PD54003S [STMICROELECTRONICS]
RF POWER TRANSISTORS The LdmoST Plastic FAMILY; RF功率晶体管的LDMOST塑料系列
| 型号： | PD54003S |
| 厂家： | 
ST |
| 描述： | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| 文件： | 总10页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD54003 - PD54003S
RF POWER TRANSISTORS
LdmoST
The
Plastic FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 3 W with 12 dB gain @ 500 MHz / 7.5V
• NEW RF PLASTIC PACKAGE
PowerSO-10RF
(Formed Lead)
ORDER CODE
PD54003
BRANDING
XPD54003
DESCRIPTION
The PD5400 is a common source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 7V in common source mode at frequencies of
up to 1GHz. PD54003 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD54003’s su-
perior linearity performance makes it an ideal so-
lution for portable radio.
PowerSO-10RF
(Straight Lead)
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
ORDER CODE
PD54003S
BRANDING
XPD54003S
= 25 OC)
ABSOLUTE MAXIMUM RATINGS(T
CASE
Parameter
Drain Source Voltage
Symbol
Value
Unit
V
25
±20
V
V
(BR)DSS
V
Gate-Source Voltage
Drain Current
GS
I
4
A
D
0
P
52.8
W
DISS
Power Dissipation (@ Tc = 70 C)
T
Max. Operating Junction Temperature
Storage Temperature
165
0
j
C
C
T
-65 to 165
0
STG
THERMAL DATA
0C/W
1/10
R
Junction-Case Thermal Resistance
1.8
th(j-c)
May 2000
PD54003 - PD54003S
= 25 0C)
ELECTRICAL SPECIFICATION(T
CASE
STATIC
Symbol
Parameter
Min.
Typ.
Max.
1
Unit
µA
µA
V
I
V
V
V
V
V
V
V
V
= 0
V
V
V
= 25 V
= 0 V
DSS
GS
GS
DS
GS
DS
GS
GS
GS
DS
DS
I
= 20 V
= 10 V
= 10 V
= 10 V
= 0 V
= 0 V
= 0 V
1
GSS
V
I
D
= 50 mA
= 1 A
2.0
5.0
1.3
GS(Q)
V
I
V
DS(ON)
D
g
FS
I
D
= 1 A
1.5
59
mho
pF
pF
pF
C
V
V
V
= 7.5 V
DS
f = 1 MHz
f = 1 MHz
f = 1 MHz
ISS
OSS
RSS
C
= 7.5 V
= 7.5 V
43
DS
DS
C
4.0
DYNAMIC
Symbol
Parameter
= 50 mA
Min.
Typ.
Max.
Unit
W
P
f = 500 MHz
f = 500 MHz
f = 500 MHz
f = 500 MHz
V
V
V
= 7.5 V
= 7.5 V
= 7.5 V
= 9.5 V
I
DQ
3
OUT
DD
DD
DD
G
P
P
= 3 W
= 3 W
= 3 W
I
I
I
= 50 mA
= 50 mA
= 50 mA
12
55
dB
%
PS
OUT
OUT
DQ
DQ
DQ
η
D
LOAD
Mismatch
V
P
OUT
DD
20:1
VSWR
ALL PHASE ANGLES
D
PIN CONNECTION
SOURCE
DRAIN
Z
DL
GATE
Typical Input
Impedance
Typical Drain
Load Impedance
G
Zin
S
SC15200
SC13140
IMPEDANCE DATA
PD54003S
PD54003
Zin
Ω
Zdl
Ω
Zin
Ω
Zdl
Ω
Frequency
MHz
Frequency
MHz
520
500
480
1.993 - j1.098
1.553 - j1.251
2.245 - j0.077
2.564 + j0.656
2.661 + j0.139
3.436 + j1.013
520
500
480
1.534 - j2.104
1.209 - j2.451
1.400 - j3.986
2.524 + j2.369
3.192 + j3.147
2.805 + j2.724
2/10
PD54003 - PD54003S
TYPICAL PERFORMANCE
Capacitance vs. Drain Voltage
Drain Current vs. Gate Voltage
1000
8
7
6
5
4
3
2
Vds=10V
f =1MHz
100
Ciss
Coss
Crss
10
1
1
0
1
2
3
4
5
6
7
8
9
0
5
10
15
VGS, GATE-SOURCE VOLTAGE (V)
VDD, DRAIN VOLTAGE (V)
Gate-Source Voltage vs. Case Temperature
1.06
1.04
1.02
1
ID
=1.5A
= 2A
=1A
0.98
0.96
0.94
0.92
I
D
ID
Vds=10V
ID=0.5A
D
I = 0.25A
-25
0
25
50
75
100
Tc, CASE TEMPERATURE (°C)
3/10
PD54003 - PD54003S
TYPICAL PERFORMANCE
Output Power vs. Input Power
PD54003
Power Gain vs. Output Power
16
5
480MHz
14
480MHz
4
500MHz
520MHz
12
3
520MHz
500MHz
10
8
2
Vdd=7.5V
Idq=50mA
Vdd=7.5V
Idq=50mA
1
0
6
0
0.1
0.2
0.3
0.4
0
1
2
3
4
Pin, INPUT POWER (W)
Pout, OUTPUT POWER (W)
Drain Efficiency vs. Output Power
Return Loss vs. Output Power
80
0
480MHz
500MHz
70
520MHz
-10
-20
60
50
40
30
20
10
480MHz
-30
Vdd= 7.5 V
Idq=50 mA
Vdd= 7.5 V
Idq=50mA
520MHz
500MHz
-40
0
1
2
3
4
0
1
2
3
4
Pout,OUTPUT POWER (W)
Pout,OUTPUT POWER (W)
Output Power vs. Bias Current
Drain Efficiency vs. Bias Current
70
60
50
40
30
20
10
3.8
480MHz
3.7
3.6
3.5
3.4
3.3
3.2
3.1
3
500MHz
500MHz
520MHz
480MHz
520MHz
Pin=23.3dBm
Vdd=7.5V
Pin= 23.3 dBm
Vdd=7.5V
2.9
0
100
200
300
400
500
600
700
800
0
100 200 300 400 500 600 700 800
IDQ, BIAS CURRENT (mA)
IDQ, BIAS CURRENT (mA)
4/10
PD54003 - PD54003S
TYPICAL PERFORMANCE
Output Power vs. Supply Voltage
Drain Efficiency vs. Supply Voltage
5.5
5
70
60
50
40
30
20
480MHz
480MHz
520MHz
4.5
500MHz
500MHz
4
520MHz
3.5
3
2.5
2
Pin=23.3dBm
Idq=50mA
Pin=23.3dBm
Idq=50 mA
1.5
5
6
7
8
9
10
5
6
7
8
9
10
VDD, SUPPLY VOLTAGE (V)
VDD,SUPPLY VOLTAGE (V)
PD54003S
Output Power vs. Gate-Source Voltage
Output Power vs. Input Power
5
5
500MHz
480MHz
480MHz
4
3
2
1
0
4
3
2
1
0
520MHz
520MHz
500MHz
Pin=23.3dBm
Vdd=7.5V
Vdd= 7.5 V
Idq=50 mA
0
1
2
3
4
0
0.1
0.2
0.3
0.4
0.5
VGS, GATE-SOURCE VOLTAGE (V)
Pin, INPUT POWER (W)
Power Gain vs. Output Power
Drain Efficiency vs. Output Power
70
16
14
12
10
8
520MHz
480MHz
520MHz
60
500MHz
50
480MHz
500MHz
40
30
20
10
Vdd=7.5 V
Idq=50mA
Vdd=7.5V
Idq=50mA
6
0
1
2
3
4
0
1
2
3
4
Pout, OUTPUT POWER (W)
Pout, OUTPUT POWER (W)
5/10
PD54003 - PD54003S
TYPICAL PERFORMANCE
Return Loss vs. Output Power
Output Power vs. Bias Current
0
-10
-20
-30
-40
3.5
3.4
3.3
3.2
3.1
3
520MHz
500MHz
500MHz
520MHz
480MHz
480MHz
2.9
2.8
2.7
2.6
Pin=22dBm
Vdd=7.5 V
Vdd=7.5V
Idq=50mA
0
1
2
3
4
0
100 200 300 400 500 600 700 800
IDQ, BIAS CURRENT(mA)
Pout, OUTPUT POWER (W)
Drain Efficency vs. Bias Current
Output Power vs. Supply Voltage
60
6
5
500MHz
50
40
30
20
10
520MHz
480MHz
480MHz
520MHz
500MHz
4
3
2
1
Pin=22dBm
Vdd=7.5V
Pin=22dBm
Idq=50mA
0
100
200
300
400
500
600
700 800
5
6
7
8
9
10
IDQ, BIAS CURRENT (mA)
VDD, SUPPLY VOLTAGE (V)
Drain Efficency vs. Supply Voltage
Output Power vs. Gate-Source Voltage
70
4
480MHz
480 MHz
3
60
500 MHz
500MHz
520 MHz
2
1
50
520MHz
40
30
Pin= 22dBm
Vdd=7.5V
Pin=22dBm
Idq=50mA
0
0
1
2
3
4
5
6
7
8
9
10
VGS, GATE-SOURCE VOLTAGE (V)
VDD, SUPPLY VOLTAGE (V)
6/10
PD54003 - PD54003S
TEST CIRCUIT SCHEMATIC
TEST CIRCUIT COMPONENT PART LIST
SHORT FERRITE BEAD, FAIR RITE
PRODUCTS (2743021446)
B1,B2
R3
R4
Z1
15 Ω, 0805 CHIP RESISTOR
C1,C13
240pF, 100 mil CHIP CAPACITOR
0 TO 20pF TRIMMER CAPACITOR
33 KΩ, 1/8 W RESISTOR
C2,C3,C4,C10,
C11,C12
0.175” X 0.080” MICROSTRIP
C5
130pF, 100 mil CHIP CAP
120pF, 100 mil CHIP CAP
Z2
Z3
1.049” X 0.080” MICROSTRIP
0.289” X 0.080” MICROSTRIP
C6,C17
10µF, 50V ELECTROLYTIC
CAPACITOR
C7,C14
Z4
0.026” X 0.080” MICROSTRIP
C8,C15
C9,C16
L1
1,200pF, 100 mil CHIP CAPACITOR
0.1 F, 100 mil CHIP CAPACITOR
55.5 Nh, 5 TURN, COILCRAFT
TYPE N FLANGE MOUNT
Z5
0.192” X 0.223” MICROSTRIP
0.260” X 0.223” MICROSTRIP
0.064” X 0.080” MICROSTRIP
0.334” X 0.080” MICROSTRIP
0.985” X 0.080” MICROSTRIP
0.472” X 0.080” MICROSTRIP
ROGER, ULTRA LAM 2000
Z6,Z7
Z8
N1,N2
R1
Z9
15 Ω, 0805 CHIP RESISTOR
1,0 KΩ, 1/8 W RESISTOR
Z10
Z11
R2
BOARD
THK 0.030”, εr
= 2.55
2oz. ED Cu 2 SIDES.
7/10
PD54003 - PD54003S
TEST CIRCUIT
TEST CIRCUIT PHOTOMASTER
6.4 inches
8/10
PD54003 - PD54003S
PowerSO-10RF (Straight Lead) MECHANICAL DATA
PowerSO-10RF (Formed Lead) MECHANICAL DATA
9/10
PD54003 - PD54003S
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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10/10
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