MJ802_03 [STMICROELECTRONICS]
SILICON NPN POWER TRANSISTOR; 硅NPN功率晶体管型号: | MJ802_03 |
厂家: | ST |
描述: | SILICON NPN POWER TRANSISTOR |
文件: | 总4页 (文件大小:43K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MJ802
®
SILICON NPN POWER TRANSISTOR
■
STMicroelectronics PREFERRED
SALESTYPE
DESCRIPTION
The MJ802 is a silicon Epitaxial-Base power
transistor mounted in Jedec TO-3 metal case. It
is intended for general purpose power amplifier
and switching applications.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Collector-emitter Voltage (IB = 0)
Collector-base Voltage (IE = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Value
90
Unit
V
V
100
4
V
30
A
IB
Base Current
7.5
A
o
Ptot
200
W
oC
oC
Total Dissipation at Tc ≤ 25 C
Tstg
Tj
Storage Temperature
-65 to 200
200
Max. Operating Junction Temperature
1/4
October 2003
MJ802
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.875
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCB = 100 V
VCB = 100 V
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
1
5
mA
mA
o
Tcase = 150 C
IEBO
Emitter Cut-off Current VEB = 4 V
(IC = 0)
1
mA
VCEO(sus) Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 200 mA
90
V
VCER(sus) Collector-emitter
Sustaining Voltage
(RBE = 100 Ω)
IC = 200 mA
100
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 7.5 A
IC = 7.5 A
IB = 0.75 A
IB = 0.75 A
0.8
1.3
V
V
V
VBE(sat)
Base-Emitter
Saturation Voltage
VBE
hFE
fT
Base-Emitter Voltage
DC Current Gain
IC = 7.5 A
IC = 7.5 A
VCE = 2 V
VCE = 2 V
VCE = 10 V
1.3
25
2
100
Transition Frequency
IC = 1 A
MHz
f = 1 MHz
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/4
MJ802
TO-3 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
11.00
0.97
TYP.
MAX.
13.10
1.15
MIN.
0.433
0.038
0.059
0.327
0.748
0.421
0.649
0.984
0.157
1.515
1.187
MAX.
0.516
0.045
0.065
0.351
0.787
0.437
0.677
1.023
0.161
1.547
1.193
A
B
C
D
E
G
N
P
R
U
V
1.50
1.65
8.32
8.92
19.00
10.70
16.50
25.00
4.00
20.00
11.10
17.20
26.00
4.09
38.50
30.00
39.30
30.30
A
D
P
C
G
R
P003F
3/4
MJ802
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
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