74V1G70 [STMICROELECTRONICS]
SINGLE BUFFER; 单个缓冲区
| 型号： | 74V1G70 |
| 厂家： | 
ST |
| 描述： | SINGLE BUFFER |
| 文件： | 总7页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
74V1G70
SINGLE BUFFER
■
■
HIGH SPEED:tPD =4.3ns (TYP.) atVCC = 5V
LOW POWER DISSIPATION:
I
CC =1 µA (MAX.) at TA =25 oC
■
HIGH NOISEIMMUNITY:
NIH = VNIL =28% VCC (MIN.)
V
S
C
■
■
POWERDOWN PROTECTIONON INPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 8 mA (MIN)
BALANCEDPROPAGATIONDELAYS:
tPLH tPHL
OPERATING VOLTAGERANGE:
VCC (OPR)= 2V to 5.5V
IMPROVED LATCH-UP IMMUNITY
(SOT23-5L)
(SC-70)
ORDER CODE:
74V1G70S 74V1G70C
■
■
■
The internal circuit is composed of 2 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface5V to 3V.
DESCRIPTION
The 74V1G70 is an advanced high-speed CMOS
SINGLE BUFFER fabricated with sub-micron
silicon gate and double-layermetal wiring C2MOS
technology.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/7
October 1999
74V1G70
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
SYMBOL NAME AND FUNCTION
1
2
4
3
5
N.C.
1A
Not Connected
Data Input
1Y
Data Output
GND
VCC
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
A
L
Y
L
H
H
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
VI
Parameter
Value
-0.5 to +7.0
Unit
V
Supply Voltage
DC Input Voltage
-0.5 to +7.0
-0.5 to VCC + 0.5
- 20
V
VO
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
V
IIK
mA
mA
mA
mA
oC
IOK
20
±
IO
± 25
± 50
ICC or IGND DC VCC or Ground Current
Tstg
TL
Storage Temperature
-65 to +150
260
Lead Temperature (10 sec)
oC
AbsoluteMaximum Ratingsarethose values beyond whichdamage tothe device may occur. Functional operation under these condition isnot implied.
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
VI
Parameter
Value
2.0 to 5.5
0 to 5.5
Unit
V
Supply Voltage
Input Voltage
V
VO
Output Voltage
0 to VCC
-40 to +85
V
oC
Top
Operating Temperature
dt/dv
0 to 100
0 to 20
ns/V
ns/V
Input Rise and Fall Time (see note 1) (VCC = 3.3 0.3V)
±
(V CC = 5.0 ± 0.5V)
1)VIN from30% to70%of VCC
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74V1G70
DC SPECIFICATIONS
Symbol
Parameter
Test Conditions
VCC
(V)
Value
TA = 25 oC
Min. Typ. Max. Min. Max.
Unit
-40 to 85 oC
VIH
VIL
High Level Input
Voltage
2.0
3.0 to 5.5
2.0
1.5
1.5
V
V
0.7VCC
0.7VCC
Low Level Input
Voltage
0.5
0.5
3.0 to 5.5
2.0
0.3VCC
0.3VCC
VOH
High Level Output
Voltage
IO=-50 µA
1.9
2.9
2.0
3.0
4.5
1.9
2.9
3.0
I =-50
A
A
µ
µ
O
V
V
4.5
I =-50
O
4.4
4.4
3.0
IO=-4 mA
IO=-8 mA
IO=50 µA
2.58
3.94
2.48
3.8
4.5
VOL
Low Level Output
Voltage
2.0
0.0
0.0
0.0
0.1
0.1
0.1
0.1
3.0
I =50
A
A
µ
µ
O
4.5
I =50
O
0.1
0.1
3.0
IO=4 mA
IO=8 mA
0.36
0.36
±0.1
1
0.44
0.44
±1.0
10
4.5
II
Input Leakage Current
0 to 5.5
5.5
VI = 5.5V or GND
VI = VCC or GND
µA
µA
ICC
Quiescent Supply
Current
AC ELECTRICAL CHARACTERISTICS (Input tr = tf =3 ns)
Symbol
Parameter
Test Condition
Value
TA = 25 oC
Unit
VCC
CL
-40 to 85 oC
(V)
(pF)
Min. Typ. Max. Min. Max.
tPLH
tPHL
Propagation Delay
Time
3.3(*)
3.3(*)
5.0(**)
5.0(**)
15
50
3.9
5.7
3.1
4.3
5.6
8.0
4.1
5.6
1.0
1.0
1.0
1.0
6.8
9.2
4.9
6.4
ns
15
50
(*) Voltagerangeis3.3V ± 0.3V
(**) Voltagerange is 5V± 0.5V
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
Test Conditions
Value
TA = 25 oC
Unit
-40 to 85 oC
Min. Typ. Max. Min. Max.
CIN
Input Capacitance
4
10
10
pF
pF
CPD
Power Dissipation
11
Capacitance (note 1)
1)CPD isdefined as thevalue ofthe IC’sinternal equivalent capacitance whichiscalculated fromthe operating current consumption without load. (Referto
TestCircuit).Average operating current can beobtained bythe followingequation. ICC(opr)= CPD • VCC • fIN + ICC
3/7
74V1G70
TEST CIRCUIT
CL = 15/50 pF or equivalent (includes jig and probe capacitance)
RT = ZOUT ofpulse generator (typically50Ω)
WAVEFORM: PROPAGATION DELAYS
(f=1MHz; 50% duty cycle)
4/7
74V1G70
SOT23-5L MECHANICAL DATA
mm
mils
DIM.
MIN.
0.90
0.00
0.90
0.35
0.09
2.80
2.60
1.50
0.35
TYP.
MAX.
1.45
0.15
1.30
0.50
0.20
3.00
3.00
1.75
0.55
MIN.
35.4
0.0
TYP.
MAX.
57.1
5.9
A
A1
A2
b
35.4
13.7
3.5
51.2
19.7
7.8
C
D
110.2
102.3
59.0
13.7
118.1
118.1
68.8
21.6
E
E1
L
e
0.95
1.9
37.4
74.8
e1
5/7
74V1G70
SC-70 MECHANICAL DATA
mm
mils
DIM.
MIN.
0.80
0.00
0.80
0.15
0.10
1.80
1.80
1.15
0.10
TYP.
MAX.
1.10
0.10
1.00
0.30
0.18
2.20
2.40
1.35
0.30
MIN.
31.5
0.0
TYP.
MAX.
43.3
3.9
A
A1
A2
b
31.5
5.9
39.4
11.8
7.1
C
3.9
D
70.9
70.9
45.3
3.9
86.6
94.5
53.1
11.8
E
E1
L
e
0.65
1.3
25.6
51.2
e1
6/7
74V1G70
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. Thispublication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in lifesupport devices or systems withoutexpress written approval of STMicroelectronics.
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