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BCP53 [STMICROELECTRONICS]

MEDIUM POWER AMPLIFIER; 中功率放大器
BCP53
型号： BCP53
厂家： ST    ST
描述：

MEDIUM POWER AMPLIFIER
中功率放大器

放大器 功率放大器
文件： 总4页 (文件大小：74K)
中文：  中文翻译
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BCP52/53  
MEDIUM POWER AMPLIFIER  
ADVANCE DATA  
■
■
SILICON EPITAXIAL PLANAR PNP  
TRANSISTORS  
MINIATURE PLASTIC PACKAGE FOR  
APPLICATION IN SURFACE MOUNTING  
CIRCUITS  
■
■
GENERAL PURPOSE MAINLY INTENDED  
FOR USE IN MEDIUM POWER INDUSTRIAL  
APPLICATION AND FOR AUDIO AMPLIFIER  
OUTPUT STAGE  
NPN COMPLEMENTS ARE BCP55 AND  
BCP56 RESPECTIVELY  
2
3
2
1
SOT-223  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
BCP52  
-60  
BCP53  
-100  
-80  
VCBO  
VCEO  
VCER  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Collector-Emitter Voltage (RBE = 1KΩ)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
V
V
-60  
-60  
-100  
V
-5  
-1  
V
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
-1.5  
A
IB  
-0.1  
A
IBM  
Base Peak Current (tp < ms)  
-0.2  
A
o
Ptot  
Tstg  
Tj  
Total Dissipation at Tc = 25 C  
2
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/4  
October 1997  
BCP52/53  
THERMAL DATA  
Rthj-amb  
Rthj-tab  
•
•
Thermal Resistance Junction-Ambient  
Thermal Resistance Junction-Collecor Tab  
Max  
Max  
62.5  
8
oC/W  
oC/W  
• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm  
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
ICBO  
Collector Cut-off  
Current (IE = 0)  
VCB = -30 V  
VCB = -30 V Tj = 125 C  
-100  
-10  
nA  
µA  
o
V(BR)CBO Collector-Base  
Breakdown Voltage  
(IE = 0)  
IC = -100 µA  
for BCP52  
for BCP53  
-60  
-100  
V
V
V(BR)CEO Collector-Emitter  
Breakdown Voltage  
(IB = 0)  
IC = -20 mA  
for BCP52  
for BCP53  
-60  
-80  
V
V
V(BR)CER Collector-Emitter  
Breakdown Voltage  
(RBE = 1 KΩ)  
IC = -100 µA  
for BCP52  
for BCP53  
-60  
-100  
V
V
V(BR)EBO Emitter-Base  
Breakdown Voltage  
(IC = 0)  
IC = -10 µA  
-5  
V
VCE(sat)  
VBE(on)  
hFE  
Collector-Emitter  
Saturation Voltage  
IC = -500 mA IB = -50 mA  
IC = -500 mA VCE = -2 V  
-0.5  
-1  
V
V
Base-Emitter On  
Voltage  
DC Current Gain  
IC = -5 mA  
VCE = -2 V  
25  
40  
63  
IC = -150 mA VCE = -2 V for Gr. 6  
IC = -150 mA VCE = -2 V for Gr. 10  
IC = -150 mA VCE = -2 V for Gr. 16 100  
100  
160  
250  
IC = -500 mA VCE = -2 V  
25  
fT  
Transition Frequency  
IC = -10 mA VCE = -5 V f = 35 MHz  
50  
MHz  
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %  
2/4  
BCP52/53  
SOT-223 MECHANICAL DATA  
mm  
mils  
TYP.  
90.6  
181.1  
15.7  
25.6  
63  
DIM.  
MIN.  
2.27  
4.57  
0.2  
TYP.  
2.3  
MAX.  
2.33  
4.63  
0.6  
MIN.  
89.4  
179.9  
7.9  
MAX.  
91.7  
a
b
4.6  
182.3  
23.6  
c
0.4  
d
0.63  
1.5  
0.65  
1.6  
0.67  
1.7  
24.8  
59.1  
26.4  
e1  
e4  
f
66.9  
0.32  
3.1  
12.6  
2.9  
0.67  
6.7  
3
114.2  
26.4  
118.1  
27.6  
122.1  
28.7  
g
0.7  
7
0.73  
7.3  
l1  
l2  
L
263.8  
137.8  
248  
275.6  
137.8  
255.9  
287.4  
145.7  
263.8  
3.5  
3.5  
6.5  
3.7  
6.3  
6.7  
L
l2  
d
a
e4  
c
b
f
C
C
B
E
g
P008B  
3/4  
BCP52/53  
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the  
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No  
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned  
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.  
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express  
written approval of SGS-THOMSON Microelectonics.  
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved  
SGS-THOMSON Microelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -  
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A  
.
4/4  

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