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STD1HNC60-1 [STMICROELECTRONICS]

N-CHANNEL 600V 4 OHM 2A DPAK/IPAK POWERMESH II MOSFET ; N沟道600V 4 OHM 2A DPAK / IPAK的PowerMESH II MOSFET\n
STD1HNC60-1
型号： STD1HNC60-1
厂家： ST    ST
描述：

N-CHANNEL 600V 4 OHM 2A DPAK/IPAK POWERMESH II MOSFET
N沟道600V 4 OHM 2A DPAK / IPAK的PowerMESH II MOSFET\n

晶体 晶体管 功率场效应晶体管 开关 脉冲
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STD1HNC60  
N-CHANNEL 600V - 4Ω - 2A - IPAK/DPAK  
PowerMesh™II MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STD1HNC60  
600 V  
< 5 Ω  
2 A  
■
■
■
■
■
TYPICAL R (on) = 4 Ω  
DS  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
NEW HIGH VOLTAGE BENCHMARK  
GATE CHARGE MINIMIZED  
3
3
2
1
1
DPAK  
TO-252  
IPAK  
DESCRIPTION  
TO-251  
The PowerMESH™II is the evolution of the first  
generation of MESH OVERLAY™. The layout re-  
finements introduced greatly improve the Ron*area  
figure of merit while keeping the device at the lead-  
ing edge for what concerns swithing speed, gate  
charge and ruggedness.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVER  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
600  
600  
±30  
2
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
GS  
V
Drain-gate Voltage (R = 20 kΩ)  
V
DGR  
GS  
V
GS  
Gate- source Voltage  
V
I
D
Drain Current (continuos) at T = 25°C  
A
C
I
Drain Current (continuos) at T = 100°C  
1.3  
A
D
C
(1)  
Drain Current (pulsed)  
8
A
I
DM  
P
TOT  
Total Dissipation at T = 25°C  
50  
W
C
Derating Factor  
0.4  
3.5  
W/°C  
V/ns  
°C  
dv/dt  
Peak Diode Recovery voltage slope  
Storage Temperature  
T
stg  
–65 to 150  
150  
T
Max. Operating Junction Temperature  
°C  
j
(•)Pulse width limited by safe operating area  
(1)I ≤ 2A, di/dt ≤100A/µs, V ≤ V  
, T ≤ T  
(BR)DSS j JMAX  
SD  
DD  
.
February 2001  
1/9  
STD1HNC60  
THERMAL DATA  
Rthj-case  
Rthj-amb  
Rthj-sink  
Thermal Resistance Junction-case Max  
2.5  
100  
1.5  
°C/W  
°C/W  
°C/W  
°C  
Thermal Resistance Junction-ambient Max  
Thermal Resistance case-sink Typ  
T
Maximum Lead Temperature For Soldering Purpose  
275  
l
AVALANCHE CHARACTERISTICS  
Symbol  
Parameter  
Max Value  
Unit  
I
Avalanche Current, Repetitive or Not-Repetitive  
2
A
AR  
(pulse width limited by T max)  
j
E
Single Pulse Avalanche Energy  
120  
mJ  
AS  
(starting T = 25 °C, I = I , V = 50 V)  
j
D
AR  
DD  
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)  
OFF  
Symbol  
Parameter  
Drain-source  
Breakdown Voltage  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
I
D
= 250 µA, V = 0  
600  
(BR)DSS  
GS  
V
I
Zero Gate Voltage  
V
V
V
= Max Rating  
1
µA  
µA  
nA  
DSS  
DS  
Drain Current (V = 0)  
GS  
= Max Rating, T = 125 °C  
50  
DS  
GS  
C
I
Gate-body Leakage  
= ±30V  
±100  
GSS  
Current (V = 0)  
DS  
ON (1)  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
V
GS(th)  
V
V
= V , I = 250µA  
Gate Threshold Voltage  
2
3
4
4
5
DS  
GS  
D
R
Static Drain-source On  
Resistance  
= 10V, I = 1 A  
D
Ω
DS(on)  
GS  
I
On State Drain Current  
V
V
> I  
= 10V  
x R  
DS(on)max,  
2
A
D(on)  
DS  
D(on)  
GS  
DYNAMIC  
Symbol  
Parameter  
Test Conditions  
x R  
DS(on)max,  
Min.  
Typ.  
Max.  
Unit  
g
fs  
(1)  
Forward Transconductance  
V
DS  
> I  
2
S
D(on)  
I
D
= 1A  
C
C
V = 25V, f = 1 MHz, V = 0  
DS GS  
Input Capacitance  
Output Capacitance  
228  
40  
pF  
pF  
iss  
oss  
Reverse Transfer  
Capacitance  
C
rss  
6
pF  
2/9  
STD1HNC60  
ELECTRICAL CHARACTERISTICS (CONTINUED)  
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
t
V
R
= 300V, I = 1 A  
= 4.7Ω V = 10V  
GS  
9
8.5  
ns  
ns  
Turn-on Delay Time  
Rise Time  
d(on)  
DD  
D
t
r
G
(see test circuit, Figure 3)  
Q
Q
Q
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
V
V
= 480V, I = 2 A,  
= 10V  
15.5  
nC  
nC  
nC  
11.3  
2.8  
5
g
DD  
D
gs  
gd  
GS  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Min.  
Typ.  
Max.  
Unit  
t
V
R
= 480V, I = 2 A,  
Off-voltage Rise Time  
Fall Time  
Cross-over Time  
18  
9
27  
ns  
ns  
ns  
r(Voff)  
DD  
D
t
f
= 4.7Ω, V = 10V  
GS  
(see test circuit, Figure 5)  
G
t
c
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Typ.  
Max.  
2
Unit  
A
I
Source-drain Current  
SD  
I
(2)  
(1)  
Source-drain Current (pulsed)  
Forward On Voltage  
8
A
SDM  
V
I
I
= 2 A, V = 0  
1.6  
V
SD  
SD  
GS  
t
rr  
= 2A, di/dt = 100A/µs, V  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
480  
1032  
4.3  
ns  
nC  
A
SD  
DD  
= 100V, Tj = 150°C  
(see test circuit, Figure 5)  
Q
rr  
I
RRM  
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
2. Pulse width limited by safe operating area.  
Safe Operating Area  
Thermal Impedence  
3/9  
STD1HNC60  
Transfer Characteristics  
Output Characteristics  
Transconductance  
Static Drain-source On Resistance  
Gate Charge vs Gate-source Voltage  
Capacitance Variations  
4/9  
STD1HNC60  
Normalized Gate Threshold Voltage vs  
Temperature  
Normalized On Resistance vs Temperature  
Source-drain Diode Forward Characteristics  
5/9  
STD1HNC60  
Fig. 1: Unclamped Inductive Load Test Circuit  
Fig. 2: Unclamped Inductive Waveform  
Fig. 3: Switching Times Test Circuit For  
Fig. 4: Gate Charge test Circuit  
Resistive Load  
Fig. 5: Test Circuit For Inductive Load Switching  
And Diode Recovery Times  
6/9  
STD1HNC60  
TO-252 (DPAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
2.20  
0.90  
0.03  
0.64  
5.20  
0.45  
0.48  
6.00  
6.40  
4.40  
9.35  
TYP.  
MAX.  
2.40  
1.10  
0.23  
0.90  
5.40  
0.60  
0.60  
6.20  
6.60  
4.60  
10.10  
MIN.  
0.087  
0.035  
0.001  
0.025  
0.204  
0.018  
0.019  
0.236  
0.252  
0.173  
0.368  
MAX.  
0.094  
0.043  
0.009  
0.035  
0.213  
0.024  
0.024  
0.244  
0.260  
0.181  
0.398  
A
A1  
A2  
B
B2  
C
C2  
D
E
G
H
L2  
L4  
V2  
0.8  
0.031  
0.60  
0o  
1.00  
8o  
0.024  
0o  
0.039  
0o  
P032P_B  
7/9  
STD1HNC60  
TO-251 (IPAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
2.2  
TYP.  
MAX.  
2.4  
MIN.  
0.086  
0.035  
0.027  
0.025  
0.204  
MAX.  
0.094  
0.043  
0.051  
0.031  
0.212  
0.033  
A
A1  
A3  
B
0.9  
1.1  
0.7  
1.3  
0.64  
5.2  
0.9  
B2  
B3  
B5  
B6  
C
5.4  
0.85  
0.3  
0.012  
0.95  
0.6  
0.6  
6.2  
6.6  
4.6  
16.3  
9.4  
1.2  
1
0.037  
0.023  
0.023  
0.244  
0.260  
0.181  
0.641  
0.370  
0.047  
0.039  
0.45  
0.48  
6
0.017  
0.019  
0.236  
0.252  
0.173  
0.626  
0.354  
0.031  
C2  
D
E
6.4  
4.4  
15.9  
9
G
H
L
L1  
L2  
0.8  
0.8  
0.031  
H
L
D
L2  
L1  
0068771-E  
8/9  
STD1HNC60  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a trademark of STMicroelectronics  
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
9/9  

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