SMTPA200 [STMICROELECTRONICS]
TRISILETM; TRISILETM
| 型号： | SMTPA200 |
| 厂家： | 
ST |
| 描述： | TRISILETM |
| 文件： | 总5页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMTPA SERIES
TRISIL
FEATURES
BIDIRECTIONAL CROWBAR PROTECTION.
BREAKDOWN VOLTAGE RANGE:
From 62 V To 270 V.
HOLDINGCURRENT = 150 mA min
REPETITIVE PEAK PULSE CURRENT :
IPP = 50 A, 10/1000 s.
µ
SMB
(JEDEC DO-214AA)
DESCRIPTION
The SMTPAxxseries hasbeen designedto protect
telecommunication equipment against lightning
and transient induced by AC power lines.
SCHEMATIC DIAGRAM
Peak Surge
Voltage
(V)
Voltage
Current
Admissible Necessary
COMPLIES WITH THE
FOLLOWING STANDARDS:
Waveform
Waveform
Ipp
(A)
Resistor
( s)
µ
( s)
µ
( )
Ω
(CCITT) ITU-K20
(CCITT) ITU-K17
VDE0433
1000
1500
2000
2000
10/700
10/700
10/700
1.2/50
5/310
5/310
5/310
1/20
25
38
50
50
-
-
-
-
VDE0878
IEC-1000-4-5
level 3
level 4
10/700
1.2/50
5/310
8/20
50
100
-
-
FCC Part 68, lightningsurge
type A
1500
800
10/160
10/560
10/160
10/560
75
55
12.5
6.5
FCC Part 68, lightningsurge
type B
1000
9/720
5/320
25
-
BELLCORETR-NWT-001089
First level
2500
1000
2/10
10/1000
2/10
10/1000
150
50
11.5
10
BELLCORETR-NWT-001089
Second level
5000
2/10
2/10
150
11.5
CNET l31-24
1000
0.5/700
0.8/310
25
-
October 1998 - Ed: 7A
1/5
SMTPA xxx
ABSOLUTE MAXIMUM RATINGS (Tamb 25°C)
=
Symbol
Parameter
Value
Unit
W
Power dissipation
Peakpulse current
P
T
lead = 50 °C
5
IPP
10/1000 s
50
100
A
µ
8/20 µs
ITSM
Non repetitive surge peak on-state
current
tp = 20 ms
30
A
dV/dt
Critical rate of rise of off-state voltage
VRM
5
KV/ s
µ
Tstg
Tj
Storage temperaturerange
Maximum junction temperature
- 55 to + 150
150
C
°
C
°
Maximum lead temperaturefor soldering during 10 s.
TL
260
°C
THERMAL RESISTANCES
Symbol
Parameter
Value
20
Unit
Junction to leads.
Rth (j-l)
C/W
°
Junction to ambienton printed circuit
with standard footprint dimensions.
Rth (j-a)
100
°C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol
VRM
IRM
VR
Parameter
Stand-offvoltage
Leakage current at stand-offvoltage
ContinuousReverse voltage
Breakdown voltage
Breakovervoltage
VBR
VBO
IH
Holding current
IBO
Breakovercurrent
IPP
Peak pulse current
Capacitance
C
Type
Marking
IRM @ VRM
max.
IR @ VR
max.
note 1
VBO @ IBO
IH
C
max.
max.
min.
note3
max.
note4
note2
Laser
A
µ
V
A
µ
V
V
mA
mA
pF
SMTPA62
SMTPA68
SMTPA100
SMTPA120
SMTPA130
SMTPA180
SMTPA200
SMTPA220
SMTPA240
SMTPA270
U01
U05
U13
U17
U19
U25
U27
U31
U35
U39
2
56
61
90
108
117
162
180
198
216
243
50
50
50
50
50
50
50
50
50
50
62
82
800
800
800
800
800
800
800
800
800
800
150
150
150
150
150
150
150
150
150
150
150
150
100
100
100
100
100
100
100
100
2
2
2
2
2
2
2
2
2
68
90
100
120
130
180
200
220
240
270
133
160
173
240
267
293
320
360
All parameters tested at 25 C, except where indicated.
°
Note 1: IR measured at VR guaranteeVBRmin
Note 2: Measured at 50 Hz (1 cycle) - See test circuit 1.
V
Note 3: See test circuit 2.
Note 4: VR = 1V, F = 1MHz. Refer to fig.3 for C versus VR.
≥
R
2/5
SMTPA xxx
TEST CIRCUIT 1 FOR IBO and VBO parameters:
= 20ms
tp
Auto
Transformer
220V/2A
R1
140
static
relay.
R2
240
K
V
V
BO
measure
out
D.U.T
I
BO
measure
Transformer
220V/800V
5A
TEST PROCEDURE :
Pulse Test duration (tp = 20ms):
- For Bidirectional devices = SwitchK is closed
- For Unidirectional devices = Switch K is open.
V
OUT Selection
- Device with VBO 200 Volt
<
- VOUT = 250 VRMS, R = 140
.
Ω
1
- Device with VBO ≥ 200 Volt
- VOUT = 480 VRMS, R = 240
.
Ω
2
TEST CIRCUIT 2 for IH parameter.
R
- V
P
D.U.T.
V
= - 48 V
BAT
Surge generator
This is a GO-NOGO Test which allows to confirm the holdingcurrent (IH) level in a functional
test circuit.
TEST PROCEDURE :
1) Adjustthe currentlevel at the IH value by short circuiting the AK of the D.U.T.
2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs.
3) The D.U.T will come back off-state within 50 ms max.
3/5
SMTPA xxx
Fig. 1: Non repetitive surge peak on-state current
versus overload duration (Tj initial=25°C).
Fig. 2: Relativevariation of holding current versus
junction temperature.
(A)
TSM
Fig. 3: Relative variation of junction capacitance
versus reverse applied voltage (typical values).
Note: For VRM upper than 56V, the curve is ex-
trapolated (dotted line).
Fig. 4: On-state current versus on-state voltage
(typical values).
IT(A)
VR(V)
VT(V)
Fig. 5: Transient thermal impedance junction to
ambient versus pulse duration (for FR4 PC Board
withTlead = 10 mm).
tp(s)
4/5
SMTPA xxx
SM TPA 100
SURFACE MOUNT
VOLTAGE
TRISIL PROTECTION 50 A
MARKING : Logo,date code, type code.
PACKAGE MECHANICAL DATA.
SMB (JEDEC DO-214AA)
DIMENSIONS
E1
REF.
Millimeters
Inches
Min.
Min.
Max.
2.45
0.20
2.20
0.41
5.60
4.60
3.95
1.60
Max.
0.096
0.008
0.087
0.016
0.220
0.181
0.156
0.063
D
A1
A2
b
1.90
0.05
1.95
0.15
5.10
4.05
3.30
0.75
0.075
0.002
0.077
0.006
0.201
0.159
0.130
0.030
c
E
E
A1
E1
D
A2
C
L
b
L
FOOT PRINT DIMENSION (in millimeters)
SMB
Packaging :
Standard packaging is in tape and reel
Weight : 0.12g
2.3
1.52
2.75
1.52
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use of such information nor forany infringementof patents or other rights of thirdparties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
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1998 STMicroelectronics - Printed in Italy - All rights reserved.
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