1534-1 [STMICROELECTRONICS]
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS; 射频与微波晶体管航空电子应用
| 型号： | 1534-1 |
| 厂家： | 
ST |
| 描述： | RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
| 文件： | 总3页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD1534-01
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
.
DESIGNED FOR HIGH POWER PULSED
IFF, DME, TACAN APPLICATIONS
80 WATTS (typ.) IFF 1030 - 1090 MHz
75 WATTS (min.) DME 1025 - 1150 MHz
50 WATTS (typ.) TACAN 960 - 1215 MHz
8.0 dB MIN. GAIN
.
.
.
.
.
.
REFRACTORY GOLD METALLIZATION
.280 4LSL (M115)
EMITTER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
INFINITE LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
epoxy sealed
ORDER CODE
SD1534-01
BRANDING
1534-1
.
.
INPUT MATCHED, COMMON BASE
CONFIGURATION
PIN CONNECTION
DESCRIPTION
The SD1534-01 is a gold metallized silicon, NPN
power transistor designed for applications requiring
high peak power and low duty cycles such as
IFF, DME and TACAN. The SD1534-01 is pack-
aged in the .280" input matched stripline package
resulting in improved broadband performance and
a low thermal resistance.
1. Collector
2. Base
3. Emitter
4. Base
°
= 25 C)
ABSOLUTE MAXIMUM RATINGS (T
case
Symbol
VCBO
VCES
VEBO
IC
Parameter
Value
65
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
65
V
3.5
V
5.5
A
PDISS
TJ
Power Dissipation
218.7
+200
W
°
°
Junction Temperature
Storage Temperature
C
C
TSTG
65 to +150
−
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
0.8
°C/W
1/3
November 1992
SD1534-01
°
= 25 C)
ELECTRICAL SPECIFICATIONS (T
case
STATIC
Value
Symbol
Test Conditions
Unit
Min. Typ.
Max.
—
BVCBO
BVCES
BVEBO
ICES
IC = 10mA
IC = 25mA
IE = 10mA
VCE = 50V
VCE = 5V
IE = 0mA
VBE = 0V
IC = 0mA
IE = 0mA
IC = 100mA
65
65
3.5
—
—
—
—
—
—
V
V
—
—
V
5
mA
—
hFE
10
—
DYNAMIC
Value
Symbol
Test Conditions
Unit
Min.
75
Typ. Max.
POUT
GP
f = 1025 — 1150MHz PIN = 13.0W
f = 1025 — 1150MHz PIN = 13.0W
VCE = 50 V
VCE = 50 V
—
—
—
—
W
7.6
dB
Note:
Pulse Width 10 Sec, Duty Cycle 1%
= µ =
This device is suitable for use under other pulse width/duty cycle conditions.
Please contact the factory for specific applications assistance.
2/3
SD1534-01
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0115
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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