BC847C [STMICROELECTRONICS]
SMALL SIGNAL NPN TRANSISTORS; 小信号NPN晶体管![BC847C](http://pdffile.icpdf.com/pdf1/p00095/img/icpdf/BC847C_503400_icpdf.jpg)
型号: | BC847C |
厂家: | ![]() |
描述: | SMALL SIGNAL NPN TRANSISTORS |
文件: | 总5页 (文件大小:49K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BC847B
BC847C
®
SMALL SIGNAL NPN TRANSISTORS
PRELIMINARY DATA
Type
Marking
BC847B
BC847C
1F
1G
■
■
SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
MINIATURE SOT-23 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
TAPE AND REEL PACKING
■
■
BC847B - THE PNP COMPLEMENTARY
TYPE IS BC857B
SOT-23
APPLICATIONS
■
WELL SUITABLE FOR PORTABLE
EQUIPMENT
■
SMALL LOAD SWITCH TRANSISTORS
WITH HIGH GAIN AND LOW SATURATION
VOLTAGE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
50
Unit
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
V
V
45
6
V
100
mA
mA
mW
oC
oC
ICM
Collector Peak Current
200
o
Ptot
Total Dissipation at TC = 25 C
250
Tstg
Storage Temperature
-65 to 150
150
Tj
Max. Operating Junction Temperature
1/4
June 2002
BC847B / BC847C
THERMAL DATA
Rthj-amb
•
Thermal Resistance Junction-Ambient
Max
500
oC/W
2
• Device mounted on a PCB area of 1 cm .
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCB = 30 V
VCB = 30 V
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
15
5
nA
µA
o
TC = 150 C
IEBO
Emitter Cut-off Current VEB = 5 V
(IC = 0)
100
nA
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
50
45
6
V
IC = 10 µA
IC = 2 mA
IE = 10 µA
V(BR)CEO Collector-Emitter
Breakdown Voltage
(IB = 0)
V
V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
VCE(sat)
VBE(sat)
VBE(on)
hFE
Collector-Emitter
Saturation Voltage
IC = 10 mA
IC = 100 mA
IB = 0.5 mA
IB = 5 mA
0.09
0.2
0.25
0.6
V
V
Base-Emitter
Saturation Voltage
IC = 10 mA
IC = 100 mA
IB = 0.5 mA
IB = 5 mA
0.7
0.9
V
V
Base-Emitter On
Voltage
IC = 2 mA
IC = 10 mA
VCE = 5 V
VCE = 5 V
0.58
0.66
0.7
0.77
V
V
DC Current Gain
IC = 10 µA
for BC847B
for BC847C
IC = 2 mA
VCE = 5 V
150
270
VCE = 5 V
200
420
290
520
450
800
for BC847B
for BC847C
fT
Transition Frequency
IC = 10 mA VCE = 5 V f = 100MHz
IE = 0 VCB = 10 V f = 1 MHz
100
MHz
pF
CCBO
Collector-Base
Capacitance
2.5
2
NF
Noise Figure
VCE = 5 V IC = 0.2 mA f = 1KHz
10
dB
∆f = 200 Hz RG = 2 KΩ
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
2/4
BC847B / BC847C
SOT-23 MECHANICAL DATA
mm
mils
TYP.
DIM.
MIN.
0.85
0.65
1.20
2.80
0.95
1.9
TYP.
MAX.
1.1
MIN.
33.4
25.6
47.2
110.2
37.4
74.8
82.6
14.9
11.8
0
MAX.
43.3
37.4
55.1
118
A
B
C
D
E
F
0.95
1.4
3
1.05
2.05
2.5
41.3
80.7
98.4
18.8
23.6
3.9
G
H
L
2.1
0.38
0.3
0.48
0.6
M
N
O
0
0.1
0.3
0.65
0.17
11.8
3.5
25.6
6.7
0.09
0044616/B
3/4
BC847B / BC847C
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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4/4
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