SD2943 [STMICROELECTRONICS]
RF Power Transistor HF/VHF/UHF N - Channel MOSFETs; RF功率晶体管HF / VHF / UHF N - 沟道MOSFET
| 型号： | SD2943 |
| 厂家： | 
ST |
| 描述： | RF Power Transistor HF/VHF/UHF N - Channel MOSFETs |
| 文件： | 总14页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD2943
RF Power Transistor
HF/VHF/UHF N - Channel MOSFETs
General Features
■ HIGH POWER CAPABILITY
■ POUT = 350W MIN. WITH 22dB GAIN @ 30
MHz
■ PSAT = 450 W
■ LOW R
DS(on)
■ THERMALLY ENHANCED PACKAGING FOR
M177 Epoxy sealed
LOWER JUNCTION TEMPERATURES
■ GOLD METALLIZATION
■ EXCELLENT THERMAL STABILITY
■ COMMON SOURCE CONFIGURATION
Pin Connection
4
1
5
3
2
Description
The SD2943 is a gold metallized N-Channel MOS
field-effect RF power transistor. It is intended for
use in 50 V dc large signal applications up 150
MHz. SD2943 offers a 20% higher power
saturation than SD2933, it is idea for ISM
applications where reliability and ruggedness are
critical factors.
4. Source
5. Source
1. Drain
2. Source
3. Gate
Order Codes
Part Number
Marking
Package
Packaging
SD2943
SD2943
M177
Plastic Tray
Rev 1
1/14
October 2005
www.st.com
14
SD2943
Contents
1
Electrical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
1.2
1.3
Maximum Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics (T
= 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
CASE
2
3
4
5
6
Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Typical Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Mechanical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/14
SD2943
1 Electrical Data
1
Electrical Data
1.1
Maximum Rating
Table 1.
Absolute Maximum Rating (T
= 25°C)
CASE
Symbol
Parameter
Value
130
Unit
V
(1)
Drain Source Voltage
V
(BR)DSS
(2)
Drain-Gate Voltage (R = 1MΩ)
130
V
V
GS
DGR
V
Gate-Source Volatge
Drain Current
±20
40
V
A
GS
I
D
P
Power Dissipation
648
200
1500
50
W
DISS
T
Max. Operating Junction Temperature
°C
mJ
mJ
j
E
Avalanche Energy, Single Pulse (I = 60A)
AS
D
(2)
Avalanche Energy, Repetitive
Storage Temperature
E
AR
T
-65 to +150
°C
STG
1. TJ = 150 °C
2. Repetitive rating: Pulse width limited by maximum junction temperature; Repetitive avalanche causes additional power
losses that can be calculated as: PAV = EAR * f
1.2
Thermal Data
Table 2.
Symbol
Thermal data
Parameter
Junction to Case thermal resistance
Value
Unit
R
0.27
°C/W
thJC
3/14
1 Electrical Data
SD2943
1.3
Electrical Characteristics (TCASE = 25°C)
Table 3.
Static
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
(1)
V
= 0 V
I
= 200 mA
130
V
V
GS
DS
(BR)DSS
I
V
= 0 V
V
V
= 50 V
= 0 V
100
500
4
µA
nA
V
DSS
GS
DS
DS
I
V
= 20 V
= 10 V
= 10 V
= 10 V
GSS
GS
V
V
I = 250 mA
2
GS(Q)
DS
D
V
V
I = 20 A
2
V
DS(ON)
(2)
GS
D
V
I = 10 A
10
mho
G
DS
D
FS
C
V
= 0 V
= 0 V
= 0 V
V
= 50 V
= 50 V
= 50 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
830
470
35
pF
pF
pF
ISS
GS
DS
DS
DS
C
V
V
V
OSS
RSS
GS
C
V
GS
1. TJ = 150°C
2. GFS sorts for each unit see Table 5
Table 4.
Symbol
Dynamic
Test Conditions
= 250 mA
Min.
350
22
Typ.
450
25
Max.
Unit
W
P
V
V
V
V
= 50 V
I
I
I
I
f = 30 MHz
f = 30 MHz
f = 30 MHz
f = 30 MHz
OUT
DD
DD
DD
DD
DQ
DQ
DQ
DQ
G
= 50 V
= 50 V
= 50 V
= 250 mA P
= 250 mA P
350 W
OUT =
dB
%
PS
h
= 350 W
350 W
60
65
D
OUT
= 250 mA P
Load
Mismatch
OUT =
3:1
VSWR
All Phase Angles
G SORTS
FS
Table 5.
Symbol
Value
A
B
C
D
E
F
10 ÷ 10.99
11 ÷ 11.99
12 ÷ 12.99
13 ÷ 13.99
14 ÷ 14.99
15 ÷ 15.99
16 ÷ 16.99
17 ÷ 18
G
H
4/14
SD2943
2 Impedance
2
Impedance
Figure 1. Impedance Data Schematic
D
ZDL
Typical Drain
Load Impedance
Typical Input
Impedance
G
ZIN
S
Table 6.
Impedance Data
Z
(Ω)
Z
(Ω)
DL
f
IN
30 MHz
108 MHz
175 MHz
1.3 - j 2.9
1.4 - j 2.4
1.4 - j 2.2
3.1 + j 2.3
1.9 + j 1.4
1.7 +j 1.6
5/14
3 Typical Performance
SD2943
3
Typical Performance
Figure 2. Capacitance Vs Drain Voltage
Figure 3. Drain Current Vs Gate Voltage
10000
40
35
30
25
20
15
10
5
Vds = 10 V
CISS
1000
COSS
100
CRSS
Tc = +20 ºC
10
Tc = +80 ºC
Tc = -20 ºC
4
Freq = 1 MHz
1
0
0
4
8
12 16 20 24 28 32 36 40 44 48 52 56
Vdd (V)
0
1
2
3
5
6
Vgs (V)
Figure 4. Gate-Source Voltage Vs Case Temp. Figure 5. Max. Therm. Resist. Vs Case Temp.
1.15
0.33
1.1
Id= 12 A
0.32
Id= 10 A
1.05
Id= 7 A
0.31
Id= 5 A
Id= 15 A
1
0.3
0.95
Id=.1 A
0.29
Id= 4 A
0.9
0.85
0.8
0.28
0.27
0.26
Id= 3 A
Id= 2 A
Id= 1 A
Vdd= 10 V
Id=.25 A
-25
0
25
50
75
100
25 30 35 40 45 50 55 60 65 70 75 80 85
Tc, CASE TEMPERATURE (°C)
Tc, CASE TEMPERATURE (ºC)
6/14
SD2943
3 Typical Performance
Figure 6. Pout Vs Input Power & Drain Voltage Figure 7. Pout Vs Input Power & Case Temp.
500
450
400
350
300
250
200
150
100
50
500
450
400
350
300
250
200
150
100
50
Tc = +25 ºC
Tc = -20 ºC
Tc = +80 ºC
Vdd = 50 V
Vdd = 40 V
Freq = 30 MHz
Vdd = 50 V
Idq = 250 mA
Freq = 30 MHz
Idq = 250 mA
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Pin (W)
Pin (W)
Table 7.
Efficiency Vs Pout
Figure 8. Power Gain Vs Pout & Case Temp.
30
80
70
60
50
40
30
20
10
28
26
24
22
20
18
16
14
Tc = +25 ºC
Tc = -20 ºC
Tc = +25 ºC
Tc = +80 ºC
Freq = 30 MHz
Vdd = 50 V
Idq = 250 mA
Freq = 30 MHz
Vdd = 50 V
Idq = 250 mA
0
0
50
100 150 200 250 300 350 400 450 500
Pout (W)
0
50
100 150 200 250 300 350 400 450 500
Pout (W)
7/14
3 Typical Performance
SD2943
Figure 9. Pout Vs Gate Voltage
Figure 10. Pout Vs Drain Voltage
440
440
400
Tc = -20 ºC
Pin = 2.2 W
Freq = 30 MHz
Idq = 250mA
400
360
320
280
240
200
160
120
80
Tc = +25 ºC
360
320
280
240
200
160
120
80
Tc = +80 ºC
Pin = 1.1 W
Pin = 0.55 W
Freq = 30 MHz
Pin = 1.1 W
Vdd = 50 V
40
Idq = 250 mA
0
26 28 30 32 34 36 38 40 42 44 46 48 50 52
Vdd (V)
-3 -2.5 -2 -1.5 -1 -0.5
0
0.5
1
1.5
2
2.5
3
3.5
Vgs (V)
8/14
SD2943
4 Test Circuit
4
Test Circuit
Figure 11. 30 MHz Test Circuit Schematic
Note: 1 Dimension at component symbol are reference for component placement.
2 Gap between group and trasmission files are 0.056[1.42] typ.
3 Transmission lime are not 1:1 scale.
4 Input and output trasmission line are 50Ω
9/14
4 Test Circuit
SD2943
Table 8.
30 MHz Test Circuit Component Part List
Symbol
C1,C9
Description
0.01 µF / 500 V SURFACE MOUNT CERAMIC CHIP CAPACITOR
750 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR
300 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C2, C3
C4
C5,C10,C11,C14,C16 10000 pF ATC 200B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C6
C7
510 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR
300 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR
175-680 pF TYPE 46 STANDARD TRIMMER CAPACITOR
47 µF / 63 V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR
1200 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR
100 µF / 63 V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR
1 KΩ 1 W SURFACE MOUNT CHIP RESISTOR
C8
C12
C13
C15
R1,R3
R2
560Ω 2 W WIRE-WOUND AXILS LEAD RESISTOR
T1
HF 2-30 MHz SURFACE MOUNT 9:1 TRANSFORMER
RG - 142B/U 50Ω COAXIAL CABLE OD = 0.165[4.18] L 15”[381.00] COVERED WITH
15”[381.00] TINNED COPPER TUBULAR BRAND 13/65” [5.1] WIDTH
T2
L1
L2
1 3/4 TURN AIR-WOUND 16 AWG ID = 0.219 [5.56] POLY-COATED MAGNET WIRE
1 3/4 TURN AIR-WOUND 12 AWG ID = 0.250 [6.34] BUS BAR WIRE
3 TURNS 14 AWG WIRE THROUGH FAIR RITE TOROID
SURFACE MOUNT EMI SHIELD BEAD
RFC1,RFC2
FB1
FB2
TOROID
PCB
ULTRALAM 2000. 0.030” THK, εr = 2.55, 2 Oz ED CU BOTH SIDES
10/14
SD2943
4 Test Circuit
Figure 12. 30 MHz Test Circuit Photomaster
6.4 inches
Figure 13. 30 MHz Test Circuit
11/14
5 Mechanical Data
SD2943
5
Mechanical Data
Table 9.
DIM.
M177 (.550 DIA 4/L N/HERM W/FLG)
mm.
inch
TYP
MIN.
TYP
MAX.
MIN.
MAX.
A
B
C
D
E
F
G
H
I
5.72
6.73
5.97
6.96
0.225
0.265
0.860
1.130
0.545
0.003
0.098
0.150
0.235
0.275
0.870
1.140
0.555
0.007
0.108
0.170
0.280
1.120
0.635
21.84
28.70
13.84
0.08
22.10
28.96
14.10
0.18
2.49
2.74
3.81
4.32
7.11
J
27.43
15.88
28.45
16.13
1.080
0.625
K
Figure 14. M177 Package Dimensions
12/14
SD2943
6 Revision History
6
Revision History
Date
18 Oct 2005
Revision
Description of Changes
1
First Issue.
13/14
6 Revision History
SD2943
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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14/14
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