M74HC51M1R [STMICROELECTRONICS]
DUAL 2 WIDE 2 INPUT AND/OR INVERT GATE; DUAL 2宽2输入和/或反转门
| 型号： | M74HC51M1R |
| 厂家： | 
ST |
| 描述： | DUAL 2 WIDE 2 INPUT AND/OR INVERT GATE |
| 文件： | 总9页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M54HC51
M74HC51
DUAL 2 WIDE 2 INPUT AND/OR INVERT GATE
.
.
.
.
.
.
.
.
HIGH SPEED
tPD = 10 ns (TYP.) AT VCC = 5 V
LOW POWER DISSIPATION
ICC = 1 µA (MAX.) AT TA = 25 °C
HIGH NOISE IMMUNITY
VNIH = VNIL = 28 % VCC (MIN.)
OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
SYMMETRICAL OUTPUT IMPEDANCE
IOH = IOL = 4 mA (MIN.)
BALANCED PROPAGATION DELAYS
tPLH = tPHL
WIDE OPERATING VOLTAGE RANGE
B1R
(Plastic Package)
F1R
(Ceramic Package)
M1R
(Micro Package)
C1R
(Chip Carrier)
VCC (OPR) = 2 V TO 6 V
PIN AND FUNCTION COMPATIBLE WITH
54/74LS51
ORDER CODES :
M54HC51F1R
M74HC51B1R
M74HC51M1R
M74HC51C1R
DESCRIPTION
The M54/74HC51 is a high speed CMOS DUAL 2
WIDE-2 INPUT AND/OR INVERT GATE fabricated
in silicon gate C2MOS technology. It has the same
high speed performance of LSTTL combined with
true CMOS low power consumption. It contains a 2-
WIDE 2-INPUT AND-OR-INVERT GATE and a 2-
WIDE 3-INPUT AND-OR-INVERT GATE.
PIN CONNECTIONS (top view)
The internal circuit is composed of 3 stages (2-
INPUT) or 5 stages (3-INPUT) including buffered
output, which gives high noise immunity and a
stableoutput.Allinputs are equipped withprotection
circuits against static discharge and transient ex-
cess voltage.
INPUT AND OUTPUT EQUIVALENT CIRCUIT
NC =
No Internal
Connection
December 1992
1/9
M54/M74HC51
PIN DESCRIPTION
IEC LOGIC SYMBOL
PIN No
SYMBOL
NAME AND FUNCTION
1, 12, 13, 9,
10, 11
1A to 1F
Data Inputs
2, 3, 4, 5
2A to 2D
1Y, 2Y
GND
Data Inputs
Data Outputs
Ground (0V)
8, 6
7
14
VCC
Positive Supply Voltage
TRUTH TABLE
1A
H
1B
H
1C
H
1D
X
1E
X
1F
X
1Y
L
X
X
X
H
H
H
L
ALL OTHER COMBINATIONS
H
TRUTH TABLE
2A
H
X
2B
H
X
2C
X
H
2D
X
H
2Y
L
L
ALL OTHER COMBINATIONS
H
X = DON’T CARE
LOGIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
VI
Parameter
Value
Unit
V
V
Supply Voltage
DC Input Voltage
DC Output Voltage
-0.5 to +7
-0.5 to VCC + 0.5
-0.5 to VCC + 0.5
± 20
VO
V
IIK
DC Input Diode Current
DC Output Diode Current
DC Output Source Sink Current Per Output Pin
mA
mA
mA
mA
mW
oC
IOK
IO
± 20
± 25
± 50
ICC or IGND DC VCC or Ground Current
PD
Tstg
TL
Power Dissipation
500 (*)
Storage Temperature
Lead Temperature (10 sec)
-65 to +150
300
oC
Absolute MaximumRatingsare those values beyond whichdamage tothe device may occur. Functional operation under these condition isnotimplied.
(*) 500 mW: 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC
2/9
M54/M74HC51
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
VI
Parameter
Value
2 to 6
Unit
V
Supply Voltage
Input Voltage
Output Voltage
0 to VCC
0 to VCC
V
VO
V
Top
Operating Temperature: M54HC Series
M74HC Series
-55 to +125
-40 to +85
oC
oC
tr, tf
Input Rise and Fall Time
VCC = 2 V
VCC = 4.5 V
VCC = 6 V
0 to 1000
0 to 500
0 to 400
ns
DC SPECIFICATIONS
Test Conditions
VCC
Value
-40 to 85 oC -55 to 125 oC
74HC 54HC
TA = 25 oC
54HC and 74HC
Symbol
Parameter
Unit
(V)
Min. Typ. Max. Min. Max. Min. Max.
VIH
High Level Input
Voltage
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
V
VIL
Low Level Input
Voltage
0.5
1.35
1.8
0.5
1.35
1.8
0.5
1.35
1.8
VOH
High Level
Output Voltage
1.9
4.4
5.9
2.0
4.5
6.0
1.9
4.4
1.9
4.4
VI =
VIH
or
IO=-20 µA
V
V
5.9
5.9
VIL
IO=-4.0 mA 4.18 4.31
4.13
5.63
4.10
5.60
IO=-5.2 mA 5.68
5.8
0.0
0.0
0.0
VOL
Low Level Output 2.0
Voltage
0.1
0.1
0.1
0.1
0.1
0.1
0.1
VI =
VIH
or
IO= 20 µA
4.5
6.0
4.5
6.0
0.1
0.1
VIL
IO= 4.0 mA
IO= 5.2 mA
0.17 0.26
0.18 0.26
±0.1
0.33
0.33
±1
0.40
0.40
±1
II
Input Leakage
6.0
VI = VCC or GND
µA
µA
Current
ICC
Quiescent Supply 6.0 VI = VCC or GND
Current
1
10
20
3/9
M54/M74HC51
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Test Conditions
Value
TA = 25 oC
54HC and 74HC
-40 to 85 oC -55 to 125 oC
Symbol
Parameter
Unit
VCC
(V)
74HC
54HC
Min. Typ. Max. Min. Max. Min. Max.
tTLH
tTHL
Output Transition
Time
2.0
4.5
6.0
2.0
4.5
6.0
30
8
75
15
95
19
110
22
ns
ns
7
13
16
19
tPLH
tPHL
Propagation
Delay Time
39
13
11
5
100
20
125
25
150
30
17
21
26
CIN
Input Capacitance
10
10
10
pF
pF
CPD (*) Power Dissipation
Capacitance
32
(*) CPD isdefined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load.
(Refer to Test Circuit). Average operting current can be obtained by the followingequation. ICC(opr) = CPD • VCC • fIN + ICC
SWITCHING CHARACTERISTICS TEST CIRCUIT
TEST CIRCUIT ICC (Opr.)
INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF SWITCHING CHARACTERISTICSTEST.
4/9
M54/M74HC51
Plastic DIP14 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
0.51
1.39
TYP.
MAX.
MIN.
0.020
0.055
MAX.
a1
B
b
1.65
0.065
0.5
0.020
0.010
b1
D
E
e
0.25
20
0.787
8.5
2.54
15.24
0.335
0.100
0.600
e3
F
7.1
5.1
0.280
0.201
I
L
3.3
0.130
Z
1.27
2.54
0.050
0.100
P001A
5/9
M54/M74HC51
Ceramic DIP14/1 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
20
MIN.
MAX.
0.787
0.276
A
B
7.0
D
E
3.3
0.130
0.600
0.38
0.015
e3
F
15.24
2.29
0.4
2.79
0.55
1.52
0.31
2.54
10.3
8.05
5.08
0.090
0.016
0.046
0.009
0.060
0.110
0.022
0.060
0.012
0.100
0.406
0.317
0.200
G
H
L
1.17
0.22
1.52
M
N
P
7.8
0.307
Q
P053C
6/9
M54/M74HC51
SO14 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
1.75
0.2
MIN.
MAX.
0.068
0.007
0.064
0.018
0.010
A
a1
a2
b
0.1
0.003
1.65
0.46
0.25
0.35
0.19
0.013
0.007
b1
C
0.5
0.019
c1
D
45° (typ.)
8.55
5.8
8.75
6.2
0.336
0.228
0.344
0.244
E
e
1.27
7.62
0.050
0.300
e3
F
3.8
4.6
0.5
4.0
5.3
0.149
0.181
0.019
0.157
0.208
0.050
0.026
G
L
1.27
0.68
M
S
8° (max.)
P013G
7/9
M54/M74HC51
PLCC20 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
9.78
8.89
4.2
TYP.
MAX.
10.03
9.04
MIN.
0.385
0.350
0.165
MAX.
0.395
0.356
0.180
A
B
D
4.57
d1
d2
E
2.54
0.56
0.100
0.022
7.37
8.38
0.290
0.330
0.004
e
1.27
5.08
0.38
0.050
0.200
0.015
e3
F
G
0.101
M
M1
1.27
1.14
0.050
0.045
P027A
8/9
M54/M74HC51
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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9/9
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