STB13NM50N [STMICROELECTRONICS]

N-channel 500V - 0.250ヘ - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh⑩ Power MOSFET; N沟道500V - 0.250ヘ - 12A - TO- 220 / FP - TO- 247 - I2 / D2PAK第二代MDmesh⑩功率MOSFET
STB13NM50N
型号: STB13NM50N
厂家: ST    ST
描述:

N-channel 500V - 0.250ヘ - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh⑩ Power MOSFET
N沟道500V - 0.250ヘ - 12A - TO- 220 / FP - TO- 247 - I2 / D2PAK第二代MDmesh⑩功率MOSFET

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STB13NM50N/-1 - STF13NM50N  
STP13NM50N - STW13NM50N  
N-channel 500V - 0.250- 12A - TO-220/FP - TO-247-I2/D2PAK  
Second generation MDmesh™ Power MOSFET  
Features  
VDSS  
(@Tjmax)  
Type  
RDS(on)  
ID  
3
3
2
2
1
1
STB13NM50N  
STB13NM50N-1  
STF13NM50N  
STP13NM50N  
STW13NM50N  
550V  
550V  
550V  
550V  
550V  
<0.32Ω  
<0.32Ω  
<0.32Ω  
<0.32Ω  
<0.32Ω  
12A  
12A  
12A(1)  
TO-220  
PAK  
12A  
TO-247  
12A  
3
3
2
1
1
1. Limited only by maximum temperature allowed  
TO-220FP  
PAK  
100% avalanche tested  
Low input capacitance and gate charge  
Low gate input resistance  
Internal schematic diagram  
Description  
This product is realized with the second  
generation of MDmesh™ technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the company’s strip layout to  
yield one of the world’s lowest on-resistance and  
gate charge. It is therefore suitable for the most  
demanding high efficiency converters  
Application  
Switching application  
Order codes  
Part number  
Marking  
Package  
Packaging  
STB13NM50N-1  
STB13NM50N  
STP13NM50N  
STF13NM50N  
STW13NM50N  
B13NM50N  
B13NM50N  
P13NM50N  
F13NM50N  
W13NM50N  
PAK  
PAK  
Tube  
Tape & reel  
Tube  
TO-220  
TO-220FP  
TO-247  
Tube  
Tube  
May 2007  
Rev 2  
1/17  
www.st.com  
17  
Contents  
STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N  
Contents  
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2.1  
Electrical characteristics (curves)  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
3
4
5
6
Test circuit  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
2/17  
STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N  
Electrical ratings  
1
Electrical ratings  
Table 1.  
Absolute maximum ratings  
Value  
Symbol  
Parameter  
Unit  
TO-220/TO-247  
D²PAK/I²PAK  
TO-220FP  
VDS  
VGS  
ID  
Drain-source voltage (VGS=0)  
500  
25  
V
V
Gate-source voltage  
12 (1)  
6 (1)  
48 (1)  
Drain current (continuous) at TC = 25°C  
Drain current (continuous) at TC = 100°C  
12  
6
A
A
ID  
(2)  
Drain current (pulsed)  
48  
100  
A
IDM  
PTOT  
Total dissipation at TC = 25°C  
Peak diode recovery voltage slope  
25  
W
dv/dt (3)  
15  
V/ns  
Insulation withstand voltage (RMS) from  
all three leads to external heat sink  
(t=1s;TC=25°C)  
VISO  
--  
2500  
V
Tj  
Operating junction temperature  
Storage temperature  
-55 to 150  
°C  
Tstg  
1. Limited only by maximum temperature allowed  
2. Pulse width limited by safe operating area  
3. ISD 12A, di/dt 400A/µs, VDD =80% V(BR)DSS  
Table 2.  
Thermal data  
Value  
Symbol  
Parameter  
Unit  
TO-220/TO-247  
D²PAK/I²PAK  
TO-220FP  
Rthj-case Thermal resistance junction-case max  
Rthj-amb Thermal resistance junction-amb max  
1.25  
5
°C/W  
°C/W  
62.5  
Maximum lead temperature for soldering  
Tl  
300  
°C  
purpose  
Table 3.  
Symbol  
Avalanche characteristics  
Parameter  
Max value  
Unit  
Avalanche current, repetitive or not-  
repetitive (pulse width limited by Tj max)  
IAS  
3.5  
A
Single pulse avalanche energy  
EAS  
200  
mJ  
(starting Tj=25°C, ID=IAS, VDD= 50V)  
3/17  
Electrical characteristics  
STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N  
2
Electrical characteristics  
(T  
=25°C unless otherwise specified)  
CASE  
Table 4.  
On/off states  
Parameter  
Symbol  
Test conditions  
ID = 1mA, VGS= 0  
Min. Typ. Max. Unit  
Drain-source breakdown  
voltage  
V(BR)DSS  
500  
V
Vdd=400V,Id=12A,  
Vgs=10V  
dv/dt(1)  
Drain-source voltage slope  
30  
V/ns  
V
DS = Max rating,  
1
µA  
µA  
Zero gate voltage drain  
current (VGS = 0)  
IDSS  
VDS = Max rating,Tc=125°C  
100  
Gate body leakage current  
(VDS = 0)  
IGSS  
VGS = 20V  
100  
4
nA  
VGS(th)  
RDS(on)  
VDS= VGS, ID = 250µA  
VGS= 10V, ID= 6A  
Gate threshold voltage  
2
3
V
Static drain-source on  
resistance  
0.25 0.32  
1. Characteristics value at turn off on inductive load  
Table 5.  
Dynamic  
Parameter  
Symbol  
Test conditions  
VDS =15V, ID= 6A  
Min. Typ. Max. Unit  
(1)  
Forward transconductance  
8
S
gfs  
Input capacitance  
Ciss  
Coss  
Crss  
960  
50  
5
pF  
pF  
pF  
Output capacitance  
VDS =50V, f=1MHz, VGS=0  
Reverse transfer  
capacitance  
Equivalent output  
capacitance  
(2)  
VGS=0, VDS =0V to 480V  
110  
5
pF  
Coss eq.  
f=1MHz Gate DC Bias=0  
test signal level=20mV  
open drain  
Rg  
Gate input resistance  
Qg  
Qgs  
Qgd  
VDD=400V, ID = 12A  
Total gate charge  
Gate-source charge  
Gate-drain charge  
30  
5
nC  
nC  
nC  
VGS =10V  
15  
(see Figure 18)  
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%  
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS  
increases from 0 to 80% VDSS  
4/17  
STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N  
Electrical characteristics  
Table 6.  
Switching times  
Symbol  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
td(on)  
tr  
td(off)  
tf  
Turn-on delay time  
Rise time  
30  
15  
40  
10  
ns  
ns  
ns  
ns  
VDD=250V, ID=6A,  
RG=4.7, VGS=10V  
(see Figure 17)  
Turn-off delay time  
Fall time  
Table 7.  
Source drain diode  
Symbol  
Parameter  
Test conditions  
Min Typ. Max Unit  
ISD  
Source-drain current  
12  
48  
A
A
(1)  
Source-drain current (pulsed)  
ISDM  
(2)  
ISD=12A, VGS=0  
Forward on voltage  
1.3  
V
VSD  
trr  
ISD=12A, VDD=100V  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
300  
3
ns  
µC  
A
Qrr  
di/dt = 100A/µs,Tj=25°C  
22  
IRRM  
(see Figure 19)  
trr  
ISD=12A,VDD=100V  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
370  
4
ns  
µC  
A
Qrr  
di/dt=100A/µs,Tj=150°C  
22  
IRRM  
(see Figure 19)  
1. Pulse width limited by safe operating area  
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%  
5/17  
Electrical characteristics  
STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N  
2.1  
Electrical characteristics (curves)  
Figure 1. Safe operating area for TO-220 /  
PAK / I²PAK  
Figure 2. Thermal impedance for TO-220 /  
PAK / I²PAK  
Figure 3. Safe operating area for TO-220FP  
Figure 4. Thermal impedance for TO-220FP  
Figure 5.  
Safe operating area for TO-247  
Figure 6.  
Thermal impedance for TO-247  
6/17  
STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N  
Electrical characteristics  
Figure 7. Output characteristics  
Figure 8. Transfer characteristics  
Figure 9. Transconductance  
Figure 10. Static drain-source on resistance  
Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations  
7/17  
Electrical characteristics  
STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N  
Figure 13. Normalized gate threshold voltage Figure 14. Normalized on resistance vs  
vs temperature  
temperature  
Figure 15. Source-drain diode forward  
characteristics  
Figure 16. Normalized BVdss vs temperature  
8/17  
STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N  
Test circuit  
3
Test circuit  
Figure 17. Switching times test circuit for  
resistive load  
Figure 18. Gate charge test circuit  
Figure 19. Test circuit for inductive load  
switching and diode recovery times  
Figure 20. Unclamped inductive load test  
circuit  
Figure 21. Unclamped inductive waveform  
Figure 22. Switching time waveform  
9/17  
Package mechanical data  
STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a Lead-free second level interconnect. The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECOPACK is an ST trademark.  
ECOPACK specifications are available at: www.st.com  
10/17  
STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N  
Package mechanical data  
TO-220 mechanical data  
mm  
inch  
Dim  
Min  
Typ  
Max  
Min  
Typ  
Max  
A
b
4.40  
0.61  
1.14  
0.49  
15.25  
4.60  
0.88  
1.70  
0.70  
15.75  
0.173  
0.024  
0.044  
0.019  
0.6  
0.181  
0.034  
0.066  
0.027  
0.62  
b1  
c
D
D1  
E
1.27  
0.050  
10  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
0.393  
0.094  
0.194  
0.048  
0.244  
0.094  
0.511  
0.137  
0.409  
0.106  
0.202  
0.051  
0.256  
0.107  
0.551  
0.154  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
P  
Q
3.50  
3.93  
16.40  
0.645  
28.90  
1.137  
3.75  
3.85  
2.95  
0.147  
0.104  
0.151  
0.116  
2.65  
11/17  
Package mechanical data  
STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N  
TO-220FP MECHANICAL DATA  
mm.  
TYP  
inch  
TYP.  
DIM.  
MIN.  
4.4  
MAX.  
4.6  
2.7  
2.75  
0.7  
1
MIN.  
0.173  
0.098  
0.098  
0.017  
0.030  
0.045  
0.045  
0.195  
0.094  
0.393  
MAX.  
0.181  
0.106  
0.108  
0.027  
0.039  
0.067  
0.067  
0.204  
0.106  
0.409  
A
B
2.5  
D
2.5  
E
0.45  
0.75  
1.15  
1.15  
4.95  
2.4  
F
F1  
F2  
G
1.7  
1.7  
5.2  
2.7  
10.4  
G1  
H
10  
L2  
L3  
L4  
L5  
L6  
L7  
Ø
16  
0.630  
28.6  
9.8  
2.9  
15.9  
9
30.6  
10.6  
3.6  
1.126  
.0385  
0.114  
0.626  
0.354  
0.118  
1.204  
0.417  
0.141  
0.645  
0.366  
0.126  
16.4  
9.3  
3
3.2  
L3  
L6  
L7  
1
2 3  
L5  
L2  
L4  
12/17  
STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N  
Package mechanical data  
TO-262 (I2PAK) MECHANICAL DATA  
mm.  
TYP  
inch  
DIM.  
MIN.  
4.40  
2.40  
0.61  
1.14  
0.49  
1.23  
8.95  
2.40  
4.95  
10  
MAX.  
4.60  
2.72  
0.88  
1.70  
0.70  
1.32  
9.35  
2.70  
5.15  
10.40  
14  
MIN.  
0.173  
0.094  
0.024  
0.044  
0.019  
0.048  
0.352  
0.094  
0.194  
0.393  
0.511  
0.137  
0.050  
TYP.  
MAX.  
0.181  
0.107  
0.034  
0.066  
0.027  
0.052  
0.368  
0.106  
0.202  
0.410  
0.551  
0.154  
0.055  
A
A1  
b
b1  
c
c2  
D
e
e1  
E
L
13  
L1  
L2  
3.50  
1.27  
3.93  
1.40  
13/17  
Package mechanical data  
STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N  
D2PAK MECHANICAL DATA  
mm.  
TYP  
inch  
TYP.  
DIM.  
MIN.  
4.4  
MAX.  
4.6  
MIN.  
0.173  
0.098  
0.001  
0.027  
0.044  
0.017  
0.048  
0.352  
MAX.  
0.181  
0.106  
0.009  
0.036  
0.067  
0.023  
0.053  
0.368  
A
A1  
A2  
B
2.49  
0.03  
0.7  
2.69  
0.23  
0.93  
1.7  
B2  
C
1.14  
0.45  
1.23  
8.95  
0.6  
C2  
D
1.36  
9.35  
D1  
E
8
0.315  
0.334  
10  
10.4  
0.393  
E1  
G
8.5  
4.88  
15  
5.28  
15.85  
1.4  
0.192  
0.590  
0.050  
0.055  
0.094  
0.208  
0.625  
0.055  
0.068  
0.126  
L
L2  
L3  
M
1.27  
1.4  
1.75  
3.2  
2.4  
R
0.4  
0.015  
V2  
0º  
4º  
3
1
14/17  
STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N  
Packaging mechanical data  
5
Packaging mechanical data  
2
D PAK FOOTPRINT  
TAPE AND REEL SHIPMENT  
REEL MECHANICAL DATA  
mm  
MIN. MAX. MIN. MAX.  
330 12.992  
inch  
DIM.  
A
B
C
D
G
N
T
1.5  
12.8  
20.2  
24.4  
100  
0.059  
13.2 0.504 0.520  
0795  
26.4 0.960 1.039  
3.937  
30.4  
1.197  
BASE QTY  
BULK QTY  
1000  
TAPE MECHANICAL DATA  
1000  
mm  
inch  
DIM.  
MIN. MAX. MIN. MAX.  
10.5 10.7 0.413 0.421  
15.7 15.9 0.618 0.626  
A0  
B0  
D
1.5  
1.6 0.059 0.063  
D1  
E
1.59 1.61 0.062 0.063  
1.65 1.85 0.065 0.073  
F
11.4  
4.8  
3.9  
11.9  
1.9  
50  
11.6 0.449 0.456  
5.0 0.189 0.197  
4.1 0.153 0.161  
12.1 0.468 0.476  
2.1 0.075 0.082  
1.574  
K0  
P0  
P1  
P2  
R
T
0.25 0.35 0.0098 0.0137  
23.7 24.3 0.933 0.956  
W
* on sales type  
15/17  
Revision history  
STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N  
6
Revision history  
Table 8.  
Date  
Revision history  
Revision  
Changes  
18-Dec-2006  
08-May-2007  
1
2
First release  
Added TO-247  
16/17  
STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N  
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17/17  

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N-CHANNEL 75V - 0.0065 ohm -120A DPAK/IPAK/TO-220 STripFET⑩ II POWER MOSFET
STMICROELECTR

STB140NF75-1

N-CHANNEL 75V - 0.0065 ohm -120A DPAK/IPAK/TO-220 STripFET⑩ II POWER MOSFET
STMICROELECTR

STB140NF75T4

N-channel 75V - 0.0065 - 120A - D2PAK/I2/TO-220 STripFET III Power MOSFET
STMICROELECTR

STB141NF55

N-channel 55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO-220 STripFET™ II Power MOSFET
STMICROELECTR

STB141NF55-1

N-channel 55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO-220 STripFET™ II Power MOSFET
STMICROELECTR