B16NK60Z [STMICROELECTRONICS]
N-CHANNEL 600V - 0.38 - 14 A TO-220 /I2SPAK/TO-247 Zener - Protecdet SuperMESH™ MOSFET; N沟道600V - 0.38 - 14 A TO - 220 / I2SPAK / TO- 247齐纳 - Protecdet超网™ MOSFET型号: | B16NK60Z |
厂家: | ST |
描述: | N-CHANNEL 600V - 0.38 - 14 A TO-220 /I2SPAK/TO-247 Zener - Protecdet SuperMESH™ MOSFET |
文件: | 总10页 (文件大小:235K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STP16NK60Z - STB16NK60Z-S
STW16NK60Z
N-CHANNEL 600V - 0.38 Ω - 14 A TO-220 /I2SPAK/TO-247
Zener - Protecdet SuperMESH™ MOSFET
TARGET SPECIFICATION
Table 1: General Features
Figure 1: Package
TYPE
V
R
I
D
Pw
DSS
DS(on)
STP16NK60Z
STB16NK60Z-S 600 V
STW16NK60Z 600 V
600 V
< 0.42 Ω 14 A 190 W
< 0.42 Ω 14 A 190 W
< 0.42 Ω 14 A 190 W
3
2
1
3
2
1
■ TYPICAL R (on) = 0.38 Ω
DS
2
I SPAK
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING
REPEATIBILITY
TO-220
3
2
1
DESCRIPTION
TO-247
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES
Table 2: Order Codes
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP16NK60Z
P16NK60Z
TO-220
TUBE
2
STB16NK60Z-S
STW16NK60Z
B16NK60Z
W16NK60Z
TUBE
TUBE
I SPAK
TO-247
Rev. 1
September 2005
1/10
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
STP16NK65Z - STB16NK65Z-S - STW16NK60Z
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
600
600
± 30
14
Unit
V
V
DS
Drain-source Voltage (V = 0)
GS
V
DGR
Drain-gate Voltage (R = 20 kΩ)
V
GS
V
GS
Gate- source Voltage
V
I
D
Drain Current (continuous) at T = 25°C
A
C
I
D
Drain Current (continuous) at T = 100°C
8.8
A
C
I
( )
Drain Current (pulsed)
56
A
DM
P
Total Dissipation at T = 25°C
190
1.51
6000
W
W/°C
V
TOT
C
Derating Factor
V
Gate source ESD (HBM-C= 100pF, R= 1.5KΩ)
ESD(G-S)
) Pulse width limited by safe operating area
(1) I ≤ 14 A, di/dt ≤ 200 A/µs, V ≤ V
, T ≤ T
j JMAX.
SD
DD
(BR)DSS
Table 4: Thermal Data
TO-220/ I²SPAK
TO-247
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
0.66
300
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
62.5
50
T
l
Table 5: Avalanche Characteristics
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
14
A
AR
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
360
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
Table 6: GATE-SOURCE ZENER DIODE
Symbol
BV
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
30
V
GSO
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/10
STP16NK60Z - STB16NK60Z-S - STW16NK60Z
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 7: On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
Drain-source
I
D
= 1 mA, V = 0
600
V
(BR)DSS
GS
Breakdown Voltage
Zero Gate Voltage
I
V
V
= Max Rating
= Max Rating, T = 125 °C
1
50
µA
µA
DSS
DS
Drain Current (V = 0)
GS
DS
C
I
Gate-body Leakage
V
GS
= ± 20V
±10
µA
GSS
Current (V = 0)
DS
V
V
V
= V , I = 100 µA
Gate Threshold Voltage
3
3.75
0.38
4.5
V
GS(th)
DS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 7 A
0.42
Ω
DS(on)
GS
D
V
Drain-source
Breakdown Voltage
I
= 1 mA, V = 0
600
Min.
V
(BR)DSS
D
GS
Table 8: Dynamic
Symbol
Parameter
Test Conditions
= 15 V I = 7 A
Typ.
Max.
Unit
g
(1)
Forward Transconductance
V
12
S
fs
DS
, D
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, V = 0
2650
285
62
pF
pF
pF
iss
DS
GS
C
oss
C
rss
C
(*) Equivalent Output
Capacitance
V
V
= 0V, V = 0V to 480V
158
pF
oss eq.
GS
DS
t
t
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
= 480 V, I = 14 A
30
25
70
15
ns
ns
ns
ns
d(on)
DD
D
t
r
R
= 4.7Ω V = 10 V
G
GS
(Resistive Load see, Figure 3)
d(off)
t
f
Q
V
V
= 480V, I = 14 A,
= 10V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
86
17
46
nC
nC
nC
g
DD
D
Q
gs
gd
GS
Q
(*) C
is defined as a constant equivalent capacitance giving the same charging time as C
when V increases from 0 to 80% V
oss DS DSS
oss eq.
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
14
56
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
I
I
= 14 A, V
= 0
GS
Forward On Voltage
1.6
V
SD
SD
t
rr
= 14 A, di/dt = 100 A/µs
= 100 V, T = 25°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
490
5.4
22
ns
µC
A
SD
Q
V
DD
rr
j
I
(see test circuit, Figure 5)
RRM
t
Q
I
= 14 A, di/dt = 100 A/µs
= 100 V, T = 150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
585
7
24
ns
µC
A
rr
SD
V
DD
rr
j
I
(see test circuit, Figure 5)
RRM
I
14
56
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/10
STP16NK65Z - STB16NK65Z-S - STW16NK60Z
Figure 3: Unclamped Inductive Load Test Cir-
cuit
Figure 6: Unclamped Inductive Wafeform
Figure 4: Switching Times Test Circuit For Re-
sistive Load
Figure 7: Gate Charge Test Circuit
Figure 5: Test Circuit For Inductive Load
Switching and Diode Recovery Times
4/10
STP16NK60Z - STB16NK60Z-S - STW16NK60Z
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com
5/10
STP16NK65Z - STB16NK65Z-S - STW16NK60Z
TO-247 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.85
2.20
1.0
MAX.
5.15
MIN.
0.19
MAX.
0.20
A
A1
b
2.60
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.102
0.055
0.094
0.134
0.03
1.40
b1
b2
c
2.0
2.40
3.0
3.40
0.40
19.85
15.45
0.80
D
20.15
15.75
0.793
0.620
E
e
5.45
18.50
5.50
0.214
0.728
0.216
L
14.20
3.70
14.80
4.30
0.560
0.14
0.582
0.17
L1
L2
øP
øR
S
3.55
4.50
3.65
5.50
0.140
0.177
0.143
0.216
6/10
STP16NK60Z - STB16NK60Z-S - STW16NK60Z
TO-220 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
7/10
STP16NK65Z - STB16NK65Z-S - STW16NK60Z
2
I SPAK MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
2.49
0.70
1.14
0.45
1.23
8.95
10.00
4.88
16.7
1.27
13.82
MAX.
4.60
2.69
0.93
1.70
0.60
1.36
9.35
10.40
5.28
17.5
1.4
MIN.
0.173
0.098
0.027
0.045
0.018
0.048
0.352
0.394
0.192
0.657
0.05
MAX.
0.181
0.106
0.037
0.067
0.024
0.053
0.368
0.409
0.208
0.689
0.055
0.568
A
A1
B
B2
C
C2
D
E
G
L
L2
L3
14.42
0.544
8/10
STP16NK60Z - STB16NK60Z-S - STW16NK60Z
Table 10: Revision History
Date
Revision
Description of Changes
06-Jul-2004
1
2
First Release.
Inserted Ecopak indication
06-Sep-2005
9/10
STP16NK65Z - STB16NK65Z-S - STW16NK60Z
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2005 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
10/10
相关型号:
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明