STD13NM60ND [STMICROELECTRONICS]
N-channel 600 V, 0.32 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in DPAK package;
| 型号： | STD13NM60ND |
| 厂家： | 
ST |
| 描述： | N-channel 600 V, 0.32 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in DPAK package 开关 脉冲 晶体管 |
| 文件： | 总21页 (文件大小：1542K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD13NM60ND, STF13NM60ND,
STP13NM60ND
N-channel 600 V, 0.32 Ω typ., 11 A, FDmesh™ II Power MOSFET
(with fast diode) in DPAK, TO-220FP and TO-220 packages
Datasheet
−
production data
Features
TAB
Order codes
VDS @ TJmax RDS(on) max
ID
3
1
3
STD13NM60ND
STF13NM60ND
STP13NM60ND
2
1
DPAK
650 V
0.38 Ω
11 A
TO-220FP
TAB
•
The worldwide best RDS(on)* area among fast
recovery diode devices
3
2
•
•
•
•
100% avalanche tested
1
TO-220
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche
capabilities
Figure 1. Internal schematic diagram
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Applications
•
Switching applications
Description
*ꢅꢁꢈ
These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
6ꢅꢉꢈ
$0ꢀꢁꢂꢃꢄYꢁ
Table 1. Device summary
Order codes
Marking
Package
Packaging
STD13NM60ND
STF13NM60ND
STP13NM60ND
DPAK
TO-220FP
TO-220
Tape and reel
13NM60ND
Tube
May 2013
DocID024645 Rev 1
1/21
This is information on a product in full production.
www.st.com
21
Contents
STD13NM60ND, STF13NM60ND, STP13NM60ND
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21
DocID024645 Rev 1
STD13NM60ND, STF13NM60ND, STP13NM60ND
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Value
DPAK, TO-220
Symbol
Parameter
Unit
TO-220FP
VDS
VGS
ID
Drain-source voltage
600
V
V
Gate-source voltage
± 25
11
6.93
44
11 (1)
6.93(1)
44 (1)
25
A
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
ID
A
A
(2)
IDM
Drain current (pulsed)
Total dissipation at TC = 25°C
PTOT
109
W
dv/dt (3) Peak diode recovery voltage slope
dv/dt (4) MOSFET dv/dt ruggedness
40
40
V/ns
V/ns
Insulation withstand voltage (RMS) from all
VISO
three leads to external heat sink
(t=1s;TC=25°C)
2500
V
Tstg
Tj
Storage temperature
-55 to 150
150
°C
°C
Max. operating junction temperature
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area
3.
4.
I
≤ 11 A, di/dt ≤ 400 A/μs, V = 80% V
, V
≤ V
SD
DD
(BR)DSS
DS(peak) (BR)DSS
V
≤ 480 V
DS
Table 3. Thermal data
Parameter
Value
Symbol
Unit
DPAK TO-220FP TO-220
Rthj-case Thermal resistance junction-case max
1.15
50
5
1.15
°C/W
°C/W
°C/W
Rthj-amb Thermal resistance junction-amb max
62.5
(1)
Rthj-pcb
Thermal resistance junction-pcb max
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4. Avalanche characteristics
Parameter
Symbol
IAS
Max value
Unit
A
Avalanche current, repetitive or not-
3
repetitive(1)
Single pulse avalanche energy (2)
EAS
162
mJ
1. Pulse width limited by Tj max
2. starting Tj= 25 °C, I =I , V = 50 V
D
AS
DD
DocID024645 Rev 1
3/21
Electrical characteristics
STD13NM60ND, STF13NM60ND, STP13NM60ND
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. On/off states
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V(BR)DSS
ID = 1 mA, VGS= 0
600
V
VDS = 600 V
VDS = 600 V, TC=125 °C
1
100
μA
μA
Zero gate voltage drain
current (VGS = 0)
IDSS
Gate body leakage current
(VDS = 0)
IGSS
VGS = ±20 V
±100
5
nA
V
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250 μA
VGS= 10 V, ID= 5.5 A
3
4
Static drain-source on
resistance
RDS(on)
0.32
0.38
Ω
Table 6. Dynamic
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
Ciss
Input capacitance
-
-
845
47
-
-
pF
pF
VDS = 50 V, f =1 MHz,
VGS = 0
Coss
Output capacitance
Reverse transfer
capacitance
Crss
-
-
2.5
-
-
pF
pF
Equivalent output
capacitance
(1)
Coss eq.
VGS = 0, VDS = 0V to 480 V
121
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
Rg
Gate input resistance
-
4.3
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
-
-
-
24.5
4.8
17
-
nC
nC
nC
VDD = 480 V, ID = 11 A
VGS = 10 V
(see Figure 18)
-
-
1.
C
is defined as a constant equivalent capacitance giving the same charging time as C
when V
DS
oss eq.
oss
increases from 0 to 80% V
DSS
4/21
DocID024645 Rev 1
STD13NM60ND, STF13NM60ND, STP13NM60ND
Electrical characteristics
Min Typ Max Unit
Table 7. Switching times
Symbol
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
-
-
-
-
46.5
10
-
-
-
-
ns
ns
ns
ns
VDD = 300 V, ID = 5.5 A,
RG = 4.7 Ω, VGS = 10 V
Turn-off delay time
Fall time
9.6
(see Figure 17)
15.4
Table 8. Source drain diode
Test conditions
Symbol
Parameter
Min Typ Max Unit
ISD
Source-drain current
-
-
-
-
-
-
-
-
-
11
44
A
A
(1)
ISDM
Source-drain current (pulsed)
Forward on voltage
(2)
VSD
ISD = 11 A, VGS=0
1.6
V
trr
Qrr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
150
755
12
ns
nC
A
ISD =11 A, di/dt =100 A/μs,
VDD = 100 V
(see Figure 19)
IRRM
trr
187
1271
13.6
ns
nC
A
VDD = 100 V
di/dt =100 A/μs, ISD = 11 A
Tj = 150 °C (see Figure 19)
Qrr
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300μs, duty cycle 1.5%
DocID024645 Rev 1
5/21
Electrical characteristics
STD13NM60ND, STF13NM60ND, STP13NM60ND
Figure 3. Thermal impedance for DPAK
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area for DPAK
AM15772v1
I
D
(A)
10µs
10
100µs
1
1ms
Tj=150°C
Tc=25°C
10ms
Single
pulse
0.1
10
VDS(V)
0.1
1
100
Figure 4. Safe operating area for TO-220FP
Figure 5. Thermal impedance for TO-220FP
AM15773v1
I
D
(A)
10
10µs
100µs
1
1ms
Tj=150°C
Tc=25°C
10ms
0.1
Single
pulse
0.01
10
VDS(V)
0.1
1
100
Figure 6. Safe operating area for TO-220
Figure 7. Thermal impedance for TO-220
AM15774v1
I
D
(A)
10
10µs
100µs
1ms
01
Tj=150°C
Tc=25°C
10ms
Single
pulse
0.1
10
VDS(V)
0.1
1
100
6/21
DocID024645 Rev 1
STD13NM60ND, STF13NM60ND, STP13NM60ND
Electrical characteristics
Figure 8. Output characteristics
Figure 9. Transfer characteristics
AM15775v1
AM15776v1
I
D
(A)
D (A)
24
I
V
GS=7, 8, 9, 10V
VDS=20V
-
22
20
18
16
14
12
10
8
22
20
18
6V
16
14
12
10
8
5V
4V
6
4
6
4
2
2
0
0
0
15
2
5
10
10
20
VDS(V)
8
VGS(V)
0
25
4
6
Figure 10. Gate charge vs gate-source voltage
Figure 11. Static drain-source on-resistance
AM15779v1
AM15778v1
V
GS
R
DS(on)
(Ω)
V
DS
(V)
(V)
V
DD=480V
0.340
0.335
0.330
0.325
V
GS=10V
V
DS
500
10
ID=11A
400
300
200
8
6
0.320
4
2
0
0.315
0.310
0.305
100
0
4
8
Qg
(nC)
8
10
ID(A)
0
12 16
20 22
0
4
2
6
Figure 12. Capacitance variations
Figure 13. Normalized gate threshold voltage
vs. temperature
AM15780v1
AM15777v1
C
V
GS(th)
(norm)
(pF)
ID=250 µA
1.10
1.05
1000
Ciss
1.00
0.95
0.90
100
Coss
Crss
0.85
0.80
10
1
0.75
0.70
0.1
100
-25
0
25 50
1
10
V
DS(V)
-50
75
125 TJ(°C)
100
DocID024645 Rev 1
7/21
Electrical characteristics
STD13NM60ND, STF13NM60ND, STP13NM60ND
Figure 14. Normalized on-resistance vs
temperature
Figure 15. Source-drain diode forward
characteristics
AM15782v1
AM15783v1
R
DS(on)
(norm)
SD (V)
V
TJ=-50°C
ID=11 A
2.1
1.2
1.9
1.7
TJ=25°C
1
1.5
1.3
1.1
0.9
0.7
0.5
0.8
TJ=150°C
0.6
0.4
0
25
125
T
J
(°C)
0
2
4
6
8
ISD(A)
-50
-25
50
100
10
75
Figure 16. Normalized VDS vs temperature
AM15781v1
V
DS
(norm)
ID=1mA
1.08
1.06
1.04
1.02
1
0.98
0.96
0.94
0.92
-50 -25
0
25 50
75
125 TJ(°C)
100
8/21
DocID024645 Rev 1
STD13NM60ND, STF13NM60ND, STP13NM60ND
Test circuits
3
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
VDD
12V
47kΩ
100nF
1kΩ
2200
3.3
μF
RL
μF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VD
RG
VGS
2200
μF
D.U.T.
VG
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 19. Test circuit for inductive load
switching and diode recovery times
Figure 20. Unclamped inductive load test circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100μH
VD
G
2200
μF
D.U.T.
B
3.3
VDD
μF
3.3
μF
1000
μF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 21. Unclamped inductive waveform
Figure 22. Switching time waveform
ton
toff
tdoff
V(BR)DSS
tr
tf
tdon
VD
90%
10%
90%
IDM
10%
VGS
VDS
ID
0
0
VDD
VDD
90%
10%
AM01472v1
AM01473v1
DocID024645 Rev 1
9/21
Package mechanical data
STD13NM60ND, STF13NM60ND, STP13NM60ND
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/21
DocID024645 Rev 1
STD13NM60ND, STF13NM60ND, STP13NM60ND
Package mechanical data
Table 9. DPAK (TO-252) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
A2
b
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
b4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.28
e1
H
4.40
9.35
1.00
4.60
10.10
1.50
L
(L1)
L2
L4
R
2.80
0.80
0.60
0°
1.00
8°
0.20
V2
DocID024645 Rev 1
11/21
Package mechanical data
STD13NM60ND, STF13NM60ND, STP13NM60ND
Figure 23. DPAK (TO-252) drawing
0068772_K
12/21
DocID024645 Rev 1
STD13NM60ND, STF13NM60ND, STP13NM60ND
Figure 24. DPAK footprint (a)
Package mechanical data
Footprint_REV_K
a. All dimensions are in millimeters
DocID024645 Rev 1
13/21
Package mechanical data
STD13NM60ND, STF13NM60ND, STP13NM60ND
Table 10. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
14/21
DocID024645 Rev 1
STD13NM60ND, STF13NM60ND, STP13NM60ND
Package mechanical data
Figure 25. TO-220FP drawing
7012510_Rev_K_B
DocID024645 Rev 1
15/21
Package mechanical data
STD13NM60ND, STF13NM60ND, STP13NM60ND
Table 11. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
3.50
3.93
16.40
28.90
∅
Q
P
3.75
2.65
3.85
2.95
16/21
DocID024645 Rev 1
STD13NM60ND, STF13NM60ND, STP13NM60ND
Package mechanical data
Figure 26. TO-220 type A drawing
0015988_typeA_Rev_S
DocID024645 Rev 1
17/21
Packaging mechanical data
STD13NM60ND, STF13NM60ND, STP13NM60ND
5
Packaging mechanical data
Table 12. DPAK (TO-252) tape and reel mechanical data
Tape Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
B1
D
6.8
7
A
B
C
D
G
N
T
330
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qty.
Bulk qty.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
18/21
DocID024645 Rev 1
STD13NM60ND, STF13NM60ND, STP13NM60ND
Packaging mechanical data
Figure 27. Tape for DPAK (TO-252)
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
D
Top cover
tape
P2
T
E
F
W
K0
B1
B0
For machine ref. only
including draft and
A0
D1
P1
radii concentric around B0
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
Figure 28. Reel for DPAK (TO-252)
T
REEL DIMENSIONS
40mm min.
Access hole
At slot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
DocID024645 Rev 1
19/21
Revision history
STD13NM60ND, STF13NM60ND, STP13NM60ND
6
Revision history
Table 13. Document revision history
Date
Revision
Changes
15-May-2013
1
First release.
20/21
DocID024645 Rev 1
STD13NM60ND, STF13NM60ND, STP13NM60ND
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21/21
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