CLP30-200B1 [STMICROELECTRONICS]
OVERVOLTAGE & OVERCURRENT PROTECTION FOR TELECOM LINE; 过压和过流保护电信线路
| 型号： | CLP30-200B1 |
| 厂家： | 
ST |
| 描述： | OVERVOLTAGE & OVERCURRENT PROTECTION FOR TELECOM LINE |
| 文件： | 总11页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CLP30-200B1
®
Application Specific Discretes
A.S.D™
OVERVOLTAGE & OVERCURRENT
PROTECTION FOR TELECOM LINE
MAIN APPLICATIONS
Any telecom equipment submitted to transient
overvoltages and lightning strikes such as :
■
Analog and ISDN line cards
PABX
■
DESCRIPTION
The CLP30-200B1 is designed to protect
telecommunication equipment. It provides both a
transient overvoltage protection and an
overcurrent protection.
SO8
The external components (balanced resistors, ring
relays contact, ...) needed by the CLP30-200B1
protection concept require very low power rating.
This results in a very cost effective protection
solution.
SCHEMATIC DIAGRAM (Top view)
FEATURES
■
Dual bidirectional protection device.
■
High peak pulse current :
IPP = 40A (5/310 µs SURGE)
IPP = 30A (10/1000 µs SURGE)
TIPL
TIPS
1
■
■
Max. voltage at switching-on : 290V
Min. current at switching-off : 150mA
GND
GND
GND
GND
BENEFITS
RINGL
RINGS
■
■
■
Voltage and current controlled suppression.
Surface Mounting with SO8 package.
Very low power rating of external components
on line card : balanced resistors, ring relay, low
voltage SLIC protection.
1/11
July 1999 - Ed: 4
CLP30-200B1
Standard
Minimum
serial resistor to
meet
Peak surge
voltage
Voltage
Current
Required peak
current (A)
waveform
waveform
(V)
standard ( )
2500
1000
2/10µs
10/100µs
500
100
2/10 µs
20
25
Bellcore TR-NWT-1089
First level
10/1000 µs
5000
2/10 µs
500
2/10 µs
40
Bellcore TR-NWT-1089
Second level
4000
1000
10/700 µs
100
25
5/310 µs
50
0
ITU-T-K20 / K21
6000
8000
1/60 ns
10/700 µs
1.2/50 µs
ESD contact discharge
ESD air discharge
0
0
ITU-T-K20
(IEC61000-4-2)
4000
2000
100
50
5/310 µs
50
5
VDE0433
4000
2000
100
50
1/20 µs
22
0
VDE0878
4000
2000
4000
10/700 µs
1.2/50 µs
1.2/50 µs
100
50
100
5/310 µs
8/20 µs
8/20 µs
50
0
22
IEC61000-4-5
1500
800
10/160 µs
10/560 µs
200
100
10/160 µs
10/560 µs
17.5
12
FCC Part 68, lightning
surge type A
1000
9/720 µs
25
5/320 µs
0
FCC Part 68, lightning
surge type B
BLOCK DIAGRAM
TIPL
TIPS
Overcurrent
detector
Overvoltage
reference
(> 200 V)
Overvoltage
detector
OR
SW1
GND
SW2
Overvoltage
reference
(> 200 V)
Overvoltage
detector
OR
Overcurrent
detector
RINGL
RINGS
2/11
CLP30-200B1
Pin
Symbol
TIPL
Description
1
TIP (Line side)
Ground
2 / 3 / 6 / 7
GND
4
5
8
RINGL
RINGS
TIPS
RING (Line side)
RING (SLIC side)
TIP (SLIC side)
APPLICATION NOTE
1.INTRODUCTION
2. STMicroelectronics CLP30-200B1 CONCEPT
2.1 Evolution of the SLIC protection
The aim of this section is to show the behavior of
our new telecom line protection device.
Over the years, the performances of the SLICs
considerably increased and therefore the need of
the protection has also evolved.
Fig.1 : Suscriber line protection topology
The CLP30-200B1 is especially designed for the
protection of this new generation of SLIC. For this,
it is based on both overvoltage and overcurrent
protection modes.
"PRIMARY PROTECTION"
"SECONDARY PROTECTION"
telecommunication
line
VOLTAGE
CLP30-
200B1
SLIC
REFERENCE
Fig.2 : Line card protection
MDF
LINE CARD
EXCHANGE
I
Programmable thanks to
an external resistor
+ I
SWON
Programmable thanks to
Figure 1 is a simplified block diagram of a
subscriber line protection that is mainly used so
far.
any external voltage reference
- V
SWON
V
+ V
SWON
This shows two different things :
- I
SWON
■
A “primary protection” located on the Main Dis-
tribution Frame (MDF) eliminates coarsely the
high energy environmental disturbances (light-
ning transients and AC power mains distur-
bances) for which the ITU-T-K20 requires a 4kV
10/700 µs test. This can be assumed either by
gas-tubes or silicon protection such as the
TLPxxM.
Line Card operating conditions
The figure 2 summarises the performance of the
CLP30-200B1 which basically holds the SLIC
inside its correct voltage and current values.
■
A “secondary protection” located on the line
card eliminates finely the remaining transients
that have not been totally suppressed by the
first stage. The ITU-T-K20 requires a 1 kV
10/700 µs test. At this stage, the protection is
managed by the CLP30-200B1.
3/11
CLP30-200B1
APPLICATION CIRCUIT : CLP30-200B1 in line card
Fig.3 : CLP30-200B1 in line card
I
PTC
TIP
R sense
R
-Vbat
1
TIPL
TIPS
Rp
TIP
Overcurrent
detector
2
-Vbat
Overvoltage
detector
Overvoltage
reference
(> 200 V)
External
voltage
reference
OR
SLIC
SW1
SW2
1
GND
Overvoltage
detector
Overvoltage
reference
(> 200 V)
OR
Rp
RING
2
Overcurrent
detector
Ring
RINGL
RINGS
Generator
PTC
R sense
RING
R
Figure above shows the topology of a protected
analog subscriber line at the line card side.
■
A first stage based on CLP30-200B1 manages
the high power issued from the external surges.
When used in ringing mode, the CLP30-200B1
operates in voltage mode and provides a
symmetrical and bidirectional overvoltage
protection above 200 V on both TIP and RING
lines. When used in speech mode, the
CLP30-200B1 operates in current mode and
the activation current of the CLP30-200B1 is
adjusted by RSENSE
.
■
A second stage which is the external voltage
reference device defines the firing threshold
voltage during the speech mode and also
assumes a residual power overvoltage
suppression. This stage can be either a fixed or
programmable device such as LCP1511D.
4/11
CLP30-200B1
2.3 Ringing mode
Fig.4 : Switching by voltage during ringing mode.
ILG
ILG
R sense
TIP
A1
1
TIPL
TIPS
1/2 CLP200M
2
Overcurrent
detector
1
2
-200
VLG
VLG
Overvoltage
detector
Overvoltage
reference
(>200V)
+200
1
OR
SW1
3
GND
In ringing mode (Ring relay in position 2), the only
protection device involved is the CLP30-200B1.
For surges occurring between TIP and RING, the
CLP30-200B1 acts in the same way. This means
that the CLP30-200B1 ensures
protection.
a
tripolar
In normal conditions, the CLP30-200B1 operates
in region 1 of A1 curve, and is idle.
If an overvoltage occurring between TIP (or RING)
and GND reaches the internal overvoltage
reference (+/- 200V), the CLP30-200B1 acts and
the line is short-circuited to GND. At this time the
operating point moves to region 2 for positive
surges (region 3 for negative surges). Once the
surge current disappears, the device returns to its
initial state (region 1).
When used alone, the CLP30-200B1 acts at the
internal overvoltage reference level (+/- 200 V).
Furthermore, it is possible to adjust this threshold
level to a lower voltage by using up to 4 fixed
external voltage reference (VZ1 to VZ4) (see fig.5).
Fig.5 : Methode to adjust the reference voltage.
1
TIP
R sense
TIPL
TIPS
2
VZ1
Overcurrent
detector
VZ2
Overvoltage
detector
Overvoltage
reference
(>200V)
OR
SW1
SW2
GND
Overvoltage
detector
Overvoltage
reference
(>200V)
VZ3
OR
Overcurrent
detector
VZ4
RINGL
RINGS
1
RING
R sense
2
5/11
CLP30-200B1
2.4 Speech mode
Fig.6 : Switching by current during speech mode.
ILG
ILG
TIP
R sense
1
TIPL
TIPS
Rp
6
-Vbat
Overcurrent
detector
4
2
-VBAT
External
voltage
VLG
Overvoltage
detector
Overvoltage
reference
(>200V)
reference
VLG
OR
SW1
5
GND
In speech mode (Ring relay in position 1), the
protection is provided by the combination of both
CLP30-200B1 and the external voltage reference
device (for example LCP1511D).
Once the surge current falls below the
switching-off current ISWOFF, the CLP30-200B1
returns to its initial state (region 4).
In normal conditions, the working point of this
circuit is located in region 4 of A2 curve :
the CLP30-200B1 is idle.
Furthermore, the CLP30-200B1 switches when an
overvoltage, either positive or negative, occurs
either :
When a surge occurs on the line, the external
voltage reference device clamps at GND or -Vbat
respectively for positive and negative surges. This
generates a current which is detected by RSENSE
and causes the protection to act : the line is
short-circuited to GND. The operating point moves
to region 6 for positive surges or region 5 for
negative surges.
■
simultaneously on both TIP and RING lines
versus GND.
■
■
between TIP and RING.
on TIP (or RING) versus GND.
6/11
CLP30-200B1
The choice of the switching-on current is function of the RSENSE resistors.
Fig . 7a and 7b : Switching-on current versus RSENSE
Iswon negative surge ( mA )
1000
Iswon @ 25°C ( mA )
1000
Iswon + min Iswon + max Iswon - min Iswon - max
Iswon - @ 0°C Iswon - @ +25°C Iswon - @ +70°C
Rsense ( Ohms )
Rsense ( Ohms )
100
100
1.6
3
6
1.6
3
6
This current (typically above 150 mA) should not activate the protection device CLP30-200B1.
Therefore the level of activation is to be chosen just below this limit (typically 200mA). This level is adjusted
through RSENSE
.
Figures 7a and 7b enable the designers to choose the right RSENSE value.
Example: The choice of RSENSE = 3 Ω ensures a negative triggering of -280 mA min and -380mA max.
In this case, the positive triggering will be 220mA min and 320mA max.
Thanks to the CLP30-200B1 topology, the surge current in the line is reduced after it.
Because the remaining surge energy is low, the power ratings of RP, the relay contacts and the external
voltage reference device may be kept low. This results in a significant cost reduction for the whole system.
7/11
CLP30-200B1
ABSOLUTE MAXIMUM RATINGS (RSENSE = 3 Ω,Tamb = 25°C)
Symbol
Parameter
Line to GND peak pulse current
10/1000 µs (open circuit voltage wave shape 10/1000 µs)
5/310 µs (open circuit voltage wave shape 10/700 µs)
Value
Unit
A
IPP
30
45
ITSM
Non repetitive surge peak on-state current
F = 50 Hz
tp = 10 ms
tp = 200 ms
tp = 1 s
8.5
4.5
3.5
A
Tstg
Tj
Storage temperature range
Maximum junction temperature
-40 to +150
150
°C
TL
Lead temperature for soldering during 10 s.
260
°C
ELECTRICAL CHARACTERISTICS (RSENSE = 3 Ω, and Tamb = 25 °C)
Symbol
Parameter
Test condtions
VLG = 200 V
Min Max
Unit
ILGL
Line to GND leakage current
10
µA
Measured between TIP (or
RING) and GND
VLG
Line to GND operating voltage
200
290
V
V
VSWON
Line to GND voltage at SW1 or Measured at 50 Hz between TIPL
SW2 switching-on
(or RINGL) and GND,one cycle
ISWOFF
ISWON
C
Line to GND negative current
at SW1 or SW2 switching-off
Refer to test circuit fig 9
150
mA
mA
pF
Line current at SW1 or SW2
switching-on
Positive surge
Negative surge
220
370
320
470
Line to GND capacitance
V
LG = 0V VOSC= 200mVRMS
100
F = 1MHz
THERMAL RESISTANCE
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient
170
°C/W
8/11
CLP30-200B1
Fig.8 : TEST CIRCUIT FOR ISWOFF PARAMETER : GO - NO GO TEST
TIPL or RINGL
R
- V
D.U.T.
- 48 V
BAT
=
GND
Surge
generator
This is a GO-NO GO test which allows to confirm the switch-off current (IH) level in functional test
circuit.
TEST PROCEDURE
- Adjust the current level at the ISWOFF value by short circuiting the D.U.T
- Fire the D.U.T with a surge current : IPP = 10 A, 10/1000 µs
- The D.U.T will come back to the off-state within a duration of 50 ms max.
Fig. 9 : Typical variation of switching-on current
(positive or negative) versus RSENSE resistor and
junction temperature (see test condition Fig. 11).
Fig. 10 : Variation of switching-on current versus
RSENSE at 25 °C.
Iswon negative surge ( mA )
1000
Iswon @ 25°C ( mA )
1000
Iswon + min Iswon + max Iswon - min Iswon - max
Iswon - @ 0°C Iswon - @ +25°C Iswon - @ +70°C
Rsense ( Ohms )
Rsense ( Ohms )
100
100
1.6
3
6
1.6
3
6
fig. 12 : Relative variation of switching-off current
versus junction temperature (for RSENSE between
3 and 10 Ω).
Fig. 11 : ISWON MEASUREMENT
- ISWON = l1 when the CLP30-200B1 switches on (l1 is
progressively increased using R)
- Both TIP and RING sides of the CLP30-200B1 are
checked
ISWOFF [Tj°C] / ISWOFF [25°C]
- RL = 10Ω.
1.4
Rsense
1.2
1
I1
RL
±
TIPL
TIPS
0.8
0.6
0.4
48 V
R
GND
DUT
0
20
40
60
80
RINGL RINGS
Temperature (°C)
9/11
CLP30-200B1
Fig. 14 : Relative variation of switching-on voltage
versus dV/dt with an external resistor of 3 Ω.
Fig. 13 : Relative variation of switching-off current
versus RSENSE (between 3 and 10 Ω).
ISWOFF [Rsense] / ISWOFF [4 Ω]
VSWON / VREF
1.12
1.6
1.10
1.08
1.06
1.04
1.02
1.4
1.2
1.0
0.8
0.6
0.4
1.00
0.98
0.1
0.3
1
3
10
30
100 300 1000
4
6
8
10
dV/dt (V/µs)
Rsense ( Ω )
Fig. 16 : Capacitance (TIP/GND) versus applied
voltage (typical values).
Fig. 15 : Relative variation of internal reference
voltage versus junction temperature (ILG =1mA).
C (pF)
70
VREF [Tj°C] / VREF [25°C]
1.10
50
1.05
1.00
0.95
0.90
0.85
30
20
-40
-20
0
20
40
60
10
Tj (°C)
1
2
3
5
10
20 30
50
100
VR (V)
Fig. 17 : Surge peak current versus overload
duration (maximum values).
ITSM(A)
10
8
6
4
2
t(s)
0
0.01
0.1
1
10
100
1000
10/11
CLP30-200B1
PACKAGE MECANICAL DATA
SO8 plastic
DIMENSIONS
Millimetres Inches
Min. Typ. Max. Min. Typ. Max.
REF.
A
a1
a2
a3
b
1.75
0.069
0.010
0.065
0.033
0.019
0.010
0.020
L
c1
0.1
0.25 0.004
1.65
C
a3
A
a2
0.65
0.35
0.19
0.85 0.025
0.48 0.014
0.25 0.007
b
1
a1
e
b
E
e3
b1
C
D
M
0.25 0.50 0.50 0.010
45° (typ)
c1
D
5
8
4.8
5.8
5.0 0.189
6.2 0.228
0.197
0.244
F
E
1
4
e
1.27
3.81
0.050
0.150
e3
F
3.8
0.4
4.0 0.15
1.27 0.016
0.6
0.157
0.050
0.024
L
M
S
8° (max)
MARKING
Ordering code
Marking
CLP30
CLP30
Package
SO-8
Weight
Base qty
Delivery mode
Tube
CLP30-200B1
0.08g
0.08g
100
CLP30-200B1RL
SO-8
2500
Tape & Reel
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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11/11
相关型号：
CLP30-200B1_06
ASD (Application Specific Devices) Overvoltage and overcurrent protection for telecom line
STMICROELECTR
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