概述
数据手册2SA1615 概述
P TYPE TTANSISTORS P型TTANSISTORS
2SA1615 数据手册
通过下载2SA1615数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载P TYPE TTANSISTORS
-10A
2SA1615, 1615-Z
The 2SA1615 and 1615-Z are available for the large current control in small due to the
low saturation
and are ideal for high-efficiency DC/DC converters due to the fast switching speed.
PIN CONFIGURATION
FEATURE
2SA1615
2SA1615-Z
ꢀ Large current capacity:
Ic(DC): -10A, Ic(pulse) : -15A
ꢀ High hFE and low collector saturation voltage :
hFE = 200 MIN (@Vec = -2V, Ic = -0.5A)
VCE(sat) ≦-0.25V (@Ic = -4.0A, IB = -0.05A)
1.Base 2.Collector 3.Emitter
℃
ABSOLUTE MAXIMUM RATINGS (Ta = 25 )
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
SYMBOL
RATINGS
UNIT
V
V
V
V
Ic
-30
-20
CBO
CEO
EBO
(DC)
V
-10
V
-10
A
Ic (pulse)*
-15
A
I
-0.5
A
B (DC)
Total power dissipation
Total power dissipation
Junction temperature
℃
P (Ta =25 )**
1.0
W
W
℃
℃
T
℃
P (Tc = 25 )
T
15
Tj
150
Storage temperature
Tstg
-55 to +150
≦
*PW 10ms, duty cycle
≦
50%
**Printing board mounted
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page 1
P TYPE TTANSISTORS
-10A
2SA1615, 1615-Z
（
ELECTRICAL CHARACTERISTICS Ta=25
℃）
PARAMETER
Collector cutoff current
Emitter cutoff current
DC current agin
SYMBOL
CONDITIONS
= -20V, IE = 0
MIN TYP
MAX UNIT
I
V
V
V
V
-1.0
-1.0
600
uA
uA
CBO
CB
EB
CE
CE
I
EBO
h
FE1*
h
FE2*
= -8.0, Ic = 0
= -2.0V, Ic = -0.5A
= -2.0V, Ic = -4.0A
200
160
-0.2
-0.9
180
220
80
CC current agin
Collector saturation voltage
Base saturation voltage
Gain bandwidth voltage
Output capacity
V )* Ic = -4.0A, IB = -0.05A
CE(sat
-0.25
-1.2
V
V
V
Ic = -4.0A, IB = -0.05A
BE(sat)*
ft
V
V
= -0.5V, IE = 1.5A
MHz
pF
ns
CE
Cob
ton
= -10V, IE = 0, f = 1.0MHz
CB
Turn-on time
Ic = -5.0A, IB1 = -IB2 = -0.125A
R = 2.0ohm, Vcc = -10V
L
Storage time
tstg
tr
300
60
ns
Fall time
ns
≦
≦
* Pulse test PW 350uA, duty cycle 2%
h
CLADDIFICATION
FE
Marking
hFE2
L
K
200 to 400
300 to 600
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page2
P TYPE TTANSISTORS
-10A
2SA1615, 1615-Z
PACKAGE DRAWING ( unit: mm )
2SA1615
2SA1615-Z
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page3
P TYPE TTANSISTORS
-10A
2SA1615, 1615-Z
TYPICAL CHARACTERISTICS (Ta = 25℃)
Page4
2SA1615 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2SA1615(TO-251) | JCST | Transistor | 获取价格 |
|
| 2SA1615-AZ | RENESAS | PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING | 获取价格 |
|
| 2SA1615-AZ | NEC | Small Signal Bipolar Transistor, 0.01A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon | 获取价格 |
|
| 2SA1615-K | NEC | Small Signal Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, | 获取价格 |
|
| 2SA1615-K-AZ | NEC | 暂无描述 | 获取价格 |
|
| 2SA1615-L | RENESAS | 10000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR | 获取价格 |
|
| 2SA1615-L | NEC | Small Signal Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, | 获取价格 |
|
| 2SA1615-L-AZ | RENESAS | 10mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR | 获取价格 |
|
| 2SA1615-L-AZ | NEC | 10mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR | 获取价格 |
|
| 2SA1615-Z | NEC | PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING | 获取价格 |
|
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