BTB04S [STMICROELECTRONICS]
SENSITIVE GATE TRIACS; 敏感的双向可控硅门
| 型号： | BTB04S |
| 厂家： | 
ST |
| 描述： | SENSITIVE GATE TRIACS |
| 文件： | 总5页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BTA04 T/D/S/A
BTB04 T/D/S/A
SENSITIVE GATE TRIACS
FEATURES
.
.
.
VERY LOW I = 10mA max
GT
LOW I = 15mA max
H
BTA Family :
INSULATINGVOLTAGE = 2500V
(UL RECOGNIZED : E81734)
(RMS)
DESCRIPTION
A1
A2
The BTA/BTB04 T/D/S/A triac family are high per-
formance glass passivated PNPN devices.
These parts are suitables for general purpose ap-
plications where gate high sensitivity is required.
Application on 4Q such as phase control and static
switching.
G
TO220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I
RMS on-state current
(360° conduction angle)
BTA
BTB
Tc = 90°C
Tc = 95°C
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
4
A
T(RMS)
I
Non repetitive surge peak on-state current
( Tj initial = 25°C )
42
40
8
A
TSM
2
I t
2
2
A s
I t value
dI/dt
Critical rate of rise of on-state current
Repetitive
F = 50 Hz
10
A/µs
Gate supply : I = 50mA di /dt = 0.1A/µs
G
G
Non
50
Repetitive
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 110
°C
°C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
°C
Symbol
Parameter
BTA / BTB04-
Unit
400 T/D/S/A
600 T/D/S/A
700 T/D/S/A
700
V
V
Repetitive peak off-state voltage
Tj = 110°C
400
600
V
DRM
RRM
1/5
March 1995
BTA04 T/D/S/A / BTB04 T/D/S/A
THERMAL RESISTANCES
Symbol
Parameter
Value
60
Unit
°C/W
°C/W
Rth (j-a)
Junction to ambient
Rth (j-c) DC Junction to case for DC
BTA
BTB
BTA
BTB
4.4
3.2
Rth (j-c) AC Junction to case for 360° conduction angle
3.3
°C/W
( F= 50 Hz)
2.4
GATE CHARACTERISTICS (maximum values)
P
= 1W
P
GM
= 40W (tp = 20 µs)
I
= 4A (tp = 20 µs)
V
= 16V (tp = 20 µs).
G (AV)
GM
GM
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
Suffix
Unit
T
5
5
D
5
S
A
I
V =12V (DC) R =33Ω
Tj=25°C
I-II-III
IV
MAX
MAX
MAX
MIN
10
10
10
25
mA
GT
D
L
10
V
V =12V (DC) R =33Ω
Tj=25°C
Tj=110°C
Tj=25°C
I-II-III-IV
I-II-III-IV
I-II-III-IV
1.5
0.2
2
V
V
GT
D
L
V
V =V
R =3.3kΩ
L
GD
D
DRM
DRM
tgt
V =V
I
G
= 40mA
TYP
µs
D
dI /dt = 0.5A/µs
G
I
IG= 1.2 I
GT
Tj=25°C
I-III-IV
II
TYP
10
20
15
10
20
15
20
40
25
20
40
25
mA
L
I
*
I = 100mA gate open
T
Tj=25°C
Tj=25°C
Tj=25°C
Tj=110°C
Tj=110°C
MAX
MAX
MAX
MAX
TYP
MIN
mA
V
H
V
*
I
= 5.5A tp= 380µs
TM
1.65
0.01
0.75
TM
I
I
V
V
Rated
Rated
mA
DRM
RRM
DRM
RRM
dV/dt *
Linear
slope
up
to
10
-
10
-
-
-
V/µs
V/µs
V =67%V
gate open
D
DRM
10
10
(dV/dt)c *
(dI/dt)c = 1.8A/ms
Tj=110°C
TYP
1
1
5
5
* For either polarity of electrode A2 voltage with reference to electrode A1.
2/5
BTA04 T/D/S/A / BTB04 T/D/S/A
ORDERING INFORMATION
Package
I
V
/ V
RRM
Sensitivity Specification
T(RMS)
A
DRM
V
T
X
X
X
X
X
X
D
X
X
X
X
X
X
S
X
X
X
X
X
X
A
X
X
X
X
X
X
BTA
4
400
600
700
400
600
700
(Insulated)
BTB
(Uninsulated)
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
Fig.2
:
Correlation between maximum RMS power
amb
) for different thermal resistances heatsink +
dissipation and maximum allowable temperatures (T
and T
case
contact (BTA).
Fig.3
:
Correlation between maximum RMS power
amb
) for different thermal resistances heatsink +
Fig.4 : RMS on-state current versus case temperature.
dissipation and maximum allowable temperatures (T
and T
case
contact (BTB).
3/5
BTA04 T/D/S/A / BTB04 T/D/S/A
Fig.5 : Relative variation of thermal impedance versus
Fig.6 : Relative variation of gate trigger current and
pulse duration.
holding current versus junction temperature.
Zth/Rth
1
Zth(j-c)
0.1
Zth(j-a)
tp(s)
1E+2 5E+2
0.01
1E-3
1E-2
1E-1
1E+0
1E+1
Fig.7 : Non Repetitive surge peak on-state current
Fig.8 : Non repetitive surge peak on-state current for a
versus number of cycles.
sinusoidal pulse with width
corresponding value of I t.
:
t
≤
10ms, and
2
Fig.9 : On-state characteristics (maximum values).
4/5
BTA04 T/D/S/A / BTB04 T/D/S/A
PACKAGE MECHANICAL DATA
TO220AB Plastic
REF.
DIMENSIONS
Millimeters Inches
Min. Min.
H
Max.
10.50
15.87
14.70
6.85
4.50
3.00
4.82
4.00
1.39
0.65
2.70
5.58
1.20
0.96
Max.
0.413
0.625
0.579
0.270
0.178
0.119
0.190
0.158
0.055
0.026
0.107
0.22
A
J
G
A
B
C
D
F
10.20
14.23
12.70
5.85
0.401
0.560
0.500
0.230
I
D
B
C
G
H
I
2.54
4.48
3.55
1.15
0.35
2.10
4.58
0.80
0.64
0.100
0.176
0.140
0.045
0.013
0.082
0.18
F
O
L
J
P
L
M
N
O
P
M
N
=
=
0.031
0.025
0.048
0.038
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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5/5
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