BFR99 [STMICROELECTRONICS]
ABSOLUTE MAXIMUM RATINGS; 绝对最大额定值型号: | BFR99 |
厂家: | ST |
描述: | ABSOLUTE MAXIMUM RATINGS |
文件: | 总4页 (文件大小:46K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BFR99
DESCRIPTION
TheBFR99 is asiliconplanar epitaxial PNPtransistor
in Jedec TO-72 metal case, particularly designed for
wide band common-emitter linear amplifier applica-
tions up to 1GHz. It features high fT, low reverse ca-
pacitance, good cross-modulation properties and
low noise.
TO-72
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector–base Voltage (IE = 0)
Value
– 25
– 25
– 3
Unit
V
V
Collector–emitter Voltage (IB = 0)
Emitter–base Voltage (IC = 0)
Collector Current
V
– 50
mA
at Tamb ≤ 25 °C
at Tcase ≤ 25 °C
Pto t
Total Power Dissipation
225
360
mW
mW
Tstg, Tj
Storage and Junction Temperature
– 55 to 200
°C
October 1988
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BFR99
THERMAL DATA
Rth j–case Thermal Resistance Junction–case
Max
Max
486
777
°C/W
°C/W
Rth j–amb
Thermal Resistance Junction–ambient
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
VCB = – 15 V
Min.
Typ.
Max.
Unit
ICBO
Collector Cutoff Current
(IE = 0)
– 100
nA
V(BR)CBO
VCEO(sus)
V(BR)EBO
VBE
Collector–base Breakdowm
Voltage (IE = 0)
IC = – 100 µA
– 25
– 25
– 3
V
V
*
Collector–emitter Sustaining
Voltage (IB = 0)
IC = – 5 mA
Emitter–base Breakdown
Voltage (IC = 0)
IE = – 10 µA
V
V
Base–emitter Voltage
DC Current Gain
IC = – 10 mA VCE = – 10 V
– 0.75
hFE
*
IC = – 1 mA
IC = – 10 mA VCE = – 10 V
IC = – 20 mA VCE = – 10 V
VCE = – 10 V
75
80
25
20
fT
Transition Frequency
Reverse Capacitance
Noise Figure
IC = – 10 mA VCE = – 15 V
f = 200 MHz
2
GHz
pF
Cre
NF
IC = 0
VCE = – 15 V
0.4
f = 1 MHz
IC = – 3 mA
VCE = – 15 V
Rg = 50 Ω
f = 200 MHz
f = 800 MHz
2.5
3.5
dB
dB
5
IC = – 10 mA VCE = – 15 V
Rg = 50 Ω
f = 200 MHz
f = 800 MHz
3
4
dB
dB
*
Pulsed : pulse duration = 300µs, duty cycle = 1%.
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BFR99
TO-72 MECHANICAL DATA
mm
inch
TYP.
0.500
DIM.
MIN.
TYP.
MAX.
MIN.
MAX.
A
B
D
E
F
G
H
I
12.7
0.49
5.3
4.9
5.8
0.019
0.208
0.193
0.228
2.54
0.100
1.2
0.047
0.045
1.16
L
45o
45o
D
A
G
I
H
L
C
0016198
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BFR99
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedfor use as criticalcomponents in life supportdevices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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