BAT54SW [STMICROELECTRONICS]
SMALL SIGNAL SCHOTTKY DIODE; 小信号肖特基二极管型号: | BAT54SW |
厂家: | ST |
描述: | SMALL SIGNAL SCHOTTKY DIODE |
文件: | 总5页 (文件大小:55K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BAT54J / W / AW / CW / SW
SMALL SIGNAL SCHOTTKY DIODE
FEATURES AND BENEFITS
K2
NC
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLESWITCHING LOSSES
LOW FORWARD VOLTAGE DROP
SURFACE MOUNT DEVICE
K
A
K
A
K2
NC
K1
A
A
K1
BAT54W
BAT54AW
A2
K2
DESCRIPTION
A2
K1
K
A2
K1
K
Schottky barrier diodes encapsulated either in
SOT-323 or SOD-323 small SMD packages.
A2
A1
K2
A1
A1
Single and double diodes with different pining are
available.
A1
BAT54SW
BAT54CW
SOT-323
A
86
K
BAT54J
SOD-323
ABSOLUTE RATINGS
Symbol
(limiting values)
Parameter
Value
Unit
V
VRRM Repetitive peak reverse voltage
30
0.3
1
IF
Continuousforward current
A
IFSM
Ptot
Surgenon repetitiveforward current
tp=10ms sinusoidal
SOD-323
A
Power dissipation (note 1)
230
mW
Tamb = 25°C
SOT-323
Tstg
Tj
Maximum storage temperaturerange
- 65 to +150
150
°C
°C
°C
Maximum operating junction temperature*
TL
Maximum temperaturefor soldering during 10s
260
Note 1: for double diodes, Ptot is the total dissipationof bothdiodes
dPtot
dTj
1
* :
<
thermal runawayconditionfor a diode on its own heatsink
Rth(j−a)
June 1999 - Ed: 2A
1/5
BAT54J/ W / AW / CW / SW
THERMAL RESISTANCE
Symbol
Parameters
Value
Unit
Rth (j-a) Junction to ambient(*)
SOD-323
SOT-323
550
°C/W
°
C/W
(*) Mounted on epoxy board, with recommended pad layout.
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
Tests conditions
Symbol
Parameters
Min. Typ. Max.
Unit
°
VF *
Forward voltage drop
Tj = 25 C
IF = 0.1 mA
IF = 1 mA
240
320
400
500
900
1
mV
IF = 10 mA
IF = 30 mA
IF = 100 mA
VR = 30 V
°
µ
A
IR **
Reverse leakage current Tj = 25 C
Tj = 100°C
100
Pulse test : * tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
DYNAMIC CHARACTERISTICS (Tj = 25 °C)
Symbol
Parameters
Junction
Tests conditions
Min.
Typ. Max. Unit
°
C
Tj = 25 C
VR = 1 V F = 1 MHz
10
pF
capacitance
trr
Reverse recovery
time
IF = 10 mA IR = 10 mA Tj = 25°C
Irr = 1 mA RL = 100 Ω
5
ns
Fig. 1-2:
current (typical values, high level).
Forward voltage drop versus forward
Fig. 1-1: Forward voltage drop versus forward
current (typical values, low level).
IFM(A)
5E-1
IFM(A)
2.00E-2
1.80E-2
Tj=100°C
Tj=100°C
1.60E-2
1.40E-2
1E-1
Tj=25°C
1.20E-2
Tj=50°C
Tj=50°C
1.00E-2
8.00E-3
6.00E-3
4.00E-3
1E-2
Tj=25°C
2.00E-3
0.00E+0
VFM(V)
VFM(V)
1E-3
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
2/5
BAT54J / W / AW / CW / SW
Fig. 3:
temperature.
Reverse leakage current versus junction
Fig. 2:
Reverse leakage current versus reverse
voltage applied (typicalvalues).
IR(µA)
IR(µA)
1E+2
1E+4
VR=30V
Tj=100°C
1E+3
1E+2
1E+1
1E+0
1E-1
1E-2
1E+1
Tj=50°C
1E+0
Tj=25°C
1E-1
Tj(°C)
VR(V)
1E-2
0
25
50
75
100
125
150
0
5
10
15
20
25
30
Fig. 5:
Relative variation of thermal impedance
Fig. 4:
Junction capacitance versus reverse
junction to ambient versus pulse duration (epoxy
FR4 with recommended pad layout, e(Cu)=35µm)
voltage applied (typical values).
C(pF)
Zth(j-a)/Rth(j-a)
10
1.00
F=1MHz
Tj=25°C
δ = 0.5
δ = 0.2
5
2
0.10
0.01
δ = 0.1
T
Single pulse
tp
=tp/T
δ
tp(s)
VR(V)
1
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
1
2
5
10
20
30
Fig. 6:
Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printedcircuit board FR4, copperthickness:35µm.)
Rth(j-a) (°C/W)
600
P=0.2W
550
500
450
400
350
S(Cu) (mm )
300
0
5
10 15 20 25 30 35 40 45 50
3/5
BAT54J/ W / AW / CW / SW
PACKAGE MECHANICAL DATA
SOT-323
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
REF.
A
A1
A
A1
b
0.8
0.0
1.1 0.031
0.1 0.0
0.043
0.004
0.016
0.010
D
b
0.25
0.1
0.4 0.010
0.26 0.004
c
D
E
e
1.8
2.0
2.2 0.071 0.079 0.086
1.15 1.25 1.35 0.045 0.049 0.053
L
0.65
2.1
0.026
H
L
1.8
0.1
0
2.4 0.071 0.083 0.094
0.3 0.004 0.008 0.012
H
E
0.2
θ
θ
30°
0
30°
c
e
4/5
BAT54J / W / AW / CW / SW
PACKAGE MECHANICAL DATA
SOD-323
DIMENSIONS
Millimeters Inches
H
A1
REF.
b
Min.
Max.
1.17
0.1
Min.
Max.
E
A
A1
b
0.046
0.004
0.017
0.01
0
0
0.25
0.1
0.44
0.25
1.8
0.01
A
D
c
0.004
0.06
D
1.52
1.11
2.3
0.071
0.057
0.106
0.02
c
Q1
E
1.45
2.7
0.044
0.09
H
L
0.1
0.46
0.41
0.004
0.004
L
Q1
0.1
0.016
Orderingtype
BAT54W
Marking
D73
Package
SOT-323
SOT-323
SOT-323
SOT-323
SOD-323
Weight
0.006g
0.006g
0.006g
0.006g
0.005g
Base qty
3000
Deliverymode
Tape& reel
Tape& reel
Tape& reel
Tape& reel
Tape& reel
BAT54AW
BAT54CW
BAT54SW
BAT54J
D74
3000
D77
3000
D78
3000
86
3000
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
5/5
相关型号:
BAT54SW-T1-LF
Rectifier Diode, Schottky, 2 Element, 0.2A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
WTE
©2020 ICPDF网 联系我们和版权申明