IRF630_06 [STMICROELECTRONICS]
N-channel 200V - 0.35ヘ - 9A TO-220/TO-220FP Mesh overlay⑩ II Power MOSFET; N沟道200V - 0.35ヘ - 9A TO- 220 / TO- 220FP网overlay⑩ II功率MOSFET
| 型号： | IRF630_06 |
| 厂家： | 
ST |
| 描述： | N-channel 200V - 0.35ヘ - 9A TO-220/TO-220FP Mesh overlay⑩ II Power MOSFET |
| 文件： | 总14页 (文件大小：337K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF630
IRF630FP
N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP
Mesh overlay™ II Power MOSFET
General features
Type
VDSS
RDS(on)
ID
IRF630
200V
200V
<0.40Ω
<0.40Ω
9A
9A
IRF630FP
■ Extremely high dv/dt capability
■ Very low intrinsic capacitances
■ Gate charge minimized
3
3
2
2
1
1
TO-220
TO-220FP
Description
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number
Marking
Package
Packaging
IRF630
IRF630
TO-220
Tube
Tube
IRF630FP
IRF630FP
TO-220FP
August 2006
Rev 9
1/14
www.st.com
14
Contents
IRF630 - IRF630FP
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
IRF630 - IRF630FP
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
TO-220
TO-220FP
VDS
VDGR
VGS
ID
Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
200
200
20
V
V
V
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC=100°C
Drain current (pulsed)
9
9(1)
5.7(1)
36(1)
30
A
A
ID
5.7
36
75
0.6
(2)
IDM
A
PTOT
Total dissipation at TC = 25°C
Derating factor
W
0.24
W/°C
V/ns
V
dv/dt (3)
VISO
Peak diode recovery voltage slope
Insulation winthstand voltage (DC)
5
--
2000
TJ
Operating junction temperature
Storage temperature
-65 to 150
150
°C
Tstg
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤9A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
Table 2.
Symbol
Thermal data
Value
Parameter
Unit
TO-220
1.67
TO-220FP
Rthj-case
Rthj-a
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
4.17
°C/W
°C/W
°C/W
62.5
0.5
Rthc-sink Thermal resistance case-sink typ
Maximum lead temperature for soldering
purpose
Tl
300
°C
Table 3.
Avalanche characteristics
Parameter
Symbol
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
IAR
9
A
Single pulse avalanche energy
EAS
160
mJ
(starting Tj=25°C, Id=Iar, Vdd=50V)
3/14
Electrical characteristics
IRF630 - IRF630FP
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ. Max. Unit
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
V(BR)DSS
200
V
V
DS = Max rating,
1
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
VDS = Max rating @125°C
50
Gate body leakage current
(VDS = 0)
VGS = 20V
IGSS
100
nA
VDS= VGS, ID = 250µA
VGS= 10V, ID= 4.5A
VGS(th) Gate threshold voltage
2
3
4
V
Static drain-source on
RDS(on)
0.35
0.40
Ω
resistance
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
V
DS > ID(on) x RDS(on)max,
(1)
gfs
Forward transconductance
3
4
S
ID = 4.5A
Input capacitance
Ciss
Coss
Crss
540 700
pF
pF
pF
Output capacitance
VDS =25V, f=1 MHz, VGS=0
90
35
120
50
Reverse transfer
capacitance
V
DD = 100V, ID = 4.5A,
td(on)
tr
Turn-on Delay Time
Rise Time
10
15
14
20
ns
ns
RG = 4.7Ω, VGS = 10V
(see Figure 14)
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
31
7.5
9
45
nC
nC
nC
VDD=160V, ID = 9A
VGS =10V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
4/14
IRF630 - IRF630FP
Electrical characteristics
Min Typ. Max Unit
Table 6.
Symbol
Source drain diode
Parameter
Test conditions
ISD
Source-drain current
9
A
A
V
(1)
Source-drain current (pulsed)
Forward on voltage
36
1.5
ISDM
(2)
ISD=9A, VGS=0
VSD
ISD=9A,
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
170
0.95
11
ns
µC
A
di/dt = 100A/µs,
Qrr
VDD=50V, Tj=150°C
IRRM
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/14
Electrical characteristics
IRF630 - IRF630FP
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area for TO-220
Figure 2. Thermal impedance for TO-220
Figure 3.
Safe operating area for TO-220/FP Figure 4.
Thermal impedance for TO-220/FP
Figure 5.
Output characterisics
Figure 6.
Transfer characteristics
6/14
IRF630 - IRF630FP
Electrical characteristics
Figure 7. Transconductance
Figure 8. Static drain-source on resistance
Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage Figure 12. Normalized on resistance vs
vs temperature temperature
7/14
Electrical characteristics
IRF630 - IRF630FP
Figure 13. Source-drain diode forward
characteristics
8/14
IRF630 - IRF630FP
Test circuit
3
Test circuit
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
switching and diode recovery times
Figure 17. Unclamped Inductive load test
circuit
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
9/14
Package mechanical data
IRF630 - IRF630FP
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/14
IRF630 - IRF630FP
Package mechanical data
TO-220 MECHANICAL DATA
mm.
inch
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
TYP
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
TYP.
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
11/14
Package mechanical data
IRF630 - IRF630FP
TO-220FP MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.4
TYP
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1
2 3
L5
L2
L4
12/14
IRF630 - IRF630FP
Revision history
5
Revision history
Table 7.
Date
Revision history
Revision
Changes
09-Sep-2004
03-Aug-2006
8
9
Complete version
New template, no content change
13/14
IRF630 - IRF630FP
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2006 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
14/14
相关型号：
IRF631
Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
SAMSUNG
IRF631-001
Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRF631-001PBF
Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRF631-002
Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRF631-003
Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRF631-004
Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRF631-005
Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRF631-006PBF
Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
©2020 ICPDF网 联系我们和版权申明