M27C160-70K1TR_技术文档

M27C160

16 Mbit (2Mb x8 or 1Mb x16) UV EPROM and OTP EPROM

■ 5V ± 10% SUPPLY VOLTAGE in READ

OPERATION

■ FAST ACCESS TIME: 70ns

■ BYTE-WIDE or WORD-WIDE

42

CONFIGURABLE

■ 16 Mbit MASK ROM REPLACEMENT

■ LOW POWER CONSUMPTION

– Active Current 70mA at 8MHz

– Standby Current 100µA

1

FDIP42W (F)

PDIP42 (B)

■ PROGRAMMING VOLTAGE: 12.5V ± 0.25V

■ PROGRAMMING TIME: 100µs/byte (typical)

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

44

1

– Device Code: 00B1h

PLCC44 (K)

SO44 (M)

DESCRIPTION

The M27C160 is a 16 Mbit EPROM offered in the

two ranges UV (ultra violet erase) and OTP (one

time programmable). It is ideally suited for micro-

processor systems requiring large data or program

storage and is organised as either 2 Mbit words of

8 bit or 1 Mbit words of 16 bit. The pin-out is com-

patible with a 16 Mbit Mask ROM.

The FDIP42W (window ceramic frit-seal package)

has a transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern.

Figure 1. Logic Diagram

V

CC

20

Q15A–1

A0-A19

15

Table 1. Signal Names

Q0-Q14

E

M27C160

A0-A19

Q0-Q7

Q8-Q14

Q15A–1

E

Address Inputs

Data Outputs

G

Data Outputs

BYTEV

PP

Data Output / Address Input

Chip Enable

G

Output Enable

V

SS

AI00739B

BYTEV

Byte Mode / Program Supply

Supply Voltage

Ground

PP

V

CC

SS

February 1999

1/16

M27C160

Figure 2A. DIP Pin Connections

Figure 2B. PLCC Pin Connections

A18

A17

A7

1

2

3

4

5

6

7

8

9

42 A19

41 A8

40 A9

A6

39 A10

38 A11

37 A12

36 A13

35 A14

34 A15

33 A16

32 BYTEV

A5

1 44

A4

A12

A13

A3

A2

A1

A0

A2

A14

A1

A15

A0 10

A16

M27C160

E

11

12

13

PP

E

12

M27C160

34 BYTEV

PP

V

31

V

SS

G

V

SS

Q15A–1

SS

G

30 Q15A-1

Q0 14

Q8 15

Q1 16

Q9 17

Q2 18

29 Q7

Q0

Q8

Q1

Q7

28 Q14

27 Q6

Q14

Q6

26 Q13

25 Q5

23

Q10 19

Q3 20

24 Q12

23 Q4

AI03012

Q11 21

22

V

CC

AI00740

Warning: NC = Not Connected.

Figure 2C. SO Pin Connections

A new patterncan then be written rapidly to the de-

vice by following the programming procedure.

For applications where the content is programmed

only one time and erasure is not required, the

M27C160 is offered in PDIP42, PLCC44 and

SO44 packages.

NC

A18

A17

A7

A6

A5

A4

A3

A2

A1

A0

E

1

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

NC

2

A19

A8

3

4

A9

DEVICE OPERATION

5

A10

A11

A12

A13

A14

A15

A16

BYTEV

The operating modes of the M27C160 are listed in

the Operating Modes Table. A single power supply

is required in the read mode. All inputs are TTL

6

7

8

compatible except for V and 12V on A9 for the

PP

9

Electronic Signature.

10

11

12

13

14

15

16

17

18

19

20

21

22

Read Mode

M27C160

The M27C160 has two organisations, Word-wide

and Byte-wide. The organisation is selected by the

PP

V

SS

Q15A-1

SS

G

signal level on the BYTEV pin. When BYTEV

PP

is at V the Word-wide organisation is selected

IH

Q0

Q8

Q7

and the Q15A–1 pin is used for Q15 Data Output.

Q14

Q6

When the BYTEV pin is at V the Byte-wide or-

PP

IL

Q1

ganisation is selected and the Q15A–1 pin is used

for the Address Input A–1. When the memory is

logically regarded as 16 bit wide, but read in the

Q9

Q13

Q5

Q2

Q10

Q3

Q12

Q4

Byte-wide organisation, then with A–1 at V the

IL

lower 8 bits of the 16 bit data are selected and with

Q11

V

A–1 at V the upper 8 bits of the 16 bit data are

CC

IH

AI01264

selected.

2/16

M27C160

(1)

Table 2. Absolute Maximum Ratings

Symbol

Parameter

Value

–40 to 125

–50 to 125

–65 to 150

–2 to 7

Unit

°C

V

(3)

T

A

Ambient Operating Temperature

T

Temperature Under Bias

Storage Temperature

Input or Output Voltage (except A9)

Supply Voltage

BIAS

T

STG

(2)

V

IO

V

–2 to 7

V

CC

(2)

A9 Voltage

–2 to 13.5

–2 to 14

V

A9

V

Program Supply Voltage

V

PP

Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may

cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions

above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-

tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-

ity documents.

2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC

voltage on Output is V

3. Depends on range.

+0.5V with possible overshoot to V +2V for a period less than 20ns.

CC

Table 3. Operating Modes

Mode

BYTEV

E

G

A9

X

Q0-Q7

Data Out

Hi-Z

Q8-Q14

Data Out

Hi-Z

Q15A–1

PP

V

Read Word-wide

Data Out

IL

IH

Read Byte-wide Upper

Read Byte-wide Lower

Output Disable

V

X

V

IH

IL

V

X

Hi-Z

IL

V

X

Hi-Z

Data In

Data Out

Hi-Z

V

Pulse

V

Program

X

Data In

Data Out

Hi-Z

Data In

Data Out

Hi-Z

IL

PP

V

Verify

X

IH

IL

IH

V

Program Inhibit

Standby

X

Hi-Z

V

Electronic Signature

Codes

Code

IL

IH

ID

Note: X = V or V , V = 12V ± 0.5V.

IH IL ID

Table 4. Electronic Signature

Identifier

Manufacturer’s Code

Device Code

A0

Q7

Q6

Q5

1

Q4

Q3

Q2

0

Q1

0

Q0

0

Hex Data

20h

V

0

1

0

1

0

IL

1

0

1

B1h

IH

Note: Outputs Q8-Q15 are set to ’0’.

The M27C160 has two control functions, both of

which must be logically active in order to obtain

data at the outputs. In addition the Word-wide or

Byte- wide organisation must be selected.

Chip Enable (E) is the power control and should be

used for device selection. Output Enable (G) is the

output control and should be used to gate data to

the output pins independent of device selection.

Assuming that the addresses are stable, the ad-

dress access time (t

) is equal to the delay

AVQV

from E to output (t

). Data is available at the

ELQV

output after a delay of t

from the falling edge

GLQV

of G, assuming that E has been low and the ad-

dresses have been stable for at least t -t

.

AVQV GLQV

3/16

M27C160

Table 5. AC Measurement Conditions

High Speed

≤ 10ns

Standard

≤ 20ns

Input Rise and Fall Times

Input Pulse Voltages

0 to 3V

1.5V

0.4V to 2.4V

0.8V and 2V

Input and Output Timing Ref. Voltages

Figure 3. Testing Input Output Waveform

Figure 4. AC Testing Load Circuit

1.3V

High Speed

3V

1N914

1.5V

3.3kΩ

0V

DEVICE

UNDER

TEST

OUT

Standard

2.4V

C

L

2.0V

0.8V

0.4V

C

= 30pF for High Speed

= 100pF for Standard

includes JIG capacitance

L

AI01822

AI01823B

(1)

Table 6. Capacitance

Symbol

(T = 25 °C, f = 1 MHz)

A

Parameter

Test Condition

Min

Max

10

Unit

pF

Input Capacitance (except BYTEV

)

V

= 0V

PP

IN

C

IN

Input Capacitance (BYTEV

)

120

12

pF

PP

C

OUT

V

OUT

Output Capacitance

pF

Note: 1. Sampled only, not 100% tested.

Standby Mode

a. the lowest possible memory power dissipation,

The M27C160 has a standby mode which reduces

the active current from 50mA to 100µA. The

M27C160 is placed in the standby mode by apply-

ing aCMOS high signal to the Einput. When in the

standby mode, the outputs are in a high imped-

ance state, independent of the G input.

b. complete assurance that output bus contention

will not occur.

For the most efficient use of these two control

lines, Eshould be decoded and used as the prima-

ry device selecting function, while G should be

made a common connection to all devices in the

array and connected to the READ line from the

system control bus. This ensures that all deselect-

ed memory devices are in their low power standby

mode and that the output pins are only active

when data is required from a particular memory

device.

Two Line Output Control

Because EPROMs are usually used in larger

memory arrays, this product features a 2 line con-

trol function which accommodates the use of mul-

tiple memory connection. The two line control

function allows:

4/16

M27C160

(1)

Table 7. Read Mode DC Characteristics

(T = 0 to 70 °C or –40 to 85 °C; V = 5V ± 5% or 5V ± 10%; V = V

)

CC

A

CC

PP

Symbol

Parameter

Input Leakage Current

Output Leakage Current

Test Condition

Min

Max

±1

Unit

µA

I

0V ≤ V ≤ V

LI

IN

CC

I

0V ≤ V

≤ V

OUT CC

±10

µA

LO

E = V , G = V ,

IL

70

50

mA

I

= 0mA, f = 8MHz

OUT

I

Supply Current

CC

E = V , G = V ,

IL

I

= 0mA, f = 5MHz

OUT

I

E = V

Supply Current (Standby) TTL

Supply Current (Standby) CMOS

Program Current

1

mA

µA

V

CC1

IH

I

E > V – 0.2V

CC

100

10

CC2

I

V

= V

PP CC

PP

V

Input Low Voltage

–0.3

2

0.8

IL

(2)

V

+ 1

Input High Voltage

V

CC

IH

V

I

= 2.1mA

Output Low Voltage

0.4

OL

V

I

= –400µA

OH

Output High Voltage TTL

2.4

OH

Note: 1. V must be applied simultaneously with or before V and removed simultaneously or after V .

PP

CC

PP

2. Maximum DC voltage on Output is V +0.5V.

CC

System Considerations

This capacitor should be mounted near the power

supply connection point. The purpose of this ca-

pacitor is to overcome the voltage drop caused by

the inductive effects of PCB traces.

The power switching characteristics of Advanced

CMOS EPROMs require carefull decoupliing of

the supplies to the devices. The supply current I

CC

has three segments of importance to the system

designer: the standby current, the active current

and the transient peaks that are produced by the

falling and rising edges of E.

The magnitude of the transient current peaks is

dependant on the capacititive and inductive load-

ing of the device outputs. The associated transient

voltage peaks can be supressed by complying

with the two line output control and by properly se-

lected decoupling capacitors. It is recommended

that a 0.1µF ceramic capacitor is used on every

Programming

When delivered (and after each erasure for UV

EPROM), all bits of the M27C160 are in the ’1’

state. Data is introduced by selectively program-

ming ’0’s into the desired bit locations. Although

only ’0’s will be programmed, both ’1’s and ’0’s can

be present in the data word. The only way to

change a ’0’ to a ’1’ is by die exposition to ultravio-

let light (UV EPROM). The M27C160 is in the pro-

gramming mode when V input is at 12.5V, G is

PP

at V and E is pulsed to V . The data to be pro-

IH

IL

device between V

and V . This should be a

grammed is applied to 16 bits in parallel to the data

output pins. The levels required for the address

CC

SS

high frequency type of low inherent inductance

and should be placed as close as possible to the

device. In addition, a 4.7µF electrolytic capacitor

and data inputs are TTL. V

is specified to be

CC

6.25V ± 0.25V.

should be used between V

eight devices.

and V for every

CC

SS

5/16

M27C160

(1)

Table 8. Read Mode AC Characteristics

(T = 0 to 70 °C or –40 to 85 °C; V = 5V ± 5% or 5V ± 10%; V = V

)

A

CC

PP

CC

M27C160

-100

(3)

Symbol

Alt

Parameter

Test Condition

-90

-120/-150 Unit

-70

Min Max Min Max Min Max Min Max

Address Valid to

Output Valid

t

E = V , G = V

70

35

30

25

90

45

30

100

50

120

60

ns

AVQV

ACC

IL

BYTE High to

Output Valid

t

E = V , G = V

BHQV

ST

IL

Chip Enable Low to

Output Valid

t

G = V

ELQV

CE

IL

Output Enable Low

to Output Valid

t

E = V

GLQV

OE

IL

BYTE Low to Output

Hi-Z

(2)

t

E = V , G = V

40

50

t

STD

IL

BLQZ

Chip Enable High to

Output Hi-Z

(2)

t

DF

G = V

0

5

0

5

0

5

40

0

5

50

t

IL

EHQZ

Output Enable High

to OutputHi-Z

(2)

t

DF

E = V

40

50

t

IL

GHQZ

Address Transition

to Output Transition

t

E = V , G = V

AXQX

OH

IL

BYTE Low to

Output Transition

t

E = V , G = V

5

BLQX

OH

IL

Note: 1. V must be applied simultaneously with or before V and removed simultaneously or after V

CC

PP

2. Sampled only, not 100% tested.

3. Speed obtained with High Speed Measurement Conditions and V = 5V ± 5%.

CC

Figure 5. Word-Wide Read Mode AC Waveforms

VALID

A0-A19

tAVQV

tAXQX

E

tEHQZ

tGHQZ

tGLQV

G

tELQV

Hi-Z

Q0-Q15

AI00741B

Note: BYTEV = V

PP

.

IH

6/16

M27C160

Figure 6. Byte-Wide Read Mode AC Waveforms

VALID

tAVQV

VALID

A–1,A0-A19

E

tAXQX

tEHQZ

tGHQZ

tGLQV

G

tELQV

Hi-Z

Q0-Q7

AI00742B

Note: BYTEV = V .

PP

IL

Figure 7. BYTE Transition AC Waveforms

A0-A19

VALID

A–1

VALID

tAVQV

tAXQX

BYTEV

PP

tBHQV

Q0-Q7

tBLQX

Q8-Q15

tBLQZ

DATA OUT

Hi-Z

DATA OUT

AI00743C

Note: Chip Enable (E) and Output Enable (G) = V .

IL

7/16

M27C160

(1)

Table 9. Programming Mode DC Characteristics

(T = 25 °C; V = 6.25V ± 0.25V; V = 12.5V ± 0.25V)

A

CC

PP

Symbol

Parameter

Test Condition

Min

Max

±1

Unit

µA

mA

V

I

0 ≤ V ≤ V

Input Leakage Current

Supply Current

LI

IN

CC

I

50

CC

I

E = V

Program Current

Input Low Voltage

Input High Voltage

Output Low Voltage

Output High Voltage TTL

A9 Voltage

50

PP

IL

V

–0.3

2.4

0.8

IL

V

+ 0.5

CC

V

IH

I

= 2.1mA

OL

0.4

V

OL

V

OH

I

= –2.5mA

OH

3.5

V

11.5

12.5

V

ID

Note: 1. V must be applied simultaneously with or before V and removed simultaneously or after V .

PP

CC

PP

(1)

Table 10. Programming Mode AC Characteristics

(T = 25 °C; V = 6.25V ± 0.25V; V = 12.5V ± 0.25V)

A

CC

PP

Symbol

Alt

Parameter

Test Condition

Min

Max

Unit

t

Address Valid to Chip Enable Low

Input Valid to Chip Enable Low

2

µs

ns

AVEL

AS

t

QVEL

DS

t

V

High to Address Valid

2

VPHAV

VPS

VCS

PP

CC

t

2

VCHAV

t

Chip Enable Program Pulse Width

Chip Enable High to Input Transition

Input Transition to Output Enable Low

Output Enable Low to Output Valid

45

2

55

ELEH

PW

t

EHQX

DH

OES

t

2

QXGL

GLQV

t

120

130

OE

(2)

t

Output Enable High to Output Hi-Z

0

ns

t

DFP

GHQZ

Output Enable High to Address

Transition

t

GHAX

AH

Note: 1. V must be applied simultaneously with or before V and removed simultaneously or after V .

PP

CC

PP

2. Sampled only, not 100% tested.

8/16

M27C160

Figure 8. Programming and Verify Modes AC Waveforms

A0-A19

Q0-Q15

BYTEV

VALID

tAVEL

DATA IN

tQVEL

DATA OUT

tEHQX

PP

tVPHAV

tVCHAV

tGLQV

tGHQZ

V

E

CC

tGHAX

tELEH

tQXGL

G

PROGRAM

VERIFY

AI00744

Figure 9. Programming Flowchart

PRESTO III Programming Algorithm

The PRESTO III Programming Algorithm allows

the whole array to be programed with a guaran-

teed margin in a typical time of 52.5 seconds. Pro-

gramming with PRESTO III consists of applying a

sequence of 50µs program pulses to each word

until a correct verify occurs (see Figure 9). During

programing and verify operation a MARGIN

MODE circuit is automatically activated to guaran-

tee that each cell is programed with enough mar-

gin. No overprogram pulse is applied since the

verify in MARGIN MODE provides the neccessary

margin to each programmed cell.

V

= 6.25V, V = 12.5V

PP

CC

n = 0

E = 50µs Pulse

NO

++n

= 25

Program Inhibit

VERIFY

YES

++ Addr

Programming of multiple M27C160s in parallel

with different data is also easily accomplished. Ex-

cept for E, all like inputs including G of the parallel

M27C160 may be common. A TTL low level pulse

YES

Last

NO

FAIL

Addr

applied to a M27C160’s E input and V at 12.5V,

PP

will program that M27C160. A high level Einput in-

hibits the other M27C160s from being pro-

grammed.

YES

CHECK ALL WORDS

Program Verify

BYTEV

1st: V

=V

= 6V

= 4.2V

PP IH

CC

A verify (read) should be performed on the pro-

grammed bits to determine that they were correct-

ly programmed. The verify is accomplished with E

2nd: V

CC

AI01044B

at V and G at V , V

at 12.5V and V

at

IH

IL

PP

CC

6.25V.

9/16

M27C160

On-Board Programming

ERASURE OPERATION (applies to UV EPROM)

The M27C160 can be directly programmed in the

application circuit. See the relevant Application

Note AN620.

The erasure characteristics of the M27C160 is

such that erasure begins when the cells are ex-

posed to light with wavelengths shorter than ap-

proximately 4000 Å. It should be noted that

sunlight and some type of fluorescent lamps have

wavelengths in the 3000-4000 Å range. Research

shows that constant exposure to room level fluo-

rescent lighting could erase a typical M27C160 in

about 3 years, while it would take approximately 1

week to cause erasure when exposed to direct

sunlight. If the M27C160 is to be exposed to these

types of lighting conditions for extended periods of

time, it is suggested that opaque labels be put over

the M27C160 window to prevent unintentional era-

sure. The recommended erasure procedure for

M27C160 is exposure to short wave ultraviolet

light which has a wavelength of 2537 Å. The inte-

grated dose (i.e. UV intensity x exposure time) for

Electronic Signature

The Electronic Signature (ES) mode allows the

reading out of a binary code from an EPROM that

will identify its manufacturer and type. This mode

is intended for use by programming equipment to

automatically match the device to be programmed

with its corresponding programming algorithm.

The ES mode is functional in the 25°C ± 5°C am-

bient temperature range that is required when pro-

gramming the M27C160. To activate the ES

mode, the programming equipment must force

11.5V to 12.5V on address line A9 of the

M27C160, with V =V =5V. Two identifier bytes

PP

CC

may then be sequenced from the device outputs

by toggling address line A0 from V to V . All oth-

2.

IL

IH

erasure should be a minimum of 30 W-sec/cm

er address lines must be held at V during Elec-

IL

The erasure time with this dosage is approximate-

ly 30 to 40 minutes using an ultraviolet lamp with

tronic Signature mode.

2

Byte 0 (A0=V ) represents the manufacturer code

IL

12000 µW/cm power rating. The M27C160

and byte 1 (A0=V ) the device identifier code. For

IH

should be placed within 2.5cm (1 inch) of the lamp

tubes during the erasure. Some lamps have a filter

on their tubes which should be removed before

erasure.

the STMicroelectronics M27C160, these two iden-

tifier bytes are given in Table 4 and can be read-

out on outputs Q0 to Q7.

10/16

M27C160

Table 11. Ordering Information Scheme

Example:

M27C160

-70

X

M

1

TR

Device Type

Speed

(1,2)

-70

= 70 ns

-90 = 90 ns

-100 = 100 ns

-120 = 120 ns

-150 = 150 ns

V

Tolerance

CC

blank = ± 10%

X = ± 5%

Package

F = FDIP42W

B = PDIP42

(3)

K = PLCC44

M = SO44

Temperature Range

1 = –0 to 70 °C

6 = –40 to 85 °C

Options

TR =Tape & Reel Packing

Note: 1. High Speed, see AC Characteristics section for further information.

2. This speed is guaranteed at V = 5V ± 5%.

CC

3. The M27C160 product in PLCC44 package version is offered in the Temperature Range 0 to 70 °C only.

For a list of available options (Speed, Package, etc...) or for further information on any aspect of this de-

vice, please contact the ST Sales Office nearest to you.

11/16

M27C160

Table 12. FDIP42W - 42 pin Ceramic Frit-seal DIP, with window, Package Mechanical Data

mm

inches

Symb

Typ

Min

Max

5.72

1.40

4.57

4.50

0.56

–

Typ

Min

Max

0.225

0.055

0.180

0.177

0.022

–

A

A1

A2

A3

B

0.51

3.91

3.89

0.41

–

0.020

0.154

0.153

0.016

–

B1

C

1.45

0.057

0.23

54.41

–

0.30

54.86

–

0.009

2.142

–

0.012

2.160

–

D

D2

E

50.80

15.24

2.000

0.600

–

E1

e

14.50

–

14.90

–

0.571

–

0.587

–

2.54

0.100

0.590

eA

eB

L

14.99

–

16.18

3.18

1.52

–

18.03

0.637

0.125

0.060

–

0.710

S

2.49

–

0.098

–

K

9.40

0.370

0.450

K1

α

11.43

–

4°

11°

4°

11°

N

42

Figure 10. FDIP42W - 42 pin Ceramic Frit-seal DIP, with window, Package Outline

A2

A3

A

L

A1

e1

α

B1

B

C

eA

eB

D2

D

S

N

1

K

E1

E

K1

FDIPW-b

Drawing is not to scale.

12/16

M27C160

Table 13. PDIP42 - 42 pin Plastic Dual In Line, 600 mils width, Package Mechanical Data

mm

Min

–

inches

Min

–

Symb

Typ

Max

5.08

–

Typ

Max

0.200

–

A

A1

A2

B

0.25

3.56

0.38

1.27

0.20

52.20

–

0.010

0.140

0.015

0.050

0.008

2.055

–

4.06

0.53

1.65

0.36

52.71

–

0.160

0.021

0.065

0.014

2.075

–

B1

C

D

D2

E

50.80

15.24

2.000

0.600

–

E1

e1

eA

eB

L

13.59

–

13.84

–

0.535

–

0.545

–

2.54

0.100

0.590

14.99

–

15.24

3.18

0.86

0°

17.78

3.43

1.37

10°

0.600

0.125

0.034

0°

0.700

0.135

0.054

10°

S

α

N

42

Figure 11. PDIP42 - 42 pin Plastic Dual In Line, 600 mils width, Package Outline

A2

A

L

A1

e1

α

C

B1

B

eA

eB

D2

D

S

N

1

E1

E

PDIP

Drawing is not to scale.

13/16

M27C160

Table 14. PLCC44 - 44 lead Plastic Leaded Chip Carrier, square, Package Mechanical Data

mm

inches

Min

Symb

Typ

Min

4.20

2.29

–

Max

4.70

3.04

0.51

0.53

0.81

17.65

16.66

16.00

17.65

16.66

16.00

–

Typ

Max

0.185

0.120

0.020

0.021

0.032

0.695

0.656

0.630

0.695

0.656

0.630

–

A

A1

A2

B

0.165

0.090

–

0.33

0.66

17.40

16.51

14.99

17.40

16.51

14.99

–

0.013

0.026

0.685

0.650

0.590

0.685

0.650

0.590

–

B1

D

D1

D2

E

E1

E2

e

1.27

0.89

0.050

0.035

F

0.00

–

0.25

–

0.000

–

0.010

–

R

N

44

CP

0.10

0.004

Figure 12. PLCC44 - , Package Outline

D

A1

D1

A2

1 N

B1

e

Ne

E1 E

D2/E2

F

B

0.51 (.020)

1.14 (.045)

Nd

A

R

CP

PLCC

Drawing is not to scale.

14/16

M27C160

Table 15. SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Mechanical Data

mm

Min

2.42

0.22

2.25

inches

Min

Symb

Typ

Max

2.62

0.23

2.35

0.50

0.25

28.30

13.40

–

Typ

Max

0.103

0.010

0.093

0.020

0.010

1.114

0.528

–

A

A1

A2

B

0.095

0.009

0.089

C

0.10

28.10

13.20

–

0.004

1.106

0.520

–

D

E

e

1.27

0.050

H

15.90

–

16.10

–

0.626

–

0.634

–

L

0.80

0.031

α

3°

–

3°

–

N

44

CP

0.10

0.004

Figure 13. SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Outline

A2

A

C

B

CP

e

D

N

1

E

H

A1

α

L

SO-b

Drawing is not to scale.

15/16

M27C160

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject

to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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16/16


型号：	M27C160-70K1TR
厂家：	ST
描述：	16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM 16兆位的2Mb X8或X16的1Mb UV EPROM和OTP EPROM 存储内存集成电路可编程只读存储器 OTP只读存储器电动程控只读存储器
文件：	总16页 (文件大小：112K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

M27C160-70K1TR [STMICROELECTRONICS]

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