BTB16-700BWRG [STMICROELECTRONICS]

16A TRIACS; 16A双向可控硅
BTB16-700BWRG
型号: BTB16-700BWRG
厂家: ST    ST
描述:

16A TRIACS
16A双向可控硅

栅极 触发装置 可控硅 三端双向交流开关 局域网
文件: 总7页 (文件大小:103K)
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BTA/BTB16 and T16 Series  
®
SNUBBERLESS™ , LOGIC LEVEL & STANDARD  
16A TRIACS  
MAIN FEATURES:  
A2  
Symbol  
Value  
16  
Unit  
G
I
A
V
T(RMS)  
A1  
V
/V  
600, 700 and 800  
DRM RRM  
A2  
I
10 to 50  
mA  
GT (Q )  
1
A1  
A2  
A2  
DESCRIPTION  
G
Available either in through-hole or surface-mount  
packages, the BTA/BTB16 and T16 triac series is  
suitable for general purpose AC switching. They  
can be used as an ON/OFF function in applications  
such as static relays, heating regulation, induction  
motor starting circuits... or for phase control  
operation in light dimmers, motor speed  
controllers, ...  
The snubberless versions (BTA/BTB...W and T16  
series) are specially recommended for use on  
inductive loads, thanks to their high commutation  
performances. By using an internal ceramic pad,  
the BTA series provides voltage insulated tab  
(rated at 2500V RMS) complying with UL  
standards (File ref.: E81734).  
2
D PAK  
(T16-G)  
A1  
A2  
A1  
A2  
G
G
TO-220AB Insulated  
(BTA16)  
TO-220AB  
(BTB16)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
²
I
RMS on-state current  
(full sine wave)  
A
T(RMS)  
D2 PA K  
TO-220AB  
TO-220AB Ins.  
F = 60 Hz  
Tc = 100°C  
16  
Tc = 85°C  
t = 16.7 ms  
t = 20 ms  
I
Non repetitive surge peak on-state  
current (full cycle, Tj initial = 25°C)  
168  
160  
A
TSM  
F = 50 Hz  
²
²
²
tp = 10 ms  
144  
A s  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
F = 120 Hz  
Tj = 125°C  
Tj = 25°C  
50  
A/µs  
V
I
= 2 x I , tr 100 ns  
G
GT  
V
/V  
Non repetitive surge peak off-state  
voltage  
DRM RRM  
V
/V  
tp = 10 ms  
tp = 20 µs  
DSM RSM  
+ 100  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
4
A
GM  
P
Average gate power dissipation  
1
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
T
j
October 2002 - Ed: 6A  
1/7  
BTA/BTB16 and T16 Series  
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)  
SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)  
Symbol  
Test Conditions  
Quadrant  
T16  
BTA/BTB16  
Unit  
T1635  
SW  
CW  
35  
BW  
I
(1)  
mA  
I - II - III  
I - II - III  
I - II - III  
MAX.  
MAX.  
MIN.  
35  
10  
50  
GT  
V
V
V
= 12 V  
R = 33 Ω  
D
D
L
1.3  
V
GT  
V
0.2  
= V  
R = 3.3 kTj = 125°C  
V
GD  
DRM  
L
I
(2)  
I = 500 mA  
MAX.  
MAX.  
35  
50  
60  
500  
-
15  
25  
30  
40  
8.5  
3.0  
-
35  
50  
60  
500  
-
50  
70  
80  
1000  
-
mA  
mA  
H
T
I
I
= 1.2 I  
I - III  
II  
G
GT  
L
dV/dt (2)  
V
= 67 % V  
gate open Tj = 125°C  
MIN.  
MIN.  
V/µs  
D
DRM  
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs  
(dV/dt)c = 10 V/µs  
Tj = 125°C  
Tj = 125°C  
Tj = 125°C  
A/ms  
-
-
-
Without snubber  
8.5  
8.5  
14  
STANDARD (4 Quadrants)  
Symbol  
Test Conditions  
Quadrant  
BTA/BTB16  
Unit  
C
B
I
(1)  
I - II - III  
IV  
25  
50  
50  
100  
mA  
GT  
MAX.  
V
V
= 12 V  
R = 33 Ω  
D
L
V
ALL  
ALL  
MAX.  
MIN.  
1.3  
0.2  
V
V
GT  
V
= V  
R = 3.3 kTj = 125°C  
GD  
D
DRM  
L
I
(2)  
I = 500 mA  
MAX.  
MAX.  
25  
40  
80  
200  
5
50  
60  
mA  
mA  
H
T
I
I
= 1.2 I  
I - III - IV  
II  
G
GT  
L
120  
400  
10  
V
= 67 % V  
gate open Tj = 125°C  
dV/dt (2)  
MIN.  
MIN.  
V/µs  
V/µs  
D
DRM  
(dV/dt)c(2) (dI/dt)c = 7 A/ms  
Tj = 125°C  
STATIC CHARACTERISTICS  
Symbol  
Test Conditions  
Value  
Unit  
V
(2)  
(2)  
I
= 22.5 A  
tp = 380 µs  
Threshold voltage  
Dynamic resistance  
= V  
Tj = 25°C  
MAX.  
MAX.  
MAX.  
1.55  
0.85  
25  
V
V
TM  
TM  
V
Tj = 125°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
to  
R (2)  
mΩ  
µA  
mA  
d
I
I
V
5
DRM  
RRM  
DRM  
RRM  
MAX.  
2
Note 1: minimum IGT is guaranted at 5% of IGT max.  
Note 2: for both polarities of A2 referenced to A1  
2/7  
BTA/BTB16 and T16 Series  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
²
R
Junction to case (AC)  
°C/W  
th(j-c)  
D PAK  
1.2  
TO-220AB  
TO-220AB Insulated  
2.1  
²
²
R
Junction to ambient  
°C/W  
45  
th(j-a)  
S = 1 cm  
D PAK  
TO-220AB  
60  
TO-220AB Insulated  
S: Copper surface under tab  
PRODUCT SELECTOR  
Voltage(xxx)  
700 V  
Package  
Part Number  
Sensitivity  
Type  
600 V  
800 V  
BTA/BTB16-xxxB  
BTA/BTB16-xxxBW  
BTA/BTB16-xxxC  
BTA/BTB16-xxxCW  
BTA/BTB16-xxxSW  
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
50 mA  
50 mA  
25 mA  
35 mA  
10 mA  
Standard  
Snubberless  
Standard  
TO-220AB  
TO-220AB  
TO-220AB  
TO-220AB  
TO-220AB  
Snubberless  
Logic level  
²
T1635-xxxG  
X
X
35 mA  
Snubberless  
D PAK  
ORDERING INFORMATION  
BT A 16 - 600 BW (RG)  
TRIAC  
PACKING MODE  
Blank: Bulk  
RG:Tube  
SERIES  
SENSITIVITY & TYPE  
B: 50mA STANDARD  
BW: 50mA SNUBBERLESS  
C: 25mA STANDARD  
CW: 35mA SNUBBERLESS  
SW: 10mA LOGIC LEVEL  
INSULATION:  
A: insulated  
B: non insulated  
VOLTAGE:  
600: 600V  
700: 700V  
800: 800V  
CURRENT: 16A  
T 16 35 - 600 G (-TR)  
TRIAC  
SERIES  
PACKAGE:  
G: D2PAK  
CURRENT: 16A  
VOLTAGE:  
PACKING MODE:  
Blank:Tube  
-TR:Tape & Reel  
600: 600V  
800: 800V  
SENSITIVITY:  
35: 35mA  
3/7  
BTA/BTB16 and T16 Series  
OTHER INFORMATION  
Part Number  
Base  
quantity  
Packing  
mode  
Marking  
Weight  
BTA/BTB16-xxxyz  
BTA/BTB16-xxxyzRG  
T1635-xxxG  
BTA/BTB16xxxyz  
2.3 g  
2.3 g  
1.5 g  
1.5 g  
250  
50  
Bulk  
Tube  
BTA/BTB16-xxxyz  
T1635xxxG  
50  
Tube  
T1635-xxxG-TR  
T1635xxxG  
1000  
Tape & reel  
Note: xxx = voltage, y = sensitivity, z = type  
Fig. 1: Maximum power dissipation versus RMS  
Fig. 2-1: RMS on-state current versus case  
on-state current (full cycle).  
temperature (full cycle).  
P (W)  
IT(RMS) (A)  
20  
18  
BTB/T16  
18  
16  
14  
12  
10  
8
16  
14  
BTA  
12  
10  
8
6
6
4
4
2
0
2
IT(RMS) (A)  
Tc(°C)  
0
0
2
4
6
8
10  
12  
14  
16  
0
25  
50  
75  
100  
125  
Fig. 2-2: PAK RMS on-state current versus  
ambient temperature (printed circuit board FR4,  
copper thickness: 35 µm), full cycle.  
Fig. 3: Relative variation of thermal impedance  
versus pulse duration.  
IT(RMS) (A)  
K=[Zth/Rth]  
4.0  
1E+0  
D2PAK  
3.5  
Zth(j-c)  
(S=1cm2)  
3.0  
2.5  
2.0  
1.5  
1.0  
1E-1  
Zth(j-a)  
tp (s)  
0.5  
Tamb(°C)  
1E-2  
0.0  
1E-3  
1E-2  
1E-1  
1E+0  
1E+1  
1E+2 5E+2  
0
25  
50  
75  
100  
125  
4/7  
BTA/BTB16 and T16 Series  
Fig. 4: On-state characteristics (maximum  
Fig. 5: Surge peak on-state current versus  
values)  
number of cycles.  
ITM (A)  
ITSM (A)  
200  
180  
Tj max  
100  
160  
140  
120  
100  
80  
t=20ms  
One cycle  
Non repetitive  
Tj initial=25°C  
10  
Tj=25°C  
Repetitive  
Tc=85°C  
60  
Tj max:  
40  
Vto = 0.85 V  
Rd = 25 m  
VTM (V)  
20  
Number of cycles  
1
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
1
10  
100  
1000  
Fig. 6: Non-repetitive surge peak on-state  
Fig. 7: Relative variation of gate trigger current,  
holding current and latching current versus  
junction temperature (typical values).  
current for  
a
sinusoidal pulse with width  
tp < 10ms, and corresponding value of I²t.  
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]  
ITSM (A), I²t (A²s)  
2.5  
3000  
Tj initial=25°C  
2.0  
dI/dt limitation:  
50A/µs  
IGT  
1000  
1.5  
IH & IL  
ITSM  
I²t  
1.0  
0.5  
Tj(°C)  
tp (ms)  
0.0  
100  
0.01  
-40 -20  
0
20  
40  
60  
80 100 120 140  
0.10  
1.00  
10.00  
Fig. 8: Relative variation of critical rate of  
decrease of main current versus (dV/dt)c (typical  
values).  
Fig. 9: Relative variation of critical rate of  
decrease of main current versus junction  
temperature.  
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]  
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c  
6
2.0  
1.8  
SW  
5
4
3
2
C
1.6  
B
1.4  
1.2  
BW/CW/T1635  
1.0  
0.8  
1
0.6  
Tj (°C)  
(dV/dt)c (V/µs)  
0.4  
0
0.1  
1.0  
10.0  
100.0  
0
25  
50  
75  
100  
125  
5/7  
BTA/BTB16 and T16 Series  
Fig. 10:PAK Thermal resistance junction to  
ambient versus copper surface under tab (printed  
circuit board FR4, copper thickness: 35 µm).  
Rth(j-a) (°C/W)  
80  
D2PAK  
70  
60  
50  
40  
30  
20  
10  
0
S(cm²)  
0
4
8
12 16 20 24 28 32 36 40  
PACKAGE MECHANICAL DATA  
TO-220AB (Plastic)  
DIMENSIONS  
Millimeters  
Min. Typ. Max. Min. Typ. Max.  
REF.  
Inches  
B
C
b2  
A
a1  
a2  
B
15.20  
15.90 0.598  
0.625  
L
3.75  
0.147  
F
I
13.00  
10.00  
0.61  
1.23  
4.40  
0.49  
2.40  
2.40  
6.20  
3.75  
14.00 0.511  
10.40 0.393  
0.88 0.024  
1.32 0.048  
4.60 0.173  
0.70 0.019  
2.72 0.094  
2.70 0.094  
6.60 0.244  
3.85 0.147  
0.551  
0.409  
0.034  
0.051  
0.181  
0.027  
0.107  
0.106  
0.259  
0.151  
A
b1  
b2  
C
l4  
c1  
c2  
e
c2  
a1  
l3  
l2  
a2  
F
I
I4  
L
15.80 16.40 16.80 0.622 0.646 0.661  
2.65  
1.14  
1.14  
2.95 0.104  
1.70 0.044  
1.70 0.044  
0.116  
0.066  
0.066  
b1  
M
c1  
l2  
l3  
M
e
2.60  
0.102  
6/7  
BTA/BTB16 and T16 Series  
PACKAGE MECHANICAL DATA  
PAK (Plastic)  
DIMENSIONS  
REF.  
Millimeters  
Inches  
A
E
Min. Typ. Max. Min. Typ. Max.  
C2  
L2  
A
A1  
A2  
B
4.30  
2.49  
0.03  
0.70  
1.25  
0.45  
1.21  
8.95  
10.00  
4.88  
15.00  
1.27  
1.40  
4.60 0.169  
2.69 0.098  
0.23 0.001  
0.93 0.027  
0.181  
0.106  
0.009  
0.037  
D
L
B2  
C
1.40  
0.048 0.055  
L3  
0.60 0.017  
1.36 0.047  
9.35 0.352  
10.28 0.393  
5.28 0.192  
15.85 0.590  
1.40 0.050  
1.75 0.055  
0.024  
0.054  
0.368  
0.405  
0.208  
0.624  
0.055  
0.069  
A1  
C2  
D
B2  
B
R
C
E
G
G
L
A2  
2.0 MIN.  
FLAT ZONE  
L2  
L3  
R
0.40  
0.016  
V2  
V2  
0°  
8°  
0°  
8°  
FOOTPRINT DIMENSIONS (in millimeters)  
PAK (Plastic)  
16.90  
10.30  
5.08  
1.30  
3.70  
8.90  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
© The ST logo is a registered trademark of STMicroelectronics  
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany  
Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore  
Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
7/7  

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