO-220FP/IPAK Zener-Protected SuperMESH MOSFET N沟道600V - 4.4ヘ - 2.0A TO- 92 / TO- 220FP / IPAK齐纳保护的超网MOSFET 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总12页 (文件大小：410K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STQ2HNK60ZR-AP

STF2HNK60Z - STD2HNK60Z-1

N-CHANNEL 600V - 4.4Ω - 2.0A TO-92/TO-220FP/IPAK

Zener-Protected SuperMESH™ MOSFET

TYPE

DSS

DS(on)

STQ2HNK60ZR-AP 600 V

< 4.8 Ω 0.5 A

3 W

STD2HNK60Z-1

STF2HNK60Z

600 V

< 4.8 Ω 2.0 A 45 W

< 4.8 Ω 2.0 A 20 W

TYPICAL R (on) = 4.4Ω

EXTREMELY HIGH dv/dt CAPABILITY

ESD IMPROVED CAPABILITY

100% AVALANCHE TESTED

TO-92 (Ammopack)

TO-220FP

NEW HIGH VOLTAGE BENCHMARK

GATE CHARGE MINIMIZED

IPAK

DESCRIPTION

INTERNAL SCHEMATIC DIAGRAM

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established strip-

based PowerMESH™ layout. In addition to pushing

on-resistance significantly down, special care is tak-

en to ensure a very good dv/dt capability for the

most demanding applications. Such series comple-

ments ST full range of high voltage MOSFETs in-

cluding revolutionary MDmesh™ products.

APPLICATIONS

AC ADAPTORS AND BATTERY CHARGERS

SWITH MODE POWER SUPPLIES (SMPS)

ORDER CODES

PART NUMBER

STD2HNK60Z-1

STQ2HNK60ZR-AP

STF2HNK60Z

MARKING

D2HNK60Z

Q2HNK60ZR

F2HNK60Z

PACKAGE

IPAK

PACKAGING

TUBE

TO-92

AMMOPAK

TUBE

TO-220FP

April 2004

1/12

STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

TO-220FP

600

Unit

IPAK

TO-92

Drain-source Voltage (V = 0)

DGR

Drain-gate Voltage (R = 20 kΩ)

600

Gate- source Voltage

± 30

Drain Current (continuous) at T = 25°C

2.0

1.26

2.0 (*)

1.26 (*)

8 (*)

0.5

0.32

Drain Current (continuous) at T = 100°C

( )

Drain Current (pulsed)

TOT

Total Dissipation at T = 25°C

Derating Factor

0.36

0.16

0.025

W/°C

Gate source ESD(HBM-C=100pF, R=1.5KΩ)

Peak Diode Recovery voltage slope

Insulation Withstand Voltage (DC)

2000

4.5

ESD(G-S)

dv/dt (1)

V/ns

ISO

2500

stg

Operating Junction Temperature

Storage Temperature

-55 to 150

°C

( ) Pulse width limited by safe operating area

(1) I ≤ 2 A, di/dt ≤ 200 A/µs, V ≤ V

, T ≤ T

(BR)DSS j JMAX.

(*) Current Limited by package

THERMAL DATA

IPAK

2.77

100

TO-220FP

6.25

TO-92

Rthj-case Thermal Resistance Junction-case Max

Rthj-amb Thermal Resistance Junction-ambient Max

Rthj-lead Thermal Resistance Junction-lead Max

°C/W

°C

62.5

120

Maximum Lead Temperature For Soldering

Purpose

300

260

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Max Value

Unit

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by T max)

Single Pulse Avalanche Energy

120

(starting T = 25 °C, I = I , V = 50 V)

GATE-SOURCE ZENER DIODE

Symbol

Parameter

Test Conditions

Igs=± 1mA (Open Drain)

Min.

Typ.

Max.

Unit

Gate-Source Breakdown

Voltage

GSO

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

2/12

STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

ON/OFF

Symbol

Parameter

Drain-source

Test Conditions

Min.

Typ.

Max.

Unit

= 1 mA, V = 0

600

(BR)DSS

Breakdown Voltage

Zero Gate Voltage

= Max Rating

= Max Rating, T = 125 °C

µA

DSS

Drain Current (V = 0)

Gate-body Leakage

= ± 20V

±10

µA

GSS

Current (V = 0)

= V , I = 50 µA

Gate Threshold Voltage

3.75

4.4

4.5

4.8

GS(th)

DS(on)

Static Drain-source On

Resistance

= 10V, I = 1.0 A

Ω

DYNAMIC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

(1)

Forward Transconductance

= 15 V I = 1.0 A

1.5

, D

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

= 25V, f = 1 MHz, V = 0

280

iss

oss

rss

(3) Equivalent Output

Capacitance

= 0V, V = 0V to 480V

oss eq.

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

= 300 V, I = 1.0 A

d(on)

= 4.7Ω V = 10 V

(Resistive Load see, Figure 3)

d(off)

= 480V, I = 2.0 A,

= 10V

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

2.25

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

2.0

8.0

Source-drain Current

Source-drain Current (pulsed)

(2)

SDM

(1)

= 2.0 A, V = 0

Forward On Voltage

1.6

= 2.0 A, di/dt = 100 A/µs

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

178

445

= 20 V, T = 25°C

(see test circuit, Figure 5)

RRM

= 13 A, di/dt = 100 A/µs

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

200

500

= 20 V, T = 150°C

(see test circuit, Figure 5)

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. C

is defined as a constant equivalent capacitance giving the same charging time as C

when V increases from 0 to 80%

oss DS

oss eq.

DSS

3/12

STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1

Safe Operating Area for TO-92

Thermal Impedance for TO-92

Safe Operating Area for TO-220FP

Thermal Impedance for TO-220FP

Safe Operating Area for IPAK

Thermal Impedance for IPAK

4/12

STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1

Transfer Characteristics

Output Characteristics

Transconductance

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Capacitance Variations

5/12

STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1

Normalized Gate Thereshold Voltage vs Temp.

Normalized On Resistance vs Temperature

Normalized BVDSS vs Temperature

Source-drain Diode Forward Characteristics

Maximum Avalanche Energy vs Temperature

6/12

STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1

Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For

Fig. 4: Gate Charge test Circuit

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

7/12

STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1

TO-92 MECHANICAL DATA

mm.

inch

TYP.

DIM.

MIN.

4.32

0.36

4.45

3.30

2.41

1.14

12.70

2.16

0.92

0.41

TYP

MAX.

4.95

0.51

4.95

3.94

2.67

1.40

15.49

2.41

1.52

0.56

MIN.

0.170

0.014

0.175

0.130

0.094

0.044

0.50

MAX.

0.194

0.020

0.194

0.155

0.105

0.055

0.610

0.094

0.060

0.022

0.085

0.036

0.016

5°

8/12

STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1

TO-92 AMMOPACK

mm.

TYP

inch

DIM.

MIN.

4.45

3.30

MAX.

4.95

3.94

1.6

MIN.

0.170

0.130

TYP.

MAX.

0.194

0.155

0.06

0.09

0.022

0.51

0.27

0.11

0.08

0.74

0.24

0.36

0.02

0.80

0.65

0.98

0.16

0.035

0.43

2.3

0.41

12.5

5.65

2.44

-2

0.56

12.9

7.05

2.94

0.016

0.49

0.22

0.09

-0.08

0.69

0.22

0.33

12.7

6.35

2.54

0.5

0.25

0.1

F1, F2

delta H

17.5

5.7

0.71

0.23

0.35

6.3

8.5

9.25

0.5

18.5

15.5

20.5

16.5

0.72

0.61

0.63

3.8

4.2

0.15

0.157

0.9

0.11

delta P

-1

-0.04

0.04

9/12

STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1

TO-220FP MECHANICAL DATA

mm.

TYP

inch

TYP.

DIM.

MIN.

4.4

MAX.

4.6

2.7

2.75

0.7

MIN.

0.173

0.098

0.017

0.030

0.045

0.195

0.094

0.393

MAX.

0.181

0.106

0.108

0.027

0.039

0.067

0.204

0.106

0.409

2.5

0.45

0.75

1.15

4.95

2.4

1.7

5.2

2.7

10.4

0.630

28.6

9.8

2.9

15.9

30.6

10.6

3.6

1.126

.0385

0.114

0.626

0.354

0.118

1.204

0.417

0.141

0.645

0.366

0.126

16.4

9.3

3.2

1 2

10/12

STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1

TO-251 (IPAK) MECHANICAL DATA

inch

TYP.

DIM.

MIN.

2.2

TYP.

MAX.

2.4

MIN.

0.086

0.035

0.027

0.025

0.204

MAX.

0.094

0.043

0.051

0.031

0.212

0.033

0.9

1.1

0.7

1.3

0.64

5.2

0.9

5.4

0.85

0.3

0.012

0.95

0.6

6.2

6.6

4.6

16.3

9.4

1.2

0.037

0.023

0.244

0.260

0.181

0.641

0.370

0.047

0.039

0.45

0.48

0.017

0.019

0.236

0.252

0.173

0.626

0.354

0.031

6.4

4.4

15.9

0.8

0.031

0068771-E

11/12

STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the

consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from

its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications

mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information

previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or

systems without express written approval of STMicroelectronics.

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12/12

STF2HNK60Z [STMICROELECTRONICS]

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