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STD2NC40-1 [STMICROELECTRONICS]

N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET; N沟道400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET
STD2NC40-1
型号： STD2NC40-1
厂家： ST    ST
描述：

N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET
N沟道400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET

晶体 晶体管 开关 脉冲
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STD2NC40-1  
N-CHANNEL 400V - 4.7Ω - 1.5A IPAK  
PowerMesh II MOSFET  
TYPE  
V
R
DS(on)  
I
D
DSS  
STD2NC40-1  
400V  
<5.5Ω  
1.5A  
■
■
■
■
■
TYPICAL R (on) = 4.7Ω  
DS  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
NEW HIGH VOLTAGE BENCHMARK  
GATE CHARGE MINIMIZED  
3
2
1
DESCRIPTION  
IPAK  
The PowerMESH II is the evolution of the first  
generation of MESH OVERLAY . The layout re-  
finements introduced greatly improve the Ron*area  
figure of merit while keeping the device at the lead-  
ing edge for what concerns swithing speed, gate  
charge and ruggedness.  
(SUFFIX“-1”)  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
■
SWITH MODE LOW POWER SUPPLIES  
(SMPS)  
CFL  
■
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Drain-source Voltage (V = 0)  
Value  
400  
Unit  
V
V
DS  
GS  
V
Drain-gate Voltage (R = 20 kΩ)  
400  
V
DGR  
GS  
V
Gate- source Voltage  
±30  
V
GS  
I
Drain Current (continuos) at T = 25°C  
1.5  
A
D
C
I
Drain Current (continuos) at T = 100°C  
0.95  
6
A
D
C
I
( )  
■
Drain Current (pulsed)  
A
DM  
P
Total Dissipation at T = 25°C  
30  
W
TOT  
C
Derating Factor  
0.24  
3.5  
W/°C  
V/ns  
°C  
°C  
dv/dt  
Peak Diode Recovery voltage slope  
Storage Temperature  
T
stg  
–60 to 150  
150  
T
Max. Operating Junction Temperature  
j
(•)Pulse width limited by safe operating area  
(1)I ≤1.5A, di/dt ≤100A/µs, V ≤ V  
, T ≤ T  
(BR)DSS j JMAX.  
SD  
DD  
May 2000  
1/8  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  
STD2NC40-1  
THERMAL DATA  
Rthj-case  
Rthj-amb  
Rthc-sink  
Thermal Resistance Junction-case Max  
4.16  
100  
1.5  
°C/W  
°C/W  
°C/W  
°C  
Thermal Resistance Junction-ambient Max  
Thermal Resistance Case-sink Typ  
T
l
Maximum Lead Temperature For Soldering Purpose  
275  
AVALANCHE CHARACTERISTICS  
Symbol  
Parameter  
Max Value  
Unit  
Avalanche Current, Repetitive or Not-Repetitive  
I
1.5  
A
AR  
(pulse width limited by T max)  
j
Single Pulse Avalanche Energy  
E
125  
mJ  
AS  
(starting T = 25 °C, I = I , V = 50 V)  
j
D
AR DD  
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)  
OFF  
Symbol  
Parameter  
Drain-source  
Breakdown Voltage  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
I
= 250 µA, V = 0  
400  
V
(BR)DSS  
D
GS  
V
V
= Max Rating  
1
µA  
µA  
DS  
Zero Gate Voltage  
I
DSS  
Drain Current (V = 0)  
GS  
= Max Rating, T = 125 °C  
50  
DS  
GS  
C
Gate-body Leakage  
I
V
= ±30V  
±100  
nA  
GSS  
Current (V = 0)  
DS  
ON (1)  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
3
Max.  
4
Unit  
V
V
V
V
= V , I = 250µA  
Gate Threshold Voltage  
2
GS(th)  
DS  
GS  
GS  
D
= 10V, I = 0.7 A  
4.7  
5.5  
Ω
D
Static Drain-source On  
Resistance  
R
DS(on)  
V
V
> I  
= 10V  
x R  
DS  
GS  
D(on) DS(on)max,  
I
On State Drain Current  
1.5  
A
D(on)  
DYNAMIC  
Symbol  
Parameter  
Test Conditions  
> I x R  
D(on)  
=0.7A  
Min.  
Typ.  
Max.  
Unit  
V
DS  
DS(on)max,  
g
fs  
(1)  
Forward Transconductance  
1.1  
S
I
D
C
Input Capacitance  
Output Capacitance  
108  
pF  
pF  
iss  
C
oss  
22.5  
V
= 25V, f = 1 MHz, V = 0  
GS  
DS  
Reverse Transfer  
Capacitance  
C
rss  
0.4  
pF  
2/8  
STD2NC40-1  
ELECTRICAL CHARACTERISTICS (CONTINUED)  
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
t
V
= 200V, I = 0.7A  
Turn-on Delay Time  
7.5  
ns  
d(on)  
DD  
D
R
= 4.7Ω V  
= 10V  
GS  
G
t
Rise Time  
12  
ns  
r
(see test circuit, Figure 3)  
V
V
= 320V, ID = 1.5A,  
= 10V  
DD  
GS  
Q
Total Gate Charge  
6.1  
8.2  
nC  
g
Q
Q
Gate-Source Charge  
Gate-Drain Charge  
2.1  
2.4  
nC  
nC  
gs  
gd  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
= 320V, I = 1.5A,  
DD  
D
t
Off-voltage Rise Time  
R
= 4.7Ω, V = 10V  
20  
ns  
r(Voff)  
G
GS  
(see test circuit, Figure 5)  
t
Fall Time  
27  
29  
ns  
ns  
f
t
Cross-over Time  
c
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
1.5  
6
Unit  
A
I
Source-drain Current  
SD  
I
(1)  
(2)  
Source-drain Current (pulsed)  
Forward On Voltage  
A
SDM  
V
I
I
= 1.5A, V = 0  
1.5  
V
SD  
SD  
SD  
GS  
= 1.5A, di/dt = 100A/µs,  
= 100V, T = 150°C  
t
Reverse Recovery Time  
V
180  
ns  
rr  
DD  
j
(see test circuit, Figure 5)  
Q
Reverse Recovery Charge  
Reverse Recovery Current  
625  
5
nC  
A
rr  
I
RRM  
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
2. Pulse width limited by safe operating area.  
Safe Operating Area  
Thermal Impedence  
3/8  
STD2NC40-1  
Transfer Characteristics  
Output Characteristics  
Transconductance  
Static Drain-source On Resistance  
Gate Charge vs Gate-source Voltage  
Capacitance Variations  
4/8  
STD2NC40-1  
Normalized Gate Threshold Voltage vs  
Temperature  
Normalized On Resistance vs Temperature  
Source-drain Diode Forward Characteristics  
5/8  
STD2NC40-1  
Fig. 1: Unclamped Inductive Load Test Circuit  
Fig. 2: Unclamped Inductive Waveform  
Fig. 3: Switching Times Test Circuit For  
Fig. 4: Gate Charge test Circuit  
Resistive Load  
Fig. 5: Test Circuit For Inductive Load Switching  
And Diode Recovery Times  
6/8  
STD2NC40-1  
TO-251 (IPAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
2.2  
TYP.  
MAX.  
2.4  
MIN.  
0.086  
0.035  
0.027  
0.025  
0.204  
MAX.  
0.094  
0.043  
0.051  
0.031  
0.212  
0.033  
A
A1  
A3  
B
0.9  
1.1  
0.7  
1.3  
0.64  
5.2  
0.9  
B2  
B3  
B5  
B6  
C
5.4  
0.85  
0.3  
0.012  
0.95  
0.6  
0.6  
6.2  
6.6  
4.6  
16.3  
9.4  
1.2  
1
0.037  
0.023  
0.023  
0.244  
0.260  
0.181  
0.641  
0.370  
0.047  
0.039  
0.45  
0.48  
6
0.017  
0.019  
0.236  
0.252  
0.173  
0.626  
0.354  
0.031  
C2  
D
E
6.4  
4.4  
15.9  
9
G
H
L
L1  
L2  
0.8  
0.8  
0.031  
H
L
D
L2  
L1  
0068771-E  
7/8  
STD2NC40-1  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a trademark of STMicroelectronics  
2000 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
8/8  

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