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STE250NS10

更新时间：2024-09-18 01:50:59
品牌：STMICROELECTRONICS
描述：N-CHANNEL 100V - 0.0045 W - 220A ISOTOP STripFET POWER MOSFET

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STE250NS10 概述

N-CHANNEL 100V - 0.0045 W - 220A ISOTOP STripFET POWER MOSFET N沟道100V - 0.0045 W¯¯ - 220A ISOTOP的STripFET功率MOSFET MOS管 功率场效应晶体管

STE250NS10 规格参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：ISOTOP
包装说明：ROHS COMPLIANT, ISOTOP-4针数：4
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：8.61Is Samacsys：N
雪崩能效等级（Eas）：800 mJ外壳连接：ISOLATED
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：220 A最大漏极电流 (ID)：220 A
最大漏源导通电阻：0.0055 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XUFM-X4元件数量：1
端子数量：4工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：500 W最大脉冲漏极电流 (IDM)：880 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子形式：UNSPECIFIED
端子位置：UPPER处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

STE250NS10 数据手册

通过下载STE250NS10数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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STE250NS10  
N-CHANNEL 100V - 0.0045 Ω - 220A ISOTOP  
STripFET™ POWER MOSFET  
V
DSS  
R
I
D
TYPE  
DS(on)  
STE250NS10  
100 V  
<0.0055 Ω  
220A  
■
■
■
TYPICAL R (on) = 0.0045Ω  
DS  
STANDARD THRESHOLD DRIVE  
100% AVALANCHE TESTED  
APPLICATIONS  
■
■
■
■
SMPS & UPS  
MOTOR CONTROL  
WELDING EQUIPMENT  
ISOTOP  
OUTPUT STAGE FOR PWM, ULTRASONIC  
CIRCUITS  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
100  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 kΩ)  
100  
V
DGR  
GS  
V
Gate- source Voltage  
± 20  
220  
V
GS  
I
Drain Current (continuos) at T = 25°C  
A
D
C
I
D
Drain Current (continuos) at T = 100°C  
156  
A
C
I (•)  
DM  
Drain Current (pulsed)  
880  
A
P
Total Dissipation at T = 25°C  
500  
W
tot  
C
Derating Factor  
4
W/°C  
V/ns  
V
(1)  
Peak Diode Recovery voltage slope  
Insulation Withstand Voltage (AC-RMS)  
Storage Temperature  
3.5  
dv/dt  
V
2500  
-55 to 150  
150  
ISO  
T
stg  
°C  
°C  
T
Operating Junction Temperature  
j
(•) Pulse width limited by safe operating area.  
(1 )I ≤220A, di/dt ≤200A/µs, V ≤ V  
, T ≤ T  
(BR)DSS j JMAX  
SD  
DD  
.
September 2001  
1/8  
.
STE250NS10  
THERMAL DATA  
Rthj-case  
Rthj-amb  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max  
Max  
0.25  
50  
°C/W  
°C/W  
AVALANCHE CHARACTERISTICS  
Symbol  
Parameter  
Max Value  
Unit  
Avalanche Current, Repetitive or Not-Repetitive  
I
AR  
220  
A
(pulse width limited by T max)  
j
Single Pulse Avalanche Energy  
E
AS  
800  
mJ  
(starting T = 25 °C, I = I , V = 64 V)  
j
D
AR  
DD  
ELECTRICAL CHARACTERISTICS (T  
= 25 °C unless otherwise specified)  
case  
OFF  
Symbol  
Parameter  
Test Conditions  
= 1 mA = 0  
Min.  
Typ.  
Max.  
Unit  
V
I
V
GS  
Drain-source Breakdown  
Voltage  
100  
V
(BR)DSS  
D
V
V
= Max Rating  
= Max Rating T = 125°C  
Zero Gate Voltage  
50  
500  
µA  
µA  
I
DS  
DSS  
Drain Current (V = 0)  
GS  
DS  
C
Gate-body Leakage  
V
GS  
= ± 20V  
±400  
nA  
I
GSS  
Current (V = 0)  
DS  
(*)  
ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
V
GS(th)  
V
V
= V  
I
= 250 µA  
D
Gate Threshold Voltage  
2
3
4
DS  
GS  
GS  
= 10 V  
I
= 125 A  
Static Drain-source On  
Resistance  
0.0045 0.0055  
Ω
D
R
DS(on)  
DYNAMIC  
Symbol  
Parameter  
Test Conditions  
= 20 V = 70 A  
Min.  
Typ.  
Max.  
Unit  
V
V
I
D
g
Forward Transconductance  
60  
S
DS  
DS  
fs  
= 25V, f = 1 MHz, V = 0  
C
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
31  
4.3  
1.2  
nF  
nF  
nF  
iss  
GS  
C
oss  
C
rss  
2/8  
STE250NS10  
ELECTRICAL CHARACTERISTICS (continued)  
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
= 50 V = 125 A  
Min.  
Min.  
Min.  
Typ.  
Max.  
Max.  
Max.  
Unit  
V
R
I
D
Turn-on Delay Time  
Rise Time  
110  
380  
ns  
ns  
t
DD  
d(on)  
= 4.7 Ω  
V
= 10 V  
GS  
t
r
G
(Resistive Load, Figure 3)  
Q
V
= 50V I = 220A V = 10V  
D GS  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
900  
160  
330  
nC  
nC  
nC  
g
DD  
Q
gs  
Q
gd  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
= 50 V = 125 A  
Typ.  
Unit  
V
R
I
D
Turn-off Delay Time  
Fall Time  
1100  
330  
ns  
ns  
t
DD  
d(off)  
= 4.7Ω,  
V
= 10 V  
GS  
t
G
f
(Resistive Load, Figure 3)  
t
V
R
= 80 V  
= 4.7Ω,  
I
= 220 A  
= 10 V  
Off-voltage Rise Time  
Fall Time  
Cross-over Time  
950  
330  
600  
ns  
ns  
ns  
r(Voff)  
clamp  
D
t
V
GS  
f
G
t
c
(Inductive Load, Figure 5)  
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Typ.  
Unit  
I
Source-drain Current  
Source-drain Current (pulsed)  
220  
880  
A
A
SD  
(•)  
I
SDM  
(*)  
I
I
= 220 A  
V
= 0  
GS  
V
Forward On Voltage  
1.5  
V
SD  
SD  
SD  
t
rr  
= 220 A  
= 30 V  
di/dt = 100A/µs  
T = 150°C  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
200  
1.35  
13.5  
ns  
µC  
A
Q
V
rr  
DD  
j
I
(see test circuit, Figure 5)  
RRM  
(*)  
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
•)Pulse width limited by safe operating area.  
Thermal Impedance  
Safe Operating Area  
3/8  
STE250NS10  
Output Characteristics  
Transfer Characteristics  
Transconductance  
Static Drain-source On Resistance  
Gate Charge vs Gate-source Voltage  
Capacitance Variations  
4/8  
STE250NS10  
Normalized Gate Threshold Voltage vs Temperature  
Normalized on Resistance vs Temperature  
Source-drain Diode Forward Characteristics  
Normalized Breakdown Voltage vs Temperature.  
.
.
5/8  
STE250NS10  
Fig. 1: Unclamped Inductive Load Test Circuit  
Fig. 2: Unclamped Inductive Waveform  
Fig. 3: Switching Times Test Circuits For Resistive  
Fig. 4: Gate Charge test Circuit  
Load  
Fig. 5: Test Circuit For Inductive Load Switching  
And Diode Recovery Times  
6/8  
STE250NS10  
ISOTOP MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
11.8  
8.9  
TYP.  
MAX.  
12.2  
9.1  
MIN.  
0.466  
0.350  
0.076  
0.029  
0.496  
0.990  
1.240  
0.157  
0.161  
0.586  
1.185  
1.488  
0.157  
0.307  
MAX.  
0.480  
0.358  
0.080  
0.033  
0.503  
1.003  
1.248  
A
B
C
D
E
F
1.95  
0.75  
12.6  
25.15  
31.5  
4
2.05  
0.85  
12.8  
25.5  
31.7  
G
H
J
4.1  
4.3  
0.169  
0.594  
1.193  
1.503  
K
L
14.9  
30.1  
37.8  
4
15.1  
30.3  
38.2  
M
N
O
7.8  
8.2  
0.322  
A
G
B
O
N
J
C
K
L
M
7/8  
STE250NS10  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is registered trademark of STMicroelectronics  
2001 STMicroelectronics - All Rights Reserved  
All other names are the property of their respective owners.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
8/8  

STE250NS10 替代型号

型号 制造商 描述 替代类型 文档
STE180NE10 STMICROELECTRONICS N-CHANNEL 100V - 4.5 mohm - 180A ISOTOP STripFET] POWER MOSFET 类似代替
IXFN170N10 IXYS HiPerFET Power MOSFET 功能相似
IXFN200N10P IXYS Polar HiPerFET Power MOSFET 功能相似

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