START499TR [STMICROELECTRONICS]
NPN Silicon RF Transistor; NPN硅晶体管RF
| 型号： | START499TR |
| 厂家： | 
ST |
| 描述： | NPN Silicon RF Transistor |
| 文件： | 总7页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
START499
NPN Silicon RF Transistor
• HIGH EFFICIENCY
• HIGH GAIN
• LINEAR AND NON LINEAR OPERATION
• TRANSITION FREQUENCY 42GHz
• ULTRA MINIATURE SOT343 (SC70) PACKAGE
SOT343 (SC70)
ORDER CODE
BRANDING
START499TR
499
DESCRIPTION
START499 is a product of the START family that
provide the market with a Si state-of-art RF process.
Manufactured in St 3rd generation bipolar process, it
offers the highest power, gain and efficiency in
SOT343 for given breakdown voltage (BVceo).
Suitable for a wide range of applications up to 5GHz,
it shows a performance level achieved before with
GaAs products only.
APPLICATIONS
• PA FOR DECT OR PHS
• PA STAGE FOR WIRELESS LAN AND
BLUETOOTH @ 2.5GHz
• UHF-VHF PRE POWER AMPLIFIER
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
4.5
Unit
V
Collector emitter voltage
Collector base voltage
Emitter base voltage
Collector current
V
V
ceo
V
15
cbo
V
ebo
1.5
V
I
600
32
mA
mA
mW
c
I
Base current
b
o
P
600
-65 to 150
150
tot
Total dissipation at T = 60 C
S
o
T
stg
Storage temperature
C
o
T
Max. operating junction temperature
j
C
ABSOLUTE MAXIMUM RATINGS
o
R
thjs
Thermal Resistance Junction soldering point
150
C/W
July, 3 2002
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START499
o
ELECTRICAL CHARACTERISTICS (T =25 C,unless otherwise specified)
j
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
Collector cutoff current
Vcb = 5V, Ie = 0A
1.2
µA
cbo
Emitter-base cutoff
current
I
Veb = 1.5V, Ic = 0A
120
µA
ebo
Hfe
G
DC current gain
Power gain
Ic = 160mA, Vce = 4V
160
15
Ic =200mA, Vce = 3V, f = 1.8GHz
Ic = 200mA,Vce = 3V, f = 1.8GHz
dB
P
-1dB
1dB compression point
23.5
dBm
Ouput third order
intercept point
IP3
NF
Ic = 200mA,Vce = 3V, f = 1.8GHz
Ic = 200mA,Vce = 3V, f = 1.8GHz
33.5
3.3
dBm
dB
Noise Figure
QUICK REFERENCE DATA
MODE OF OPERATION
Class-AB (Icq = 5mA)
V
(V)
P
G
(dB)
f
η
(%)
CE
L
P
(GHz)
(dBm)
1.9
3.6
26
≥12
typ. 68
PIN CONNECTION
PINOUT
Pin No.
Description
BASE
4
1
3
2
1
3
Top view
COLLECTOR
EMITTER
2,4
SOT343
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START499
SPICE PARAMETERS (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax)
TRANSISTOR CHIP DATA
Symbol
TMEAS
IS
Value
27.0
Symbol
FC
Value
0.81
1.12
1
Symbol
XJBC
XTI
Value
0.51
3.68
332
70
3.27E-16
13.08E-12
1
EG
ISE
NF
BF
NR
NE
3.2
VAF
ISC
7.89E-15
BR
9.75
VAR
2.1
o
{3.948*((T( C)+273.15)/
IKF
NC
1.5
TF
3.4E-12
300.15)^(-1.7)}
TR
XTF
RB
7E-10
PTF
ITF
38
VTF
MJE
MJC
MJS
IKR
29.7
0.341
0.312
0.297
57.3E-3
-0.82
16.3
5.01
2.58
RBM
RE
0.83
RC
0.597
0.066
1.09
CJE
CJC
CJS
3048E-15
930E-15
510E-15
VJE
VJC
VJS
0.695
0.507
XTB
PACKAGE EQUIVALENT CIRCUIT
C2
C=30 fF
L4
B’
C’
L3
L5
L6
L=0.5 nH
.
B
.
.
.
C
L=0.5 nH
L=0.1 nH
L=0.1 nH
E’
L=0.15 nH
L1
C1
C3
.
C=640 fF
C=780 fF
L2 L=0.05 nH
.
E
In order to avoid high complexity of the package equivalent circuit, the two emitter leads of SOT-343
package are combined in one electrical connection.
FOR MORE ACCURACY SIMULATION IN SATURATION REGION :
Adding the 5 Spice parameters showed in Table A and using ST Spice Library (available on request) you
can achieve a more accuracy simulation in the saturation region. ST Spice library is compatible with
following simulators: ELDO MENTOR (any version), SPECTRE CADENCE (any version), ADS (version
2001 only).
Table A (Spice Parameters extracted in saturation region)
RW
Vjj
ENP
VRP
RP
1.034
0.755
2.235
{7.2*((TEMPER+273.15)/300.15)^(0.125)}
0.33E-6
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START499
COMMON EMITTER S-PARAMETERS ( V = 2V, I = 200mA )
CE
C
Φ
Φ
IS11I
Φ
IS21I
IS12I
S12
IS22I
S22
S11
FREQ
(MHz)
0.1
0.5
0.9
1
Φ
S21
0.669
0.778
0.781
0.780
0.782
0.764
0.765
0.725
0.687
0.662
0.677
-158
-179
174
173
167
162
159
153
148
142
139
65.164
15.773
8.622
7.535
5.203
4.229
3.896
3.150
2.364
1.806
1.558
124
105
107
109
120
122
125
131
138
152
165
0.008
0.013
0.021
0.021
0.061
0.062
0.090
0.132
0.152
0.211
0.263
47
81
0.635
0.589
0.600
0.598
0.600
0.605
0.600
0.590
0.575
0.569
0.586
-107
-164
-174
-176
180
177
176
174
171
167
162
119
134
160
171
173
179
170
161
154
1.5
1.8
2
2.5
3
3.5
4
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START499
TAPE & REEL DIMENSIONS
mm
MIN.
178.5
12.8
20.2
54.5
TYP.
179
MAX
A
C
179.5
13.5
13.0
D
N
55
55.5
14.4
T
Ao
Bo
Ko
Po
P
2.25
2.7
1.2
3.8 (cumulative 10 Po)
4.0
4.0
4.2 (cumulative 10 Po)
DEVICE ORIENTATION
TOP VIEW
END VIEW
499
499
499
499
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START499
PACKAGE DIMENSIONS SOT343 (SC-70 4 leads)
1.30
1.15-1.35
2.00-2.20
1.15
0.55-0.65
1.90-2.10
1.15-1.35
0.80-1.00
0.45
0.25-0.35
0.00-0.10
0.10-0.20
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START499
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2002 STMicroelectronics - All Rights Reserved
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