1N5819U [STMICROELECTRONICS]
Aerospace 45 V power Schottky rectifier;型号: | 1N5819U |
厂家: | ST |
描述: | Aerospace 45 V power Schottky rectifier |
文件: | 总10页 (文件大小:226K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1N5819U
Aerospace 45 V power Schottky rectifier
Datasheet - production data
Description
K
A
This power Schottky rectifier is designed and
packaged to comply with the ESCC5000
specification for aerospace products. It is housed
in a surface mount hermetically sealed LCC2B
package.
K
The 1N5819U is suitable for switching mode
power supplies and high frequency DC to DC
converters such as low voltage high frequency
inverter, free wheeling or polarity protection.
A
Leadless chip carrier 2 (LCC2B)
Features
Aerospace applications
Surface mount hermetic package
High thermal conductivity materials
Very small conduction losses
Negligible switching losses
Extremely fast switching
Low forward voltage drop
Package mass: 0.18 g
Target radiation qualification
– 150 krad (Si) low dose rate
– 3 Mrad (Si) high dose rate
ESCC qualified
(1)
Table 1. Device summary
ESCC
detailed
specification
Lead
finish
Order code
Quality level
EPPL
IF(AV)
VRRM
Tj(max) VF(max)
1N5819UB1
Engineering model Gold
1N5819U01B 5106/021/02
1N5819U02B 5106/021/03
ESCC
ESCC
Gold
yes
yes
1
45
150
0.49
Solder dip
1. Contact ST sales office for information about the specific conditions for products in die form.
December 2015
DocID16006 Rev 5
1/10
This is information on a product in full production.
www.st.com
Characteristics
1N5819U
1
Characteristics
Table 2. Absolute ratings (limiting values)
Parameter
Symbol
Value
Unit
VRRM
IF(RMS)
IF(AV)
IFSM
Tstg
Repetitive peak reverse voltage
45
V
Forward rms current
10
A
Average forward rectified current
Forward surge current
Tc ≥ 142 °Cδ = 0.5
1
25
A
tp = 10 ms sinusoidal
A
Storage temperature range
-65 to +150
150
°C
°C
°C
Tj
Maximum operating junction temperature (1)
Maximum soldering temperature (2)
Tsol
245
dPto
dTj
1
Rth(j-a)
_____
_
t
___
__________
1.
condition to avoid runaway for a diode on its own heatsink
<
2. Maximum duration 5 s. The same package must not be re-soldered until 3 minutes have elapsed.
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case
16
C/W
2/10
DocID16006 Rev 5
1N5819U
Characteristics
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
3.5
20
µA
VR = 45 V
Tj = 100 °C
Tj = -55 °C
Tj = -55 °C
Tj = 25 °C
Tj = 100 °C
mA
VR = 45 V
VR = 40 V
10
µA
15
Reverse leakage
current
(1)
VR = 40 V
IR
3
Tj = 100 °C VR = 35 V
VR = 24 V
Tj = 100 °C VR = 12 V
2.5
1.6
1.2
1
Tj = 100 °C
mA
VR = 6 V
IF = 0.1 A
Tj = 100 °C
Tj = 25 °C
Tj = 25 °C
350
490
450
650
800
(2)
VF
Forward voltage drop Tj = 100 °C IF = 1A
Tj = - 55 °C
mV
Tj = 25 °C
IF = 3.1 A
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 680 µs, δ < 2%
To evaluate the conduction losses use the following equation:
2
P = 0.285 x
+ 0.165 x I
IF(AV)
F (RMS )
Table 5. Dynamic characteristics
Test conditions
Symbo
l
Min Ty Max Uni
Parameter
Diode capacitance
.
p.
.
t
Cj
VR = 5 V, F = 1 MHz
-
-
70 pF
DocID16006 Rev 5
3/10
10
Characteristics
1N5819U
Figure 1. Average forward power dissipation
versus average forward current
Figure 2. Average forward current versus
ambient temperature ( = 0.5)
IF(AV)(A)
PF(AV)(W)
0.9
1.2
0.8
Rth(j-a) = Rth(j-c)
δ = 0.1
δ = 0.2
δ = 0.5
δ = 0.05
δ = 1
1.0
0.8
0.6
0.4
0.7
0.6
0.5
0.4
T
0.3
0.2
0.1
0.0
T
tp
δ =tp / T
0.2
0.0
tp
δ =tp / T
IF(AV)(A)
Tamb(°C)
0.0
0.2
0.4
06
0.8
1.0
1.2
1.4
1.6
0
25
50
75
100
125
150
Figure 3. Non repetitive surge peak forward
current versus overload duration (maximum
values)
Figure 4. Relative variation of thermal
impedance junction to case versus pulse
duration
IM(A)
Zth(j-c) / Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
16
14
12
10
8
TC = 25 °C
TC = 75 °C
6
Single pulse
TC = 125 °C
4
IM
t
2
δ = 0.5
0.1
0.0
tp(s)
t(s)
0
1.E-03
1.E-02
1.E+00
1.E-02
1.E-05
1.E-04
1.E-03
1.E-01
1.E+00
1.E+01
1.E-01
Figure 5. Reverse leakage current versus
reverse voltage applied (typical values)
Figure 6. Forward voltage drop versus forward
current (typical values)
IR(mA)
IFM(A)
1.E+02
10.00
T = 150 °C
j
1.E+01
1.E+00
T = 125 °C
j
T = 100 °C
j
1.00
T = 75 °C
j
1.E-01
1.E-02
1.E-03
1.E-04
Tj = 100 °C
Tj = 25 °C
T = 50 °C
j
0.10
0.01
T = 25 °C
j
Tj = -55 °C
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VR(V)
VFM(V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4/10
DocID16006 Rev 5
1N5819U
Characteristics
Figure 7. Non repetitive surge peak forward current versus number of cycles
IFSM(A)
30
F = 50 Hz
Tj initial = 25 °C
25
20
15
10
5
Number of cycles
0
0
10
100
1000
DocID16006 Rev 5
5/10
10
Package information
1N5819U
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
2.1
Leadless chip carrier 2 (LCC2B) package information
Figure 8. Leadless chip carrier 2 (LCC2B) package outline
A
D
Note 1
B
C
2
1
F
Note 1
Pin 2 Cathode
Pin 1 Anode
Note 1
E
1
E
r1
2
H
G
I
r2
1. The anode is identified by metalization in two top internal angles and the index mark.
6/10
DocID16006 Rev 5
1N5819U
Package information
Table 6. Leadless chip carrier 2 (LCC2B) package mechanical data
Dimensions
Ref.
Millimeters
Typ.
2.23
5.4
Inches
Typ.
Min.
Max.
Min.
Max.
A(1)
B
2.04
2.42
0.080
0.088
0.213
0.143
0.075
-
0.095
5.27
5.6
0.207
0.220
C
D
E
3.49
3.62
1.90
-
3.76
0.137
0.148
1.71
2.09
0.067
0.082
0.48
0.71
0.019
0.028
F
-
-
-
-
-
-
1.4
-
-
-
-
-
-
-
-
-
-
-
-
0.055
0.131
0.072
0.006
0.006
0.008
-
-
-
-
-
-
G
H
I
3.32
1.82
0.15
0.15
0.20
r1
r2
1. Measurement prior to solder coating the mounting pads on bottom of package
DocID16006 Rev 5
7/10
10
Ordering information
1N5819U
3
Ordering information
(1)
Table 7. Ordering information
ESCC detailed
specification
Order code
Package
Lead finish
Marking(2)
EPPL
Mass
Packing
1N5819UB1
1N5819U01B
1N5819U02B
Gold
Gold
1N5819UB1
510602102
510602103
-
5106/021/02
5101/021/03
LCC2B
Y
Y
0.18 g
Waffle pack
Solder dip
1. Contact ST sales office for information about the specific conditions for products in die form.
2. Specific marking only. The full marking includes in addition:
For the engineering models: ST logo, date code, country of origin (FR).
For ESCC flight parts: ST logo, date code, country of origin (FR), ESA logo, serial number of the part within the assembly lot.
4
Other information
4.1
Date code
Date code is structured as describe below:
EM xyywwz
ESCC flight yywwz
Where:
–
–
–
–
x (EM only): 3, assembly location Rennes (France)
yy: last two digits year
ww: week digits
z: lot index in the week
4.2
Documentation
In Table 8 is a summary of the documentation provided with each type of products.
Table 8. Documentation provided with each type of products
Quality level
Documentation
Engineering model
ESCC flight
Certificate of conformance
8/10
DocID16006 Rev 5
1N5819U
Revision history
5
Revision history
Table 9. Document revision history
Changes
Date
Revision
10-Aug-2009
07-Jun-2010
23-Sep-2011
1
2
3
First issue.
Updated ESCC specification codes in Table 1 and Table 7.
Updated Table 1 and Table 7 for ESCC qualification.
Updated Table 1, Table 5 and Table 7 and inserted Other
information.
8-Nov-2013
4
5
04-Dec-2015
Updated Table 7 and reformatted to current standard.
DocID16006 Rev 5
9/10
10
1N5819U
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on
ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2015 STMicroelectronics – All rights reserved
10/10
DocID16006 Rev 5
相关型号:
1N5819UR-1E3
Rectifier Diode, Schottky, 1 Element, 1A, 45V V(RRM), Silicon, DO-213AB, HERMETIC SEALED, GLASS, LL41, MELF-2
MICROSEMI
©2020 ICPDF网 联系我们和版权申明