C5NF20V [STMICROELECTRONICS]

N-channel 20V - 0.030ohm - 5A - TSSOP8 2.7V-drive STripFET TM ll Power MOSFET; N沟道20V - 0.030ohm - 5A - TSSOP8 2.7V驱动的STripFET TM LL功率MOSFET


型号：	C5NF20V
厂家：	ST
描述：	N-channel 20V - 0.030ohm - 5A - TSSOP8 2.7V-drive STripFET TM ll Power MOSFET N沟道20V - 0.030ohm - 5A - TSSOP8 2.7V驱动的STripFET TM LL功率MOSFET 驱动
文件：	总12页 (文件大小：267K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STC5NF20V

N-channel 20V - 0.030Ω - 5A - TSSOP8

2.7V-drive STripFET™ II Power MOSFET

General features

Type

V_DSS

R_DS(on)

I_D

< 0.040 Ω (@ 4.5 V)

< 0.045 Ω (@ 2.7 V)

STC5NF20V

20V

■ Ultra low threshold gate drive (2.7V)

■ Standard outline for easy automated surface

TSSOP8

mount assembly

Description

This Power MOSFET is the latest development of

STMicroelectronics unique "Single Feature

Size™" strip-based process. The resulting

transistor shows extremely high packing density

for low on-resistance, rugged avalanche

characteristics and less critical alignment steps

therefore a remarkable manufacturing

reproducibility.

Internal schematic diagram

Applications

■ Switching application

Order codes

Part number

Marking

Package

Packaging

STC5NF20V

C5NF20V

TSSOP8

Tape & reel

February 2007

Rev 5

1/12

www.st.com

Contents

STC5NF20V

Contents

Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1

Electrical characteristics (curves)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

2/12

STC5NF20V

Electrical ratings

Table 1.

Symbol

Absolute maximum ratings

Parameter

Value

Unit

V_DS

Drain-source voltage (V_GS= 0)

V_DGRDrain-gate voltage (R_GS= 20KΩ)

V_GS

I_D

Gate-source voltage

Drain current (continuous) at T_C= 25°C

Drain current (continuous) at T_C=100°C

Drain current (pulsed)

I_D

(1)

I_DM

P_TOTTotal dissipation at T_C= 25°C

1.5

°C

T_stg

T_J

Storage temperature

–55 to 150

Max. Operating junction temperature

1. Pulse width limited by safe operating area

Table 2.

Symbol

Thermal data

Parameter

Value

Unit

R_thJ-PBCThermal resistance junction-PBC Max

100 ⁽¹⁾

83.5 ⁽²⁾

°C/W

1. When Mounted on FR-4 board with 1 inch²pad, 2 oz. of Cu. and t = 10 sec.

2. When Mounted on minimum recommended footprint

3/12

Electrical characteristics

STC5NF20V

Electrical characteristics

=25°C unless otherwise specified)

CASE

Table 3.

Symbol

On/off states

Parameter

Test conditions

Min.

Typ.

Max. Unit

Drain-source breakdown

voltage

V_(BR)DSS

I_D= 250µA, V_GS= 0

_DS= Max rating,

µA

Zero gate voltage drain

current (V_GS= 0)

I_DSS

V_DS= Max rating @125°C

Gate body leakage current

(V_DS= 0)

I_GSS

V_GS= 12V

100

V_GS(th)

R_DS(on)

V_DS= V_GS, I_D= 250µA

Gate threshold voltage

0.6

V_GS= 4.5V, I_D= 2.5A

V_GS=2.7V, I_D= 2.5A

0.030 0.040

0.037 0.045

Ω

Static drain-source on

resistance

Table 4.

Symbol

Dynamic

Parameter

Test conditions

Min. Typ. Max. Unit

(1)

Forward transconductance

V_DS= 15 V, I_D= 2.5A

9.5

g_fs

C_iss

C_oss

C_rss

Input capacitance

460

200

V_DS=15V, f = 1 MHz,

V_GS= 0

Output capacitance

Reverse transfer

capacitance

Q_g

Q_gs

Q_gd

Total gate charge

Gate-source charge

Gate-drain charge

8.5

1.8

2.4

11.5

V_DD=10V, I_D= 4.5A

V_GS=4.5V

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

Table 5.

Symbol

Switching times

Parameter

Test conditions

Min.

Typ. Max. Unit

t_d(on)

t_r

t_d(off)

t_f

Turn-on delay time

Rise time

V_DD= 10V, I_D= 2.5A,

R_G=4.7Ω, V_GS=4.5V

Figure 13 on page 8

Turn-off delay time

Fall time

t_d(off)

Off-voltage rise time

Fall time

Vclamp =16V, I_D= 5A

R_G= 4.7Ω, V_GS= 4.5V

Figure 15 on page 8

t_f

t_c

Cross-over time

4/12

STC5NF20V

Electrical characteristics

Min. Typ. Max Unit

Table 6.

Symbol

Source drain diode

Parameter

Test conditions

I_SD

Source-drain current

(1)

Source-drain current (pulsed)

Forward on voltage

1.2

I_SDM

(2)

I_SD= 5A, V_GS= 0

V_SD

I_SD= 5A,

t_rr

Reverse recovery time

Reverse recovery charge

Reverse recovery current

µC

di/dt = 100A/µs,

Q_rr

V_DD= 10V, T_J= 150°C

I_RRM

Figure 15 on page 8

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

5/12

Electrical characteristics

STC5NF20V

2.1

Electrical characteristics (curves)

Figure 1. Safe operating area

Figure 2. Thermal impedance

Figure 3. Output characteristics

Figure 4. Transfer characteristics

Figure 5. Transconductance

Figure 6. Static drain-source on resistance

6/12

STC5NF20V

Electrical characteristics

Figure 7. Gate charge vs. gate-source voltage Figure 8. Capacitance variations

Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs.

vs. temperature

temperature

Figure 11. Source-drain diode forward

characteristics

Figure 12. Thermal resistance and max power

7/12

Test circuit

STC5NF20V

Test circuit

Figure 13. Switching times test circuit for

resistive load

Figure 14. Gate charge test circuit

Figure 15. Test circuit for inductive load

switching and diode recovery times

Figure 16. Unclamped Inductive load test

circuit

Figure 17. Unclamped inductive waveform

8/12

STC5NF20V

Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect. The category of

second level interconnect is marked on the package and on the inner box label, in

compliance with JEDEC Standard JESD97. The maximum ratings related to soldering

conditions are also marked on the inner box label. ECOPACK is an ST trademark.

ECOPACK specifications are available at: www.st.com

9/12

Package mechanical data

STC5NF20V

10/12

STC5NF20V

Revision history

Table 7.

Date

Revision history

Revision

Changes

09-Sep-2004

03-Aug-2006

01-Feb-2007

Complete version

The document has been reformatted, SOA updated

Typo mistake on Table 1.

11/12

STC5NF20V

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the

right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any

time, without notice.

All ST products are sold pursuant to ST’s terms and conditions of sale.

Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no

liability whatsoever relating to the choice, selection or use of the ST products and services described herein.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this

document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products

or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such

third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED

WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED

WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS

OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.

UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT

RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING

APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,

DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE

GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void

any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any

liability of ST.

ST and the ST logo are trademarks or registered trademarks of ST in various countries.

Information in this document supersedes and replaces all information previously supplied.

The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -

Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

www.st.com

12/12

相关型号：