BC847C [STMICROELECTRONICS]

SMALL SIGNAL NPN TRANSISTORS; 小信号NPN晶体管
BC847C
型号: BC847C
厂家: ST    ST
描述:

SMALL SIGNAL NPN TRANSISTORS
小信号NPN晶体管

晶体 晶体管 光电二极管 放大器
文件: 总5页 (文件大小:49K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BC847B  
BC847C  
®
SMALL SIGNAL NPN TRANSISTORS  
PRELIMINARY DATA  
Type  
Marking  
BC847B  
BC847C  
1F  
1G  
SILICON EPITAXIAL PLANAR NPN  
TRANSISTORS  
MINIATURE SOT-23 PLASTIC PACKAGE  
FOR SURFACE MOUNTING CIRCUITS  
TAPE AND REEL PACKING  
BC847B - THE PNP COMPLEMENTARY  
TYPE IS BC857B  
SOT-23  
APPLICATIONS  
WELL SUITABLE FOR PORTABLE  
EQUIPMENT  
SMALL LOAD SWITCH TRANSISTORS  
WITH HIGH GAIN AND LOW SATURATION  
VOLTAGE  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
50  
Unit  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
V
V
45  
6
V
100  
mA  
mA  
mW  
oC  
oC  
ICM  
Collector Peak Current  
200  
o
Ptot  
Total Dissipation at TC = 25 C  
250  
Tstg  
Storage Temperature  
-65 to 150  
150  
Tj  
Max. Operating Junction Temperature  
1/4  
June 2002  
BC847B / BC847C  
THERMAL DATA  
Rthj-amb  
Thermal Resistance Junction-Ambient  
Max  
500  
oC/W  
2
Device mounted on a PCB area of 1 cm .  
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
VCB = 30 V  
VCB = 30 V  
Min.  
Typ.  
Max.  
Unit  
ICBO  
Collector Cut-off  
Current (IE = 0)  
15  
5
nA  
µA  
o
TC = 150 C  
IEBO  
Emitter Cut-off Current VEB = 5 V  
(IC = 0)  
100  
nA  
V(BR)CBO Collector-Base  
Breakdown Voltage  
(IE = 0)  
50  
45  
6
V
IC = 10 µA  
IC = 2 mA  
IE = 10 µA  
V(BR)CEO Collector-Emitter  
Breakdown Voltage  
(IB = 0)  
V
V
V(BR)EBO Emitter-Base  
Breakdown Voltage  
(IC = 0)  
VCE(sat)  
VBE(sat)  
VBE(on)  
hFE  
Collector-Emitter  
Saturation Voltage  
IC = 10 mA  
IC = 100 mA  
IB = 0.5 mA  
IB = 5 mA  
0.09  
0.2  
0.25  
0.6  
V
V
Base-Emitter  
Saturation Voltage  
IC = 10 mA  
IC = 100 mA  
IB = 0.5 mA  
IB = 5 mA  
0.7  
0.9  
V
V
Base-Emitter On  
Voltage  
IC = 2 mA  
IC = 10 mA  
VCE = 5 V  
VCE = 5 V  
0.58  
0.66  
0.7  
0.77  
V
V
DC Current Gain  
IC = 10 µA  
for BC847B  
for BC847C  
IC = 2 mA  
VCE = 5 V  
150  
270  
VCE = 5 V  
200  
420  
290  
520  
450  
800  
for BC847B  
for BC847C  
fT  
Transition Frequency  
IC = 10 mA VCE = 5 V f = 100MHz  
IE = 0 VCB = 10 V f = 1 MHz  
100  
MHz  
pF  
CCBO  
Collector-Base  
Capacitance  
2.5  
2
NF  
Noise Figure  
VCE = 5 V IC = 0.2 mA f = 1KHz  
10  
dB  
f = 200 Hz RG = 2 KΩ  
Pulsed: Pulse duration = 300 µs, duty cycle 2 %  
2/4  
BC847B / BC847C  
SOT-23 MECHANICAL DATA  
mm  
mils  
TYP.  
DIM.  
MIN.  
0.85  
0.65  
1.20  
2.80  
0.95  
1.9  
TYP.  
MAX.  
1.1  
MIN.  
33.4  
25.6  
47.2  
110.2  
37.4  
74.8  
82.6  
14.9  
11.8  
0
MAX.  
43.3  
37.4  
55.1  
118  
A
B
C
D
E
F
0.95  
1.4  
3
1.05  
2.05  
2.5  
41.3  
80.7  
98.4  
18.8  
23.6  
3.9  
G
H
L
2.1  
0.38  
0.3  
0.48  
0.6  
M
N
O
0
0.1  
0.3  
0.65  
0.17  
11.8  
3.5  
25.6  
6.7  
0.09  
0044616/B  
3/4  
BC847B / BC847C  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a trademark of STMicroelectronics  
© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
4/4  
WWW.ALLDATASHEET.COM  
Copyright © Each Manufacturing Company.  
All Datasheets cannot be modified without permission.  
This datasheet has been download from :  
www.AllDataSheet.com  
100% Free DataSheet Search Site.  
Free Download.  
No Register.  
Fast Search System.  
www.AllDataSheet.com  

相关型号:

BC847C(SOT-23)

Transistor
JCST

BC847C,215

TRANS NPN 45V 0.1A SOT23
ETC

BC847C,235

TRANS NPN 45V 0.1A SOT23
ETC

BC847C-13

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
DIODES

BC847C-13-F

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23
DIODES

BC847C-1GZ

SOT23 NPN SILICON PLANAR
ZETEX

BC847C-7

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DIODES

BC847C-7-F

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23
DIODES

BC847C-G

Small Signal Transistor
COMCHIP

BC847C-GS08

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
VISHAY

BC847C-GS18

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
VISHAY

BC847C-MR

TRANSISTOR BC847C MINIREEL 500PCS
FAIRCHILD