STD17NF03L-1 [STMICROELECTRONICS]
N-CHANNEL 30V - 0.038 - 17A - DPAK/IPAK STripFETII MOSFET; N沟道30V - 0.038 - 17A - DPAK / IPAK STripFETII MOSFET
| 型号： | STD17NF03L-1 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 30V - 0.038 - 17A - DPAK/IPAK STripFETII MOSFET |
| 文件： | 总11页 (文件大小：301K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD17NF03L
STD17NF03L-1
N-CHANNEL 30V - 0.038Ω - 17A - DPAK/IPAK
STripFET™II MOSFET
Table 1: General Features
Figure 1: Package
TYPE
V
R
I
D
DSS
DS(on)
STD17NF03L
STD17NF03L-1
30 V
30 V
< 0.05 Ω
< 0.05 Ω
17 A
17 A
■ TYPICAL R (on) = 0.038Ω
DS
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOW GATE CHARGE AT 100°C
■ APPLICATION ORIENTED
CHARACTERIZATION
3
3
2
1
1
■ 100% AVALANCHE TESTED
DPAK
IPAK
DESCRIPTION
This MOSFET is the latest development of STMi-
croelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ AUTOMOTIVE ENVIRONMENT
Table 2: Order Codes
SALES TYPE
STD17NF03LT4
STD17NF03L-1
MARKING
D17NF03L@
D17NF03L@
PACKAGE
DPAK
PACKAGING
TAPE & REEL
TUBE
IPAK
Rev. 3
October 2004
1/11
NEW DATASHEET ACCORDING TO PCN DSG-TRA/04/532
STD17NF03L - STD17NF03L-1
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
Unit
V
V
DS
Drain-source Voltage (V = 0)
30
30
GS
V
DGR
Drain-gate Voltage (R = 20 kΩ)
V
GS
V
Gate- source Voltage
±16
17
V
GS
I
Drain Current (continuous) at T = 25°C
A
D
C
I
D
Drain Current (continuous) at T = 100°C
12
A
C
I
( )
Drain Current (pulsed)
68
A
DM
P
TOT
Total Dissipation at T = 25°C
30
W
C
Derating Factor
0.2
W/°C
V/ns
mJ
°C
°C
dv/dt (1)
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
7
E
(2)
200
–55 to 175
175
AS
T
stg
T
Operating Junction Temperature
j
(1) I ≤ 17A, di/dt ≤ 300A/µs, V ≤ V
, T ≤ T
.
JMAX.
SD
DD
(BR)DSS
j
(2) Starting T=25°C, I =8.5A, V =15V
j
D
DD
( ) Pulse width limited by safe operating area
Table 4: Thermal Data
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
5.0
100
275
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
T
l
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 5: Off
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
D
= 250 µA, V = 0
30
V
(BR)DSS
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
V
= Max Rating
1
µA
µA
nA
DSS
DS
Drain Current (V = 0)
GS
= Max Rating, T = 125°C
10
DS
C
I
Gate-body Leakage
= ±16V
±100
GSS
GS
Current (V = 0)
DS
Table 6: On
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
V
DS
= V , I = 250µA
Gate Threshold Voltage
1
1.5
2.2
V
GS
D
R
Static Drain-source On
Resistance
V
V
= 10V, I = 8.5 A
D
0.038
0.045
0.05
0.06
Ω
Ω
DS(on)
GS
= 5 V, I = 8.5 A
GS
D
2/11
STD17NF03L - STD17NF03L-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
Parameter
Test Conditions
x R
DS(on)max,
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
> I
12
S
DS
D(on)
I
D
=8.5A
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, V = 0
320
155
28
pF
pF
pF
iss
DS
GS
C
oss
C
rss
Table 8: Switching On
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
6.5
Unit
t
Turn-on Delay Time
Rise Time
V
= 15V, I = 8.5A
11
100
ns
ns
d(on)
DD
D
t
r
R = 4.7Ω V = 5V
G GS
(see Figure 16)
Q
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
V
= 24V, I = 17A,
4.8
2.25
1.7
nC
nC
nC
DD
D
Q
Q
= 5V
gs
gd
GS
Table 9: Switching Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-off-Delay Time
Fall Time
V
= 15V, I = 8.5A,
25
22
ns
ns
d(off)
DD
D
t
f
R =4.7Ω, V = 5V
G GS
(see Figure 16)
t
Off-voltage Rise Time
Fall Time
Cross-over Time
22
55
75
Vclamp =24V, I =17A
ns
ns
ns
r(off)
D
t
f
R =4.7Ω, V = 5V
G
GS
t
c
(see Figure 17)
Table 10: Source Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
22
Unit
A
I
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
SD
I
(2)
(1)
88
A
SDM
V
I
I
= 17A, V = 0
GS
1.5
V
SD
SD
t
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
28
18
1.3
= 17A, di/dt = 100A/µs,
ns
nC
A
SD
Q
rr
V
= 15V, T = 150°C
DD
j
I
(see test circuit, Figure 5)
RRM
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
3/11
STD17NF03L - STD17NF03L-1
Figure 3: Safe Operating Area
Figure 6: Thermal Impedance
Figure 4: Output Characteristics
Figure 7: Transfer Characteristics
Figure 5: Transconductance
Figure 8: Static Drain-source On Resistance
4/11
STD17NF03L - STD17NF03L-1
Figure 9: Gate Charge vs Gate-source Voltage
Figure 12: Capacitance Variations
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 13: Normalized On Resistance vs Tem-
perature
Figure 11: Source-Drain Diode Forward Char-
acteristics
Figure 14: Normalized Breakdown Voltage vs
Temperature
5/11
STD17NF03L - STD17NF03L-1
Figure 15: Unclamped Inductive Load Test Cir-
cuit
Figure 18: Unclamped Inductive Wafeform
Figure 16: Switching Times Test Circuit For
Resistive Load
Figure 19: Gate Charge Test Circuit
Figure 17: Test Circuit For Inductive Load
Switching and Diode Recovery Times
6/11
STD17NF03L - STD17NF03L-1
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
0.8
0.031
0.60
0o
1.00
8o
0.024
0o
0.039
0o
P032P_B
7/11
STD17NF03L - STD17NF03L-1
TO-251 (IPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
2.2
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
0068771-E
8/11
STD17NF03L - STD17NF03L-1
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
* on sales type
9/11
STD17NF03L - STD17NF03L-1
Table 11: Revision History
Date
Revision
Description of Changes
08-June-2004
19-Oct-2004
2
3
New Stylesheet. Datasheet according to PCN DSG-TRA/04/532
Modified value in title
10/11
STD17NF03L - STD17NF03L-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
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11/11
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