M25P40-VME6P [STMICROELECTRONICS]
512K X 8 FLASH 2.7V PROM, PDSO8, 8 X 6 MM, ROHS COMPLIANT, MLP-8;型号: | M25P40-VME6P |
厂家: | ST |
描述: | 512K X 8 FLASH 2.7V PROM, PDSO8, 8 X 6 MM, ROHS COMPLIANT, MLP-8 可编程只读存储器 光电二极管 |
文件: | 总7页 (文件大小:131K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
M25PXX
512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory
With 40 MHz or 50 MHz SPI Bus Interface
DATA BRIEF
FEATURES SUMMARY
■
512Kbit to 32Mbit of Flash Memory
Figure 1. Packages
■
Page Program (up to 256 Bytes) in 1.4ms
(typical)
■
■
■
■
■
■
■
Sector Erase (256 Kbit or 512Kbit)
Bulk Erase (512Kbit to 32Mbit)
2.7 to 3.6V Single Supply Voltage
SPI Bus Compatible Serial Interface
40MHz to 50MHz Clock Rate (maximum)
Deep Power-down Mode 1µA (typical)
Electronic Signatures
VDFPN8 (ME)
8x6mm (MLP8)
–
JEDEC Standard Two-Byte Signature
(20xxh)
–
RES Instruction, One-Byte, Signature, for
backward compatibility
VDFPN8 (MP)
(MLP8)
■
■
More than 100000 Erase/Program Cycles per
Sector
More than 20 Year Data Retention
Table 1. Product List
Reference
Part Number
M25P32
M25P16
M25P80
M25P40
M25P20
M25P10-A
M25P05-A
SO16 (MF)
300 mil width
M25Pxx
8
1
SO8 (MN)
150 mil width
October 2004
1/7
For further information contact your local ST sales office.
M25PXX
Figure 3. SO8 and VDFPN Connections
SUMMARY DESCRIPTION
The M25Pxx is a 512Kbit to 32Mbit (2M x 8) Serial
Flash Memory, with advanced write protection
mechanisms, accessed by a high speed SPI-com-
patible bus.
The memory can be programmed 1 to 256 bytes at
a time, using the Page Program instruction.
The memory is organized as a number of sectors,
each containing 256 or 128 pages. Each page is
256 bytes wide.
The whole memory can be erased using the Bulk
Erase instruction, or a sector at a time, using the
Sector Erase instruction.
M25Pxx
S
Q
1
2
3
4
8
V
CC
HOLD
7
6
W
C
D
V
5
SS
AI10259
Figure 2. Logic Diagram
V
CC
D
C
S
Q
Note: 1. There is an exposed die paddle on the underside of the
MLP8 package. This is pulled, internally, to V , and
SS
must not be allowed to be connected to any other voltage
or signal line on the PCB.
M25Pxx
Figure 4. SO16 Connections
W
M25Pxx
HOLD
HOLD
1
2
3
4
5
6
7
8
16
15
C
V
D
CC
DU
14
DU
DU
DU
DU
V
SS
AI10258
DU
DU
DU
S
13
12
11
10
V
SS
W
Table 2. Signal Names
Q
9
C
Serial Clock
Serial Data Input
Serial Data Output
Chip Select
Write Protect
Hold
AI10260
D
Note: 1. DU = Don’t Use
Q
S
W
HOLD
V
Supply Voltage
Ground
CC
V
SS
2/7
M25PXX
Figure 5. Block Diagram
HOLD
High Voltage
Generator
W
S
Control Logic
C
D
Q
I/O Shift Register
Status
Register
Address Register
and Counter
256 Byte
Data Buffer
Top of Address Space
Size of the
read-only
memory area
00000h
000FFh
256 Bytes (Page Size)
X Decoder
AI10261
3/7
M25PXX
Table 3. Instruction Set
Address
Bytes
Dummy
Bytes
Data
Bytes
Instruction
Description
One-byte Instruction Code
WREN
WRDI
RDID
Write Enable
0000 0110
0000 0100
1001 1111
0000 0101
0000 0001
0000 0011
0000 1011
0000 0010
1101 1000
1100 0111
1011 1001
06h
04h
9Fh
05h
01h
03h
0Bh
02h
D8h
C7h
B9h
0
0
0
0
0
3
3
3
3
0
0
0
0
0
0
0
0
1
0
0
0
0
0
Write Disable
0
1 to 3
1 to ∞
1
Read Identification
Read Status Register
Write Status Register
Read Data Bytes
RDSR
WRSR
READ
1 to ∞
1 to ∞
1 to 256
0
FAST_READ Read Data Bytes at Higher Speed
PP
SE
BE
DP
Page Program
Sector Erase
Bulk Erase
0
Deep Power-down
0
Release from Deep Power-down,
and Read Electronic Signature
0
0
3
0
1 to ∞
RES
1010 1011
ABh
Release from Deep Power-down
0
Table 4. Status Register Format
b7
b0
SRWD
0
0
BP2 BP1 BP0 WEL WIP
Status Register
Write Protect
Block Protect Bits
Write Enable Latch Bit
Write In Progress Bit
4/7
M25PXX
PART NUMBERING
Table 5. Ordering Information Scheme
Example:
M25P80
–
V
MP
6
T
P
Device Type
M25P = Serial Flash Memory for Code Storage
Device Function
32 = 32Mbit (4M x 8)
16 = 16Mbit (2M x 8)
80 = 8Mbit (1M x 8)
40 = 4Mbit (512K x 8)
20 = 2Mbit (256K x 8)
10-A = 1Mbit (128K x 8)
05-A = 512Kbit (64K x 8)
Operating Voltage
V = V = 2.7 to 3.6V
CC
Package
ME = VDFPN8 8x6mm (MLP8)
MP = VDFPN8 (MLP8)
MF = SO16 (300 mil width)
MN = SO8 (150 mil width)
Device Grade
6 = Industrial temperature range, –40 to 85 °C.
Device tested with standard test flow
1
3 = Device tested with High Reliability Certified Flow .
Automotive temperature range (–40 to 125 °C)
Option
blank = Standard Packing
T = Tape and Reel Packing
Plating Technology
blank = Standard SnPb plating
P = Lead-Free and RoHS compliant
G = Lead-Free, RoHS compliant, Sb O -free and TBBA-free
2
3
Note: 1. ST strongly recommends the use of the Automotive Grade devices for use in an automotive environment. The High Reliability Cer-
tified Flow (HRCF) is described in the quality note QNEE9801. Please ask your nearest ST sales office for a copy.
For a list of available options (speed, package,
etc.) or for further information on any aspect of this
device, please contact your nearest ST Sales Of-
fice.
5/7
M25PXX
REVISION HISTORY
Table 6. Document Revision History
Date
Rev.
Description of Revision
08-Oct-2004
1.0 First release
6/7
M25PXX
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2004 STMicroelectronics - All rights reserved
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7/7
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