BYT230PIV-400 [STMICROELECTRONICS]
FAST RECOVERY RECTIFIER DIODES; 快恢复整流二极管型号: | BYT230PIV-400 |
厂家: | ST |
描述: | FAST RECOVERY RECTIFIER DIODES |
文件: | 总6页 (文件大小:69K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BYT230PIV-400
BYT231PIV-400
FAST RECOVERY RECTIFIER DIODES
K2
A2
A2
K1
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
2 x 30 A
400 V
1.4 V
K1
A1
K2
A1
VF (max)
trr (max)
BYT231PIV-400
BYT230PIV-400
50 ns
FEATURES AND BENEFITS
n
n
n
n
VERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
INSULATED PACKAGE: ISOTOP
Insulation voltage: 2500 VRMS
Capacitance = 45 pF
ISOTOPTM
(Plastic)
Inductance < 5 nH
DESCRIPTION
These rectifier devices are suited for free-wheeling
function in converters and motor control circuits.
Packaged in ISOTOP, they are intended for use in
Switch Mode Power Supplies.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Repetitive peak reverse voltage
Value
Unit
VRRM
400
V
IFRM
IF(RMS)
IF(AV)
900
50
A
A
A
Repetitive peak forward current
RMS forward current
tp=5 µs F=1kHz
30
Average forward current
Tc = 75°C
δ = 0.5
IFSM
Tstg
Tj
350
- 40 to + 150
150
A
Surge non repetitive forward current
Storage temperature range
tp = 10 ms Sinusoidal
°C
°C
Maximum operating junction temperature
TM: ISOTOP is a registered trademark of STMicroelectronics.
May 2000 - Ed: 5D
1/6
BYT230PIV-400 / BYT231PIV-400
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-c)
1.5
0.8
°C/W
Junction to case
Per diode
Total
Rth(c)
0.1
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
Unit
VF *
1.5
V
Forward voltage drop Tj = 25°C
Tj = 100°C
IF = 30 A
1.4
35
6
IR **
µA
Reverse leakage cur- Tj = 25°C
VR = VRRM
rent
mA
Tj = 100°C
Pulse test : * tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
To evaluate the conduction losses use the following equation:
2
P = 1.1 x IF(AV) + 0.0095 IF (RMS)
RECOVERY CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ. Max.
Unit
trr
100
ns
Tj = 25°C
IF = 1A VR = 30V dIF/dt = - 15A/µs
IF = 0.5A IR = 1A Irr = 0.25A
50
TURN-OFF SWITCHING CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
tIRM
75 ns
Maximum reverse
recovery time
dIF/dt = - 120 A/µs
dIF/dt = - 240 A/µs
dIF/dt = - 120 A/µs
dIF/dt = - 240 A/µs
VCC = 200 V
IF = 30 A
Lp 0.05 µH
Tj = 100°C
(see fig. 13)
50
IRM
9
A
/
Maximum reverse
recovery current
12
3.3
Turn-off overvoltage
coefficient
Tj = 100°C VCC = 60V
dIF/dt = - 30A/µs
(see fig. 14)
IF = IF(AV)
Lp = 1µH
VRP
C =
VCC
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BYT230PIV-400 / BYT231PIV-400
Fig. 1: Average forward power dissipation versus
Fig. 2: Peak current versus form factor (per diode).
average forward current (per diode).
PF(av)(W)
IM(A)
250
60
δ = 0.5
T
δ = 0.2
50
200
δ = 0.1
tp
=tp/T
δ
40
δ = 1
150
100
50
δ = 0.05
P=40W
30
P=50W
20
P=30W
T
P=20W
10
IF(av) (A)
tp
=tp/T
δ
δ
0
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
5
10
15
20
25
30
35
40
Fig. 3: Average forward current versus ambient
temperature (δ=0.5, per diode).
Fig. 4: Non repetitive surge peak forward current
versus overload duration (per diode).
IF(av)(A)
IM(A)
200
35
Rth(j-a)=Rth(j-c)
180
30
25
20
160
140
Tc=50°C
120
Rth(j-a)=5°C/W
Tc=25°C
15
100
10
5
T
80
IM
Tc=75°C
t
60
δ=0.5
t(s)
tp
=tp/T
δ
Tamb(°C)
40
1E-3
0
1E-2
1E-1
1E+0
0
25
50
75
100
125
150
Fig. 5: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
Fig. 6: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
K=[Zth(j-c)/Rth(j-c)]
200.0
1.0
100.0
Typicalvalues
Tj=100°C
δ = 0.5
0.5
10.0
1.0
Tj=25°C
δ = 0.2
δ = 0.1
Tj=100°C
T
0.2
Single pulse
tp
=tp/T
δ
tp(s)
VFM(V)
1.0 1.5
0.1
1E-3
0.1
1E-2
1E-1
1E+0
0.0
0.5
2.0
2.5
3/6
BYT230PIV-400 / BYT231PIV-400
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode).
Fig. 8: Recovery charges versus dIF/dt (per
diode).
C(pF)
Qrr(nC)
100
1000
F=1MHz
Tj=25°C
IF=IF(av)
90% confidence
Tj=100°C
90
80
70
60
50
40
100
30
dIF/dt(A/µs)
VR(V)
10
20
10
20
50
100
200
500
1
10
100 200
Fig. 9: Recovery current versus dIF/dt (per diode).
Fig. 10: Transient peak forward voltage versus
dIF/dt (per diode).
IRM(A)
VFP(V)
30
50
IF=IF(av)
90% confidence
Tj=100°C
IF=IF(av)
90% confidence
Tj=100°C
25
20
15
10
10
5
dIF/dt(A/µs)
dIF/dt(A/µs)
1
0
10
20
50
100
200
500
0
100
200
300
400
500
Fig. 11: Forward recovery time versus dIF/dt (per
diode).
Fig. 12: Dynamic parameters versus junction
temperature.
Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]
tfr(µs)
1.50
1.50
IF=IF(av)
90% confidence
Tj=100°C
1.25
1.25
1.00
1.00
0.75
0.50
IRM
0.75
Qrr
0.50
0.25
dIF/dt(A/µs)
Tj(°C)
0.00
0.25
0
100
200
300
400
500
0
25
50
75
100
125
150
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BYT230PIV-400 / BYT231PIV-400
Fig. 13: Turn-off switching characteristics (without
serie inductance).
Fig. 14: Turn-off switching characteristics (with
serie inductance).
IF
IF
DUT
DUT
diF/dt
diF/dt
LC
LC
LP
VCC
VCC
VF
VF
VCC
IRM
VRP
VCC
tIRM
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BYT230PIV-400 / BYT231PIV-400
PACKAGE MECHANICAL DATA
ISOTOP
DIMENSIONS
Millimeters Inches
REF.
Min.
Max.
Min.
Max.
A
A1
B
C
C2
D
D1
E
E1
E2
G
G1
G2
F
F1
P
11.80
8.90
7.8
0.75
1.95
37.80
31.50
25.15
23.85
12.20
9.10
8.20
0.85
2.05
38.20
31.70
25.50
24.15
0.465
0.350
0.307
0.030
0.077
1.488
1.240
0.990
0.939
0.480
0.358
0.323
0.033
0.081
1.504
1.248
1.004
0.951
24.80 typ.
0.976 typ.
14.90
12.60
3.50
4.10
4.60
4.00
4.00
30.10
15.10
12.80
4.30
4.30
5.00
4.30
4.40
30.30
0.587
0.496
0.138
0.161
0.181
0.157
0.157
1.185
0.594
0.504
0.169
0.169
0.197
0.69
P1
S
0.173
1.193
Delivery
mode
Ordering type
Marking
Package
Weight
Base qty
BYT230PIV-400 BYT230PIV-400
BYT231PIV-400 BYT231PIV-400
Cooling method: by conduction (C)
Recommended torque value : 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recom-
mended for mounting the package on the heatsink and the 4 screws given with the screw version).The
screws supplied with the package are adapted for mounting on a board (or other types of terminals) with
a thickness of 0.6 mm min and 2.2 mm max.
ISOTOP
ISOTOP
28 g. (without screws)
28 g. (without screws)
10
10
Tube
Tube
n
n
n
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such informationnor forany infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2000 STMicroelectronics - Printed in Italy - All rights reserved.
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