MJE3055 [STMICROELECTRONICS]
COMPLEMENTARY SILICON POWER TRANSISTORS; 互补硅功率晶体管
| 型号： | MJE3055 |
| 厂家： | 
ST |
| 描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 文件： | 总4页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJE2955T
MJE3055T
COMPLEMENTARY SILICON POWER TRANSISTORS
■
■
SGS-THOMSON PREFERRED SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The MJE3055T is a silicon epitaxial-base NPN
transistor in Jedec TO-220 package. It is
intended for power switching circuits and
general-purpose amplifiers. The complementary
PNP type is MJE2955T.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Collector-Emitter Voltage (IB = 0)
Collector-Base Voltage (IE = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Value
Unit
60
V
V
70
5
V
10
A
IB
Base Current
6
75
A
o
Ptot
Total Power Dissipation at Tcase ≤ 25 C
Storage Temperature
W
oC
oC
Tstg
Tj
-55 to 150
150
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
1/4
June 1997
MJE2955T / MJE3055T
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.66
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = 30 V
Min.
Typ.
Max.
Unit
ICEO
Collector Cut-off
Current (IB = 0)
700
µA
ICEX
ICBO
IEBO
Collector Cut-off
Current (VBE = 1.5V)
VCE = 70 V
CASE = 150oC
1
5
mA
mA
T
Collector Cut-off
Current (IE = 0)
VCBO = 70 V
CASE = 150oC
1
10
mA
mA
T
Emitter Cut-off Current VEBO = 5 V
(IC = 0)
5
mA
VCEO(sus) Collector-Emitter
Sustaining Voltage
IC = 200 mA
60
V
VCE(sat)
VBE(on)
hFE
Collector-Emitter
Sustaining Voltage
IC = 4 A
IC = 10 A
IB = 0.4 A
IB = 3.3 A
1.1
8
V
V
Base-Emitter on
Voltage
IC = 4 A
VCE = 4 V
1.8
V
DC Current Gain
IC = 4 A
IC = 10 A
VCE = 4 V
VCE = 4 V
20
5
70
fT
Transistor Frequency
IC = 500 mA
f = 500 KHz
VCE = 10 V
2
MHz
Pulsed: Pulse duration = 300µs, duty cycle ≤ 2 %
For PNP type voltage and current values are negative.
2/4
MJE2955T / MJE3055T
TO-220 MECHANICAL DATA
mm
inch
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
TYP.
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
3/4
MJE2955T / MJE3055T
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
4/4
相关型号：
MJE3055-BP
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN
MCC
©2020 ICPDF网 联系我们和版权申明