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D44H11 [STMICROELECTRONICS]

NPN SILICON POWER TRANSISTORS; NPN硅功率晶体管
D44H11
型号： D44H11
厂家： ST    ST
描述：

NPN SILICON POWER TRANSISTORS
NPN硅功率晶体管

晶体 晶体管 功率双极晶体管 开关 局域网
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中文：  中文翻译
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D44H8  
D44H11  
NPN SILICON POWER TRANSISTORS  
■
■
SGS-THOMSON PREFERRED SALESTYPES  
LOW COLLECTOR-EMITTER SATURATION  
VOLTAGE  
■
FAST SWITCHING SPEED  
APPLICATIONS  
■
GENERAL PURPOSE SWITCHING  
GENERAL PURPOSE AMPLIFIER  
■
3
2
DESCRIPTION  
1
The D44H8, and D44H11 are silicon  
multiepitaxial planar NPN transistors mounted in  
Jedec TO-220 plastic package.  
TO-220  
They are inteded for various switching and  
general purpose applications.  
D44H8, D44H11 are complementary with D45H8,  
D45H11.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
D44H8  
D44H11  
VCEO  
VEBO  
IC  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
60  
80  
V
V
5
10  
A
ICM  
Ptot  
Tstg  
Tj  
Collector Peak Current  
Total Dissipation at Tc ≤ 25 oC  
20  
A
50  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/5  
June 1997  
D44H8/D44H11  
THERMAL DATA  
Rthj-case Thermal Resistance Junction-case  
Max  
2.5  
oC/W  
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
VCB = rated VCEO  
Min.  
Typ.  
Max.  
Unit  
ICBO  
Collector Cut-off  
Current (IE = 0)  
10  
µA  
IEBO  
Emitter Cut-off Current VEB = 5V  
(IC = 0)  
100  
µA  
VCEO(sus) Collector-Emitter  
Sustaining Voltage  
IC = 100 mA  
for D44H8  
for D44H11  
60  
80  
V
V
VCE(sat)  
VBE(sat)  
hFE  
Collector-Emitter  
Saturation Voltage  
IC = 8 A  
IB = 0.4 A  
IB = 0.8 A  
1
V
Base-Emitter  
Saturation Voltage  
IC = 8 A  
1.5  
V
DC Current Gain  
IC = 2 A  
IC = 4 A  
VCE = 1 V  
VCE = 1 V  
60  
40  
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %  
Safe Operating Area  
Derating Curves  
2/5  
D44H8/D44H11  
DC Current Gain  
DC Current Gain  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
3/5  
D44H8/D44H11  
TO-220 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.40  
1.23  
2.40  
TYP.  
MAX.  
4.60  
1.32  
2.72  
MIN.  
0.173  
0.048  
0.094  
MAX.  
0.181  
0.051  
0.107  
A
C
D
D1  
E
1.27  
0.050  
0.49  
0.61  
1.14  
1.14  
4.95  
2.4  
0.70  
0.88  
1.70  
1.70  
5.15  
2.7  
0.019  
0.024  
0.044  
0.044  
0.194  
0.094  
0.393  
0.027  
0.034  
0.067  
0.067  
0.203  
0.106  
0.409  
F
F1  
F2  
G
G1  
H2  
L2  
L4  
L5  
L6  
L7  
L9  
DIA.  
10.0  
10.40  
16.4  
0.645  
13.0  
2.65  
15.25  
6.2  
14.0  
2.95  
15.75  
6.6  
0.511  
0.104  
0.600  
0.244  
0.137  
0.147  
0.551  
0.116  
0.620  
0.260  
0.154  
0.151  
3.5  
3.93  
3.85  
3.75  
L2  
Dia.  
L5  
L9  
L7  
L6  
L4  
P011C  
4/5  
D44H8/D44H11  
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the  
consequencesof use of such information nor for any infringementof patents or other rights of third parties which may results from its use. No  
license is granted by implication or otherwise under anypatent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned  
in this publication are subject to change without notice. This publicationsupersedes and replaces all information previously supplied.  
SGS-THOMSON Microelectronicsproducts are notauthorized for useas critical components inlife support devices or systems without express  
written approvalof SGS-THOMSON Microelectonics.  
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved  
SGS-THOMSON Microelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada- China- France - Germany - Hong Kong - Italy - Japan- Korea - Malaysia - Malta - Morocco - The Netherlands -  
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A  
. . .  
5/5  

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