BTA24-800BW [STMICROELECTRONICS]

25A TRIACS; 25A双向可控硅
BTA24-800BW
型号: BTA24-800BW
厂家: ST    ST
描述:

25A TRIACS
25A双向可控硅

栅极 触发装置 可控硅 三端双向交流开关 局域网
文件: 总9页 (文件大小:99K)
中文:  中文翻译
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BTA/BTB24, BTA25, BTA26  
and T25 Series  
SNUBBERLESS & STANDARD  
MAIN FEATURES:  
25A TRIACS  
A2  
Symbol  
Value  
Unit  
A2  
A2  
G
I
25  
A
V
T(RMS)  
A1  
V
/V  
600 and 800  
35 to 50  
DRM RRM  
A1  
A2  
A1  
A2  
G
G
I
mA  
GT (Q )  
1
A2  
TO-220AB  
(BTB24)  
TO-220AB  
Insulated  
(BTA24)  
DESCRIPTION  
A1  
A2  
G
Available either in through-hole of surface and T25  
mount packages, the BTA/BTB24-25-26 triac  
series is suitable for general purpose AC power  
switching. They can be used as an ON/OFF  
function in applications such as static relays,  
heating regulation, water heaters, induction motor  
starting circuits...or for phase control operation in  
high power motor speed controllers, soft start  
circuits...The snubberless versions (BTA/BTB...W  
and T25 series) are specially recommended for  
use on inductive loads, thanks to their high  
commutation performances.  
2
D PAK  
(T25G)  
A1  
A2  
G
A1  
A2  
G
TOP3  
RD91  
(BTA25)  
Insulated  
(BTA26)  
By using an internal ceramic pad, the BTA series  
provides voltage insulated tab (rated at 2500V  
RMS) complying with UL standards (File ref.:  
E81734).  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
RMS on-state current (full sine wave)  
Value  
Unit  
I
A
T(RMS)  
D PAK  
TO-220AB  
Tc = 100°C  
Tc = 90°C  
25  
RD91  
TOP3 Ins.  
TO-220AB Ins.  
F = 60 Hz  
Tc = 75°C  
t = 16.7 ms  
t = 20 ms  
I
Non repetitive surge peak on-state  
current (full cycle, Tj initial = 25°C)  
260  
250  
A
TSM  
F = 50 Hz  
tp = 10 ms  
450  
A s  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
F = 120 Hz  
Tj = 125°C  
Tj = 25°C  
50  
/V  
A/µs  
I
= 2 x I  
, tr 100 ns  
G
GT  
V
Non repetitive surge peak off-state  
voltage  
DRM RRM  
+ 100  
V
/V  
tp = 10 ms  
V
DSM RSM  
I
Peak gate current  
tp = 20 µs  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
T
j
September 2000 - Ed: 3  
1/9  
BTA/BTB24, BTA25, BTA26 and T25 Series  
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)  
SNUBBERLESS (3 Quadrants) T25-G, BTA/BTB24...W, BTA25...W, BTA26...W  
Symbol  
Test Conditions  
Quadrant  
T25  
BTA/BTB  
Unit  
T2535  
CW  
BW  
I
(1)  
mA  
I - II - III  
MAX.  
35  
35  
50  
GT  
V
V
= 12 V  
R = 33 Ω  
D
D
L
V
V
I - II - III  
I - II - III  
MAX.  
MIN.  
1.3  
0.2  
V
V
GT  
= V  
R = 3.3 kTj = 125°C  
GD  
(2)  
DRM  
L
I
I = 500 mA  
MAX.  
MAX.  
50  
50  
75  
mA  
mA  
H
T
I
I
= 1.2 I  
GT  
I - III  
II  
70  
80  
70  
80  
80  
100  
1000  
22  
L
G
dV/dt (2)  
V
= 67 % V  
gate open Tj = 125°C  
Tj = 125°C  
MIN.  
MIN.  
500  
13  
500  
13  
V/µs  
D
DRM  
(dI/dt)c (2) Without snubber  
A/ms  
STANDARD (4 Quadrants): BTA25...B, BTA26...B  
Symbol  
Test Conditions  
Quadrant  
Value  
Unit  
I
(1)  
I - II - III  
IV  
50  
100  
mA  
GT  
V
MAX.  
V
V
= 12 V  
R = 33 Ω  
D
D
L
ALL  
ALL  
MAX.  
MIN.  
1.3  
0.2  
V
V
GT  
V
= V  
R = 3.3 kTj = 125°C  
GD  
DRM  
L
I
(2)  
I = 500 mA  
MAX.  
MAX.  
80  
70  
mA  
mA  
H
T
I
I
= 1.2 I  
I - III - IV  
II  
G
GT  
L
160  
500  
10  
dV/dt (2)  
V
= 67 % V  
gate open Tj = 125°C  
MIN.  
MIN.  
V/µs  
V/µs  
D
DRM  
(dV/dt)c (2) (dI/dt)c = 13.3 A/ms  
Tj = 125°C  
STATIC CHARACTERISTICS  
Symbol  
Test Conditions  
Tj = 25°C  
Value  
Unit  
I
= 35 A  
tp = 380 µs  
MAX.  
MAX.  
MAX.  
1.55  
V
V
(2)  
(2)  
TM  
TM  
V
Threshold voltage  
Tj = 125°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
0.85  
16  
5
V
to  
R (2)  
Dynamic resistance  
mΩ  
µA  
mA  
d
I
I
V
= V  
DRM RRM  
DRM  
RRM  
MAX.  
3
Note 1: minimum IGT is guaranted at 5% of IGT max.  
Note 2: for both polarities of A2 referenced to A1  
2/9  
BTA/BTB24, BTA25, BTA26 and T25 Series  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
R
Junction to case (AC)  
°C/W  
th(j-c)  
D PAK  
TO-220AB  
0.8  
RD91 (Insulated)  
TOP3 Insulated  
1.1  
TO-220AB Insulated  
1.7  
45  
50  
R
Junction to ambient  
°C/W  
th(j-a)  
S = 1 cm  
D PAK  
TOP3 Insulated  
TO-220AB  
60  
TO-220AB Insulated  
S: Copper surface under tab  
PRODUCT SELECTOR  
Voltage (xxx)  
Part Number  
Sensitivity  
Type  
Package  
600 V  
800 V  
BTB24-xxxB  
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
50 mA  
50 mA  
35 mA  
50 mA  
50 mA  
35 mA  
50 mA  
50 mA  
35 mA  
Standard  
Snubberless  
Snubberless  
Standard  
TO-220AB  
TO-220AB  
TO-220AB  
RD-91  
BTA/BTB24-xxxBW  
BTA/BTB24-xxxCW  
BTA25-xxxB  
BTA25-xxxBW  
BTA25-xxxCW  
BTA26-xxxB  
Snubberless  
Snubberless  
Standard  
RD-91  
RD-91  
TOP3 Ins.  
TOP3 Ins.  
TOP3 Ins.  
BTA26-xxxBW  
BTA26-xxxCW  
Snubberless  
Snubberless  
T2535-xxxG  
X
X
35 mA  
Snubberless  
D PAK  
BTB: Non insulated TO-220AB package  
ORDERING INFORMATION  
BT A 24 - 600 BW  
TRIAC  
SERIES  
SENSITIVITY & TYPE  
B: 50mA STANDARD  
BW: 50mA SNUBBERLESS  
CW: 35mA SNUBBERLESS  
INSULATION:  
A: insulated  
B: non insulated  
VOLTAGE:  
600: 600V  
800: 800V  
CURRENT:  
24: 25A in TO-220AB  
25: 25A in Rd91  
26: 25A in TOP3  
3/9  
BTA/BTB24, BTA25, BTA26 and T25 Series  
T 25 35 - 600 G  
(-TR)  
TRIAC  
SERIES  
PACKAGE:  
G: D2PAK  
CURRENT: 25A  
VOLTAGE:  
600: 600V  
800: 800V  
PACKING MODE:  
Blank:Tube  
-TR:Tape & Reel  
SENSITIVITY:  
35: 35mA  
OTHER INFORMATION  
Part Number  
Base  
quantity  
Packing  
mode  
Marking  
Weight  
BTA/BTB24-xxxyz  
BTA25-xxxyz  
BTA/BTB24xxxyz  
BTA25xxxyz  
BTA26xxxyz  
T2535xxxG  
2.3 g  
20 g  
4.5 g  
1.5 g  
1.5 g  
250  
25  
Bulk  
Bulk  
BTA26-xxxyz  
120  
50  
Bulk  
T2535-xxxG  
Tube  
T2535-xxxG-TR  
T2535xxxG  
1000  
Tape & reel  
Note: xxx= voltage, y = sensitivity, z = type  
4/9  
BTA/BTB24, BTA25, BTA26 and T25 Series  
Fig. 1: Maximum power dissipation versus RMS  
Fig. 2-1: RMS on-state current versus case  
on-state current (full cycle).  
temperature (full cycle).  
P (W)  
IT(RMS) (A)  
30  
30  
BTB/T25  
25  
20  
15  
10  
25  
BTA24  
20  
BTA25/26  
15  
10  
5
5
IT(RMS) (A)  
Tc(°C)  
0
0
0
25  
50  
75  
100  
125  
0
5
10  
15  
20  
25  
Fig. 2-2: D PAK RMS on-state current versus  
ambient temperature (printed circuit board FR4,  
copper thickness: 35 µm), full cycle.  
Fig. 3: Relative variation of thermal impedance  
versus pulse duration.  
IT(RMS) (A)  
K=[Zth/Rth]  
1E+0  
4.0  
D2PAK  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
(S=1cm2)  
Zth(j-c)  
1E-1  
Zth(j-a)  
BTA/BTB24/T25  
1E-2  
Zth(j-a)  
BTA26  
Tamb(°C)  
50 75  
tp (s)  
1E-3  
1E-3  
1E-2  
1E-1  
1E+0  
1E+1  
1E+2 5E+2  
0
25  
100  
125  
Fig. 4:  
values).  
On-state characteristics (maximum  
Fig. 5: Surge peak on-state current versus  
number of cycles.  
ITM (A)  
ITSM (A)  
300  
100  
300  
250  
t=20ms  
Tj max  
One cycle  
Non repetitive  
200  
Tj initial=25°C  
150  
Repetitive  
Tc=75°C  
10  
Tj=25°C  
100  
Tj max.  
Vto = 0.85 V  
Rd = 16 m  
50  
VTM (V)  
Number of cycles  
0
1
1
10  
100  
1000  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5/9  
BTA/BTB24, BTA25, BTA26 and T25 Series  
Fig. 6: Non-repetitive surge peak on-state  
current for a sinusoidal pulse with width  
tp < 10ms, and corresponding value of I t.  
Fig. 7: Relative variation of gate trigger current,  
holding current and latching current versus  
junction temperature (typical values).  
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]  
ITSM (A), I t (A s)  
2.5  
3000  
Tj initial=25°C  
2.0  
dI/dt limitation:  
50A/µs  
IGT  
ITSM  
1000  
1.5  
I t  
IH & IL  
1.0  
0.5  
tp (ms)  
Tj(°C)  
100  
0.0  
0.01  
0.10  
1.00  
10.00  
-40 -20  
0
20  
40  
60  
80 100 120 140  
Fig. 8: Relative variation of critical rate of  
decrease of main current versus (dV/dt)c (typical  
values).  
Fig. 9: Relative variation of critical rate of  
decrease of main current versus junction  
temperature.  
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]  
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c  
6
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
5
4
3
2
BW/CW/T2535  
B
1
0.6  
Tj (°C)  
(dV/dt)c (V/µs)  
0.4  
0
0.1  
1.0  
10.0  
100.0  
0
25  
50  
75  
100  
125  
Fig. 10: D PAK Thermal resistance junction to  
ambient versus copper surface under tab (printed  
circuit board FR4, copper thickness: 35 µm).  
Rth(j-a) (°C/W)  
80  
D PAK  
70  
60  
50  
40  
30  
20  
10  
S(cm )  
0
0
4
8
12 16 20 24 28 32 36 40  
6/9  
BTA/BTB24, BTA25, BTA26 and T25 Series  
PACKAGE MECHANICAL DATA  
D PAK (Plastic)  
DIMENSIONS  
REF.  
Millimeters  
Inches  
A
E
Min. Typ. Max. Min. Typ. Max.  
C2  
L2  
A
A1  
A2  
B
4.30  
2.49  
0.03  
0.70  
1.25  
0.45  
1.21  
8.95  
10.00  
4.88  
15.00  
1.27  
1.40  
4.60 0.169  
2.69 0.098  
0.23 0.001  
0.93 0.027  
0.181  
0.106  
0.009  
0.037  
D
L
B2  
C
1.40  
0.048 0.055  
L3  
0.60 0.017  
1.36 0.047  
9.35 0.352  
10.28 0.393  
5.28 0.192  
15.85 0.590  
1.40 0.050  
1.75 0.055  
0.024  
0.054  
0.368  
0.405  
0.208  
0.624  
0.055  
0.069  
A1  
C2  
D
B2  
B
R
C
E
G
G
L
A2  
2.0 MIN.  
FLAT ZONE  
L2  
L3  
R
0.40  
0.016  
V2  
V2  
0°  
8°  
0°  
8°  
FOOTPRINT DIMENSIONS (in millimeters)  
D PAK (Plastic)  
16.90  
10.30  
5.08  
1.30  
3.70  
8.90  
7/9  
BTA/BTB24, BTA25, BTA26 and T25 Series  
PACKAGE MECHANICAL DATA  
RD91 (Plastic)  
DIMENSIONS  
Millimeters  
A2  
L2  
L1  
REF.  
Inches  
Max.  
Min.  
Max.  
Min.  
A
A1  
A2  
B
40.00  
30.30  
22.00  
27.00  
16.50  
24.00  
14.00  
3.50  
1.575  
1.193  
0.867  
1.063  
0.650  
0.945  
0.551  
0.138  
0.118  
0.035  
0.177  
0.535  
0.138  
0.075  
43°  
B2  
B1  
29.90  
1.177  
C
C2  
C1  
A1  
B1  
B2  
C
13.50  
0.531  
N2  
N1  
C1  
C2  
E3  
F
1.95  
0.70  
4.00  
11.20  
3.10  
1.70  
33°  
3.00  
0.077  
0.027  
0.157  
0.441  
0.122  
0.067  
33°  
B
0.90  
F
I
4.50  
E3  
I
13.60  
3.50  
A
L1  
L2  
N1  
N2  
1.90  
43°  
28°  
38°  
28°  
38°  
PACKAGE MECHANICAL DATA  
TOP3 (Plastic)  
DIMENSIONS  
Millimeters  
Min. Typ. Max. Min. Typ. Max.  
REF.  
Inches  
A
B
C
D
E
F
4.4  
1.45  
14.35  
0.5  
4.6  
0.173  
0.181  
0.061  
0.614  
0.028  
0.114  
0.650  
0.831  
0.610  
0.222  
0.144  
0.164  
0.055  
1.55 0.057  
15.60 0.565  
0.7  
2.9  
0.020  
0.106  
2.7  
15.8  
20.4  
15.1  
5.4  
16.5 0.622  
21.1 0.815  
15.5 0.594  
5.65 0.213  
3.65 0.134  
4.17 0.161  
1.40 0.047  
G
H
J
K
L
3.4  
4.08  
1.20  
P
R
4.60  
0.181  
8/9  
BTA/BTB24, BTA25, BTA26 and T25 Series  
PACKAGE MECHANICAL DATA  
TO-220AB (Plastic)  
DIMENSIONS  
REF.  
Millimeters  
Inches  
B
C
b2  
Min. Typ. Max. Min. Typ. Max.  
A
a1  
a2  
B
15.20  
15.90 0.598  
0.625  
L
3.75  
0.147  
F
I
13.00  
10.00  
0.61  
1.23  
4.40  
0.49  
2.40  
2.40  
6.20  
3.75  
14.00 0.511  
10.40 0.393  
0.88 0.024  
1.32 0.048  
4.60 0.173  
0.70 0.019  
2.72 0.094  
2.70 0.094  
6.60 0.244  
3.85 0.147  
0.551  
0.409  
0.034  
0.051  
0.181  
0.027  
0.107  
0.106  
0.259  
0.151  
A
b1  
b2  
C
l4  
c1  
c2  
e
c2  
a1  
l3  
l2  
a2  
F
I
I4  
L
15.80 16.40 16.80 0.622 0.646 0.661  
2.65  
1.14  
1.14  
2.95 0.104  
1.70 0.044  
1.70 0.044  
0.116  
0.066  
0.066  
b1  
M
c1  
l2  
l3  
M
e
2.60  
0.102  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use ofsuch information nor for any infringement of patents or other rights of third parties which may result from its use. No license isgranted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
2000 STMicroelectronics - Printed in Italy - All Rights Reserved  
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9/9  

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