BFR99 [STMICROELECTRONICS]

ABSOLUTE MAXIMUM RATINGS; 绝对最大额定值
BFR99
型号: BFR99
厂家: ST    ST
描述:

ABSOLUTE MAXIMUM RATINGS
绝对最大额定值

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中文:  中文翻译
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BFR99  
DESCRIPTION  
TheBFR99 is asiliconplanar epitaxial PNPtransistor  
in Jedec TO-72 metal case, particularly designed for  
wide band common-emitter linear amplifier applica-  
tions up to 1GHz. It features high fT, low reverse ca-  
pacitance, good cross-modulation properties and  
low noise.  
TO-72  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector–base Voltage (IE = 0)  
Value  
– 25  
– 25  
– 3  
Unit  
V
V
Collector–emitter Voltage (IB = 0)  
Emitter–base Voltage (IC = 0)  
Collector Current  
V
– 50  
mA  
at Tamb 25 °C  
at Tcase 25 °C  
Pto t  
Total Power Dissipation  
225  
360  
mW  
mW  
Tstg, Tj  
Storage and Junction Temperature  
– 55 to 200  
°C  
October 1988  
1/4  
BFR99  
THERMAL DATA  
Rth j–case Thermal Resistance Junction–case  
Max  
Max  
486  
777  
°C/W  
°C/W  
Rth j–amb  
Thermal Resistance Junction–ambient  
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
VCB = – 15 V  
Min.  
Typ.  
Max.  
Unit  
ICBO  
Collector Cutoff Current  
(IE = 0)  
– 100  
nA  
V(BR)CBO  
VCEO(sus)  
V(BR)EBO  
VBE  
Collector–base Breakdowm  
Voltage (IE = 0)  
IC = – 100 µA  
– 25  
– 25  
– 3  
V
V
*
Collector–emitter Sustaining  
Voltage (IB = 0)  
IC = – 5 mA  
Emitter–base Breakdown  
Voltage (IC = 0)  
IE = – 10 µA  
V
V
Base–emitter Voltage  
DC Current Gain  
IC = – 10 mA VCE = – 10 V  
– 0.75  
hFE  
*
IC = – 1 mA  
IC = – 10 mA VCE = – 10 V  
IC = – 20 mA VCE = – 10 V  
VCE = – 10 V  
75  
80  
25  
20  
fT  
Transition Frequency  
Reverse Capacitance  
Noise Figure  
IC = – 10 mA VCE = – 15 V  
f = 200 MHz  
2
GHz  
pF  
Cre  
NF  
IC = 0  
VCE = – 15 V  
0.4  
f = 1 MHz  
IC = – 3 mA  
VCE = – 15 V  
Rg = 50 Ω  
f = 200 MHz  
f = 800 MHz  
2.5  
3.5  
dB  
dB  
5
IC = – 10 mA VCE = – 15 V  
Rg = 50 Ω  
f = 200 MHz  
f = 800 MHz  
3
4
dB  
dB  
*
Pulsed : pulse duration = 300µs, duty cycle = 1%.  
2/4  
BFR99  
TO-72 MECHANICAL DATA  
mm  
inch  
TYP.  
0.500  
DIM.  
MIN.  
TYP.  
MAX.  
MIN.  
MAX.  
A
B
D
E
F
G
H
I
12.7  
0.49  
5.3  
4.9  
5.8  
0.019  
0.208  
0.193  
0.228  
2.54  
0.100  
1.2  
0.047  
0.045  
1.16  
L
45o  
45o  
D
A
G
I
H
L
C
0016198  
3/4  
BFR99  
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the  
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No  
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned  
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.  
SGS-THOMSON Microelectronicsproducts arenot authorizedfor use as criticalcomponents in life supportdevices or systems without express  
written approval of SGS-THOMSON Microelectonics.  
1994 SGS-THOMSON Microelectronics - All Rights Reserved  
SGS-THOMSON Microelectronics GROUP OF COMPANIES  
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -  
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A  
4/4  

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