BAT46 [STMICROELECTRONICS]
SMALL SIGNAL SCHOTTKY DIODE; 小信号肖特基二极管
| 型号： | BAT46 |
| 厂家： | 
ST |
| 描述： | SMALL SIGNAL SCHOTTKY DIODE |
| 文件： | 总4页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAT46
®
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
DO 35
General purpose, metalto silicon diode featuring
high breakdown voltage low turn-on voltage.
(Glass)
ABSOLUTE RATINGS (limiting values)
Symbol
VRRM
IF
Parameter
Repetitive Peak Reverse Voltage
Value
Unit
V
100
150
Forward Continuous Current*
mA
T = 25 C
°
a
tp 1s
≤
IFRM
Repetitive Peak Forward Current*
350
mA
0.5
δ ≤
IFSM
Ptot
Surge non Repetitive Forward Current*
Power Dissipation*
750
150
mA
tp 10ms
=
TI = 80°C
mW
Tstg
Tj
Storage and Junction Temperature Range
- 65 to + 150
- 65 to + 125
C
C
°
TL
Maximum Temperature for Soldering during 10s at 4mm from Case
230
°
THERMAL RESISTANCE
Symbol
Test Conditions
Value
Unit
C/W
Rth(j-a)
Junction-ambient*
300
°
* On infinite heatsink with 4mm lead length.
August 1999 Ed: 1A
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BAT46
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
VBR
100
V
T = 25 C
°
j
IF = 10µA
VF *
0.25
0.45
1
V
T = 25 C
°
j
IF = 0.1mA
IF = 10mA
IF = 250mA
VR = 1.5V
T = 25 C
°
j
T = 25 C
°
j
IR *
0.5
5
T = 25 C
A
µ
°
j
Tj = 60°C
Tj = 25°C
0.8
VR = 10V
VR = 50V
VR = 75V
Tj = 60°C
Tj = 25°C
Tj = 60°C
Tj = 25°C
Tj = 60°C
7.5
2
15
5
20
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
VR = 0V
Min.
Typ.
10
6
Max.
Unit
C
pF
T = 25 C
°
j
f = 1Mhz
T = 25 C
VR = 1V
°
j
* Pulse test: tp ≤ 300µs δ < 2%.
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BAT46
Fig. 1-1: Forward voltage drop versus forward cur-
rent (low level, typical values)
Fig. 1-2: Forward voltage drop versus forward cur-
rent (high level, typical values)
IFM(A)
IFM(mA)
20
5E-1
18
16
14
12
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
1E-1
10
8
6
4
2
VFM(V)
VFM(V)
0
1E-2
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Fig. 2: Leakage current versus reverse voltage ap-
plied (typical values)
Fig. 3: Leakage current versus junction temperature
(typical values)
IR(µA)
IR(µA)
1E+3
1E+3
Tj=125°C
VR=75V
Tj=100°C
1E+2
1E+2
1E+1
1E+0
Tj=75°C
1E+1
Tj=50°C
1E+0
Tj=25°C
VR(V)
Tj(°C)
1E-1
1E-1
0
10 20 30 40 50 60 70 80 90 100
0
25
50
75
100
125
Fig.4: Junction capacitance versusreverse voltage
applied (typical values)
C(pF)
10
F=1MHz
Tj=25°C
5
2
VR(V)
1
1
10
100
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BAT46
PACKAGE MECHANICAL DATA
DO 35 Glass
C
A
C
O/ B
DIMENSIONS
Millimeters
REF.
Inches
Min.
Min.
Max.
4.50
2.00
Max.
0.177
0.079
A
B
C
D
3.05
1.53
0.120
0.060
0.500
0.018
O
/
D
O
/
D
12.7
0.458
0.558
0.022
Cooling method : by convection and conduction
Marking: clear, ring at cathode end.
Weight: 0.15g
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for useas critical components inlifesupport devices or systems withoutexpress writtenapproval
of STMicroelectronics.
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© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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