BTA06-800B [STMICROELECTRONICS]
SNUBBERLESS⑩, LOGIC LEVEL & STANDARD; SNUBBERLESS⑩ ,逻辑电平及标准型号: | BTA06-800B |
厂家: | ST |
描述: | SNUBBERLESS⑩, LOGIC LEVEL & STANDARD |
文件: | 总6页 (文件大小:68K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BTA/BTB06 Series
®
SNUBBERLESS™, LOGIC LEVEL & STANDARD
6A TRIACS
MAIN FEATURES:
A2
Symbol
Value
6
Unit
A
G
I
T(RMS)
A1
V
/V
600 and 800
V
DRM RRM
A2
I
5 to 50
mA
G (Q )
1
DESCRIPTION
A1
A2
Suitable for AC switching operations, the BTA/
BTB06 series can be used as an ON/OFF function
in applications such as static relays, heating
regulation, induction motor starting circuits... or for
phase control in light dimmers, motor speed
controllers,...
A1
A2
G
G
TO-220AB
(BTB06)
TO-220AB Insulated
(BTA06)
The snubberless and logic level versions (BTA/
BTB...W) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. By using an internal ceramic pad,
the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
RMS on-state current (full sine wave)
Value
Unit
I
TO-220AB
Tc = 110°C
Tc = 105°C
t = 20 ms
A
T(RMS)
6
TO-220AB Ins.
F = 50 Hz
I
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
60
63
A
TSM
F = 60 Hz
t = 16.7 ms
²
²
²
tp = 10 ms
21
A s
I t
I t Value for fusing
Critical rate of rise of on-state current
dI/dt
F = 120 Hz
Tj = 125°C
50
A/µs
I
= 2 x I , tr ≤ 100 ns
G
GT
I
Peak gate current
tp = 20 µs
Tj = 125°C
Tj = 125°C
4
1
A
GM
P
Average gate power dissipation
W
G(AV)
T
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
stg
°C
T
j
April 2002 - Ed: 5A
1/6
BTA/BTB06 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB06
SW CW
10 35
Unit
TW
BW
I
(1)
mA
V
I - II - III
I - II - III
MAX.
MAX.
MIN.
5
50
GT
V
V
V
= 12 V
R = 30 Ω
L
D
1.3
GT
V
= V
R = 3.3 kΩ I - II - III
0.2
D
DRM
L
GD
V
Tj = 125°C
I
(2)
I = 100 mA
MAX.
MAX.
10
10
15
15
25
30
35
50
60
50
70
80
mA
mA
H
T
I
I
= 1.2 I
I - III
II
G
GT
L
dV/dt (2)
V
= 67 %V
gate open
D
DRM
MIN.
MIN.
20
40
400
1000
V/µs
Tj = 125°C
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C
(dV/dt)c = 10 V/µs Tj = 125°C
2.7
1.2
-
3.5
2.4
-
-
-
-
-
A/ms
Without snubber
Tj = 125°C
3.5
5.3
■ STANDARD (4 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB06
Unit
C
B
I
(1)
I - II - III
IV
25
50
50
100
mA
G
MAX.
V
V
= 12 V
R = 30 Ω
D
L
V
ALL
ALL
MAX.
MIN.
1.3
0.2
V
V
GT
V
= V
R = 3.3 kΩ Tj = 125°C
GD
D
DRM
L
I
(2)
I = 500 mA
MAX.
MAX.
25
40
80
200
5
50
50
mA
mA
H
T
I
I
= 1.2 I
I - III - IV
II
G
GT
L
100
400
10
dV/dt (2)
V
= 67 %V
gate open Tj = 125°C
MIN.
MIN.
V/µs
V/µs
D
DRM
(dV/dt)c (2) (dI/dt)c = 2.7 A/ms
Tj = 125°C
STATIC CHARACTERISTICS
Symbol
Test Conditions
Value
Unit
V (2)
I
= 5.5 A
tp = 380 µs
Tj = 25°C
MAX.
1.55
0.85
60
V
V
T
TM
V
(2)
Threshold voltage
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
to
R (2)
Dynamic resistance
mΩ
µA
mA
d
I
I
V
= V
RRM
5
DRM
RRM
DRM
MAX.
1
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
2/6
BTA/BTB06 Series
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
R
Junction to case (AC)
TO-220AB
1.8
°C/W
th(j-c)
TO-220AB Insulated
2.7
R
Junction to ambient
TO-220AB
TO-220AB Insulated
°C/W
th(j-a)
60
PRODUCT SELECTOR
Part Number
Voltage (xxx)
Package
Sensitivity
Type
600 V
800 V
BTA/BTB06-xxxB
BTA/BTB06-xxxBW
BTA/BTB06-xxxC
BTA/BTB06-xxxCW
BTA/BTB06-xxxSW
BTA/BTB06-xxxTW
X
X
X
X
X
X
X
X
X
X
X
X
50 mA
50 mA
25 mA
35 mA
10 mA
5 mA
Standard
Snubberless
Standard
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
Snubberless
Logic level
Logic level
BTB: non insulated TO-220AB package
ORDERING INFORMATION
BT A 06 - 600 BW (RG)
TRIAC
SERIES
PACKING MODE
Blank: Bulk
RG:Tube
SENSITIVITY & TYPE
B: 50mA STANDARD
BW: 50mA SNUBBERLESS
C: 25mA STANDARD
CW: 35mA SNUBBERLESS
SW: 10mA LOGIC LEVEL
TW: 5mA LOGIC LEVEL
INSULATION:
A: insulated
B: non insulated
VOLTAGE:
600: 600V
800: 800V
CURRENT: 6A
OTHER INFORMATION
Part Number
Base
Weight
Packing
mode
Marking
quantity
BTA/BTB06-xxxyz
BTA/BTB06-xxxyz
BTA/BTB06-xxxyz
2.3 g
2.3 g
250
50
Bulk
BTA/BTB06-xxxyzRG
Tube
Note: xxx = voltage, y = sensitivity, z = type
3/6
BTA/BTB06 Series
Fig. 1: Maximum power dissipation versus RMS
Fig. 2: RMS on-state current versus case
on-state current (full cycle).
temperature (full cycle).
P (W)
IT(RMS) (A)
8
7
6
5
4
3
2
7
BTB
6
BTA
5
4
3
2
1
IT(RMS)(A)
1
0
Tc(°C)
0
0
25
50
75
100
125
0
1
2
3
4
5
6
Fig. 3: Relative variation of thermal impedance
Fig. 4: On-state characteristics (maximum
versus pulse duration.
values).
ITM (A)
K=[Zth/Rth]
100
1E+0
Tj max.
Vto = 0.85 V
Rd = 60 mΩ
Tj=Tj max
Zth(j-c)
1E-1
10
Zth(j-a)
VTM(V)
tp(s)
1E-2
1
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 5: Surge peak on-state current versus
Fig. 6: Non-repetitive surge peak on-state
number of cycles.
current for
a
sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A), I²t (A²s)
ITSM (A)
1000
70
Tj initial=25°C
60
t=20ms
dI/dt limitation:
50A/µs
One cycle
50
ITSM
Non repetitive
Tj initial=25°C
40
100
30
Repetitive
Tc=105°C
20
I²t
tp (ms)
10
Number of cycles
10
0
0.01
0.10
1.00
10.00
1
10
100
1000
4/6
BTA/BTB06 Series
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 8-1: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values). Snubberless & Logic Level Types
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.5
2.4
2.2
2.0
1.8
2.0
IGT
1.6
1.4
TW
1.5
SW
BW/CW
1.2
IH & IL
1.0
0.8
0.6
0.4
1.0
0.5
(dV/dt)c (V/µs)
Tj(°C)
40 60
0.2
0.0
0.0
-40 -20
0.1
1.0
10.0
100.0
0
20
80 100 120 140
Fig. 8-2: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values). Standard Types
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
6
2.0
1.8
C
5
4
3
2
1.6
1.4
B
1.2
1.0
0.8
0.6
0.4
1
0.2
0.0
(dV/dt)c (V/µs)
Tj(°C)
0
0.1
1.0
10.0
100.0
0
25
50
75
100
125
5/6
BTA/BTB06 Series
PACKAGE MECHANICAL DATA
TO-220AB / TO-220AB Ins.
DIMENSIONS
B
REF.
Millimeters
Inches
C
b2
Min. Typ. Max. Min. Typ. Max.
A
a1
a2
B
15.20
15.90 0.598
0.625
L
3.75
0.147
F
I
13.00
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.75
14.00 0.511
10.40 0.393
0.88 0.024
1.32 0.048
4.60 0.173
0.70 0.019
2.72 0.094
2.70 0.094
6.60 0.244
3.85 0.147
0.551
0.409
0.034
0.051
0.181
0.027
0.107
0.106
0.259
0.151
A
b1
b2
C
l4
c1
c2
e
c2
a1
l3
l2
a2
F
I
I4
L
15.80 16.40 16.80 0.622 0.646 0.661
b1
2.65
1.14
1.14
2.95 0.104
1.70 0.044
1.70 0.044
0.116
0.066
0.066
M
c1
l2
l3
M
e
2.60
0.102
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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