STD2NK60Z [STMICROELECTRONICS]
Zener-Protected SuperMESH MOSFET; 齐纳保护超网MOSFET
| 型号： | STD2NK60Z |
| 厂家： | 
ST |
| 描述： | Zener-Protected SuperMESH MOSFET |
| 文件： | 总16页 (文件大小：529K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STF2NK60Z - STQ2NK60ZR-AP
STP2NK60Z - STD2NK60Z-1
N-CHANNEL 600V - 7.2Ω - 1.4A TO-220/TO-220FP/TO-92/IPAK
Zener-Protected SuperMESH™ MOSFET
Table 1: General Features
Figure 1: Package
TO-92 (Ammopack)
TYPE
V
R
I
D
Pw
DSS
DS(on)
STF2NK60Z
STQ2NK60ZR-AP
STP2NK60Z
STD2NK60Z-1
600 V
600 V
600 V
600 V
< 8 Ω 1.4 A
< 8 Ω 0.4 A
< 8 Ω 1.4 A 45 W
< 8 Ω 1.4 A 45 W
20
3 W
3
2
1
■ TYPICAL R (on) = 7.2 Ω
DS
TO-220
■ EXTREMELY HIGH dv/dt CAPABILITY
■ ESD IMPROVED CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
3
2
1
3
2
1
DESCRIPTION
IPAK
TO-220FP
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ LOW POWER BATTERY CHARGERS
■ SWITH MODE LOW POWER
SUPPLIES(SMPS)
■ LOW POWER, BALLAST, CFL (COMPACT
FLUORESCENT LAMPS)
Table 2: Order Codes
Part Number
STQ2NK60ZR-AP
STP2NK60Z
Marking
Q2NK60ZR
P2NK60Z
D2NK60Z
F2NK60Z
Package
TO-92
Packaging
AMMOPAK
TUBE
TO-220
IPAK
STD2NK60Z-1
STF2NK60Z
TUBE
TO-220FP
TUBE
Rev. 5
September 2005
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STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
TO-92
Unit
TO-220 /
IPAK
TO-220FP
V
Drain-source Voltage (V = 0)
600
600
± 30
0.4
V
V
DS
GS
V
DGR
Drain-gate Voltage (R = 20 kΩ)
GS
V
GS
Gate- source Voltage
V
I
Drain Current (continuous) at T = 25°C
1.4
0.77
5.6
1.4 (*)
0.77 (*)
5.6 (*)
20
A
D
C
I
Drain Current (continuous) at T = 100°C
0.25
1.6
A
D
C
I
( )
Drain Current (pulsed)
A
DM
P
TOT
Total Dissipation at T = 25°C
45
3
W
C
Derating Factor
0.36
0.025
1500
0.16
W/°C
V
V
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Insulation Withstand Voltage (DC)
Peak Diode Recovery voltage slope
ESD(G-S)
V
ISO
2500
V
dv/dt (1)
4.5
V/ns
T
T
stg
Operating Junction Temperature
Storage Temperature
j
-55 to 150
°C
( ) Pulse width limited by safe operating area
(1) I ≤ 1.4A, di/dt ≤ 200A/µs, V ≤ V
, T ≤ T
JMAX.
SD
DD
(BR)DSS
j
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
TO-220/IPAK
TO-220FP
TO-92
--
Unit
°C/W
°C/W
°C/W
°C
Rthj-case
Rthj-amb
Rthj-lead
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
2.77
100
--
6.25
100
--
120
40
T
Maximum Lead Temperature For Soldering
Purpose
300
260
l
Table 5: Avalanche Characteristics
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
1.4
A
AR
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
90
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
Table 6: Gate-Source Zener Diode
Symbol
BV
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Gate source
I
gs
= ± 1 mA (Open Drain)
30
V
GSO
Breakdown Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/16
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 7: On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
Drain-source
I
D
= 1mA, V = 0
600
V
(BR)DSS
GS
Breakdown Voltage
Zero Gate Voltage
I
V
V
= Max Rating
= Max Rating, T = 125 °C
1
50
µA
µA
DSS
DS
Drain Current (V = 0)
GS
DS
C
I
Gate-body Leakage
V
GS
= ± 20V
±10
µA
GSS
Current (V = 0)
DS
V
V
V
= V , I = 50 µA
Gate Threshold Voltage
3
3.75
7.2
4.5
8
V
GS(th)
DS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 0.7 A
Ω
DS(on)
GS
D
Table 8: Dynamic
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
(1)
V
V
= 15 V I = 0.7 A
1
S
Forward Transconductance
fs
DS
, D
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
= 25V, f = 1 MHz, V = 0
170
27
5
pF
pF
pF
iss
DS
GS
oss
rss
C
(3)
V
V
= 0V, V = 0V to 480V
30
Equivalent Output Capacitance
pF
oss eq.
GS
DS
t
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
= 300 V, I = 0.65 A,
8
ns
ns
ns
ns
d(on)
DD
D
30
22
55
t
r
R = 4.7 Ω, V = 10 V
G GS
(Resistive Load see, Figure
22)
t
d(off)
t
r
Q
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
V
= 480V, I = 1.5 A,
= 10V
7.7
1.7
4
10
nC
nC
nC
g
DD
D
Q
gs
gd
GS
Q
(see, Figure 24)
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
1.5
6
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
I
I
= 1.5 A, V = 0
Forward On Voltage
1.6
V
SD
SD
GS
t
= 1.3 A, di/dt = 100 A/µs
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
250
550
4.4
ns
µC
A
rr
SD
Q
V
= 25V, T = 25°C
rr
DD
j
I
(see test circuit, Figure 23)
RRM
t
Q
I
V
= 1.3 A, di/dt = 100 A/µs
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
300
690
4.6
ns
µC
A
rr
SD
= 25V, T = 150°C
rr
DD
j
I
(see test circuit, Figure 23)
RRM
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) C
is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
oss eq.
3/16
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
Figure 3: .Safe Operating Area For TO-220
Figure 4: Safe Operating Area For IPAK
Figure 5: Safe Operating Area For TO-92
Figure 6: Thermal Impedance For TO-220
Figure 7: Thermal Impedance For IPAK
Figure 8: Thermal Impedance For TO-92
4/16
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
Figure 9: Safe Operating Area For TO-220FP
Figure 12: Thermal Impedance For TO-220FP
Figure 10: Output Characteristics
Figure 13: Transfer Characteristics
Figure 11: Transconductance
Figure 14: Gate Charge vs Gate-source Voltage
5/16
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
Figure 15: Static Drain-source On Resistance
Figure 18: Source-Drain Forward Characteris-
tics
Figure 16: Capacitance Variations
Figure 19: Maximum Avalanche Energy vs
Temperature
Figure 17: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 20: Normalized On Resistance vs Tem-
perature
6/16
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
Figure 21: Normalized BV
vs Temperature
DSS
7/16
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
Figure 22: Switching Times Test Circuit For
Resistive Load
Figure 24: Gate Charge Test Circuit
Figure 23: Test Circuit For Inductive Load
Switching and Diode Recovery Times
8/16
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com
9/16
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
TO-220 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
TYP
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
10/16
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
TO-92 AMMOPACK
mm.
TYP
inch
TYP.
DIM.
MIN.
4.45
3.30
MAX.
4.95
3.94
1.6
MIN.
0.170
0.130
MAX.
0.194
0.155
0.06
0.09
0.022
0.51
0.27
0.11
0.08
0.74
0.24
0.36
0.02
0.80
0.65
0.98
0.16
0.035
0.43
A1
T
T1
T2
2.3
d
0.41
12.5
5.65
2.44
-2
0.56
12.9
7.05
2.94
2
0.016
0.49
0.22
0.09
-0.08
0.69
0.22
0.33
P0
12.7
6.35
2.54
0.5
0.25
0.1
P2
F1, F2
delta H
W
17.5
5.7
18
6
19
0.71
0.23
0.35
W0
W1
W2
H
6.3
8.5
9
9.25
0.5
18.5
15.5
20.5
16.5
25
0.72
0.61
H0
H1
D0
t
16
4
0.63
3.8
4.2
0.15
0.157
0.9
L
11
l1
3
0.11
delta P
-1
1
-0.04
0.04
11/16
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
TO-251 (IPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
0068771-E
12/16
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
TO-92 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.32
0.36
4.45
3.30
2.41
1.14
12.70
2.16
0.92
0.41
MAX.
4.95
0.51
4.95
3.94
2.67
1.40
15.49
2.41
1.52
0.56
MIN.
0.170
0.014
0.175
0.130
0.094
0.044
0.50
MAX.
0.194
0.020
0.194
0.155
0.105
0.055
0.610
0.094
0.060
0.022
A
b
D
E
e
e1
L
R
S1
W
V
0.085
0.036
0.016
5°
5°
13/16
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
TO-220FP MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.4
TYP
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1 2
L4
3
L5
L2
14/16
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
Table 10: Revision History
Date
Revision
Description of Changes
07-Jul-2004
3
The document change from “TARGET” to “COMPLETE”
New stylesheet
11/Nov/2004
05-Sep-2005
4
5
Added TO-220FP
Inserted Ecopack indication
15/16
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2005 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
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16/16
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