LDP24AS [STMICROELECTRONICS]

UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, AG, 2 PIN;
LDP24AS
型号: LDP24AS
厂家: ST    ST
描述:

UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, AG, 2 PIN

文件: 总5页 (文件大小:47K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
®
LDP24A  
TRANSIENT PROTECTION  
LOAD DUMP  
FEATURES  
TRANSIENT VOLTAGE SUPPRESSOR  
DIODE ESPECIALLY DESIGNED FOR  
LOAD DUMP PROTECTION  
COMPLIANT WITH MAIN STANDARDS  
SUCH AS:  
ISO / DTR 7637  
DESCRIPTION  
Transient voltage suppressor diodes especially  
useful in protecting integrated circuits, MOS, hy-  
brids and other overvoltages sensitive semicon-  
ductors and components.  
AG  
(Plastic)  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Peak pulse load dump overvoltage  
Value  
Unit  
VPP  
Tamb = 85°C  
Tamb = 100°C  
100  
V
See note 1  
P
Power dissipation on infinite heatsink  
Non repetitive surge peak forward current.  
5
W
A
IFSM  
Tj initial = 25°C  
tp = 10 ms  
500  
Tstg  
Tj  
Storage temperature range.  
- 65 to + 175  
175  
°C  
°C  
°C  
Maximum operating temperature  
TL  
Maximum lead temperature for soldering  
during 10 sec at 4 mm from case.  
230  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
Rth (j-a)  
Junction ambient thermal resistance on infinite heatsink  
Llead = 10 mm  
15  
°C/W  
Note 1: For surges greater than the maximum values, the diode will present a short-circuit Anode - Cathode.  
April 2000 - Ed: 4B  
1/5  
LDP24A  
I
ELECTRICAL CHARACTERISTICS  
I
F
Symbol  
VRM  
VBR  
VCL  
IPP  
Parameter  
Stand-off voltage.  
V
V
CL  
BR  
Breakdown voltage.  
Clamping voltage.  
V
V
F
RM  
V
Peak pulse current.  
Temperature coefficient of VBR  
Capacitance  
I
I
RM  
αT  
C
.
IRM  
Leakage current at VRM  
VF  
Peak forward voltage drop (IFM = 10A)  
VF = 0.9 Volt Typ.  
PP  
Symbol  
Ipp  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Pulse duration: 300ms  
30  
A
IRM  
TL = 25°C  
TL = 85°C  
V
RM = 24 V  
50  
300  
µA  
µA  
VRM = 24 V  
VBR  
VCL  
αT  
C
TL = 25°C  
TL = 85°C  
IR = 1mA  
25  
32  
40  
10  
V
V
see table1  
10 -4/°C  
F = 1MHz  
VR = 0V  
8000  
pF  
LOAD DUMP TEST GENERATOR CIRCUIT (SCHAFFNER NSG 506 C). Issued from ISO / DTR 7637.  
Table 1  
Impulse  
Vs (V)  
N°5  
86.5  
13.5  
2
Open circuit (voltage curve)  
(Pulse test n°5)  
t
Vbat (V)  
Ri ()  
U(V)  
tr  
t (ms)  
200 (*)  
<10  
5
offset  
10% / 13.5V  
90%  
tr (ms)  
Number  
Vs  
10%  
60s between each pulse  
(*) Generator setting  
Vbat  
0
t
2/5  
LDP24A  
Fig. 1: Peak pulse power versus exponential pulse  
duration (Tj initial=85°C).  
Fig. 2 : Peak pulse current versus exponential  
pulse duration (Tj initial=85°C).  
Ppp(kW)  
Ipp(A)  
10.0  
200  
5.0  
100  
50  
2.0  
1.0  
0.5  
20  
0.2  
tp(ms)  
tp(ms)  
0.1  
10  
1
2
5
10  
20  
50  
100  
1
2
5
10  
20  
50  
100  
Fig. 3: Relative variation of peak pulse power versus  
junction temperature.  
Fig. 4: Continous power dissipation versus ambient  
temperature.  
P(W)  
Ppp[Tj] / Ppp [Tj initial=85°C]  
6
1.2  
Rth(j-a)=Rth(j-l)  
5
1.0  
0.8  
0.6  
0.4  
4
3
Rth(j-a)=50°C/W  
2
0.2  
1
Tj (°C)  
Tamb(°C)  
0.0  
0
0
25  
50  
75  
100 125 150 175 200  
0
25  
50  
75  
100  
125  
150  
175  
Fig. 5: Variation of thermal impedance junction to  
ambient versus pulse duration (printed circuit  
board FR4, e(Cu)=35µm, SCu=1cm2).  
Fig. 6 : Peak forward voltage drop versus peak  
forward current (typical values).  
IFM(A)  
Zth(j-a)(°C/W)  
200  
100.0  
Lleads=10mm  
100  
Tj=125°C  
10.0  
1.0  
Tj=25°C  
10  
tp(s)  
VFM(V)  
0.1  
1
1E-2  
1E-1  
1E+0  
1E+1  
1E+2  
1E+3  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0  
3/5  
LDP24A  
Fig. 8: Junction capacitance versus reverse applied  
voltage.  
Fig. 7: Non repetitive surge peak forward current  
versus sinusoidal pulse duration and correspond-  
ing value of I2t.  
C(nF)  
IFSM(A) , I²t(A²s)  
10  
5000  
F=1MHz  
Vosc=30mV  
Tj initial=25°C  
I²t  
2000  
5
1000  
500  
IFSM  
2
200  
VR(V)  
tp(ms)  
1
100  
1
2
5
10  
20  
50  
10  
20  
50  
100  
ORDER CODE  
LDP 24 A  
AG Case  
Load Dump Protection  
Stand Off Voltage  
4/5  
LDP24A  
PACKAGE MECHANICAL DATA  
AG (Plastic)  
B
A
B
O
/
C
note 1  
note 1  
L1  
L1  
O/  
O
/
D
D
note 2  
DIMENSIONS  
Millimeters Inches  
Min. Max. Min. Max.  
REF.  
NOTES  
1- The lead is not controlled within zone L1.  
2- The minimum axial length within which the device may be  
placed bent at right angles is 0.79" (20 mm).  
A
B
9
0.354  
20  
0.787  
0.053  
C
8
0.315  
0.057  
0.050  
D
1.35  
1.45  
1.27  
L1  
Type  
Marking  
LDP24A  
LDP24A  
Package  
AG  
Weight  
2.16g  
Base qty  
100  
Delivery mode  
Ammopack  
LDP24A  
LDP24ARL  
AG  
2.16g  
1000  
Tape & Reel  
Resin meets UL94-V0  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-  
proval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 2000 STMicroelectronics - Printed in Italy - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia  
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
5/5  

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