1N4933G [SSE]

GLASS PASSIVATED FAST RECOVERY RECTIFIER; 玻璃钝化快速恢复整流
1N4933G
型号: 1N4933G
厂家: SHANGHAI SUNRISE ELECTRONICS    SHANGHAI SUNRISE ELECTRONICS
描述:

GLASS PASSIVATED FAST RECOVERY RECTIFIER
玻璃钝化快速恢复整流

二极管 快速恢复二极管
文件: 总1页 (文件大小:18K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SHANGHAI SUNRISE ELECTRONICS CO., LTD.  
1N4933G THRU 1N4937G  
TECHNICAL  
SPECIFICATION  
GLASS PASSIVATED  
FAST RECOVERY RECTIFIER  
VOLTAGE: 50 TO 600V CURRENT: 1.0A  
FEATURES  
• Molded case feature for auto insertion  
DO - 41  
• Glass passivated chip  
• Fast switching for high efficiency  
• High current capability  
• Low leakage current  
• High surge capability  
• High temperature soldering guaranteed:  
250oC/10sec/0.375"(9.5mm) lead length  
at 5 lbs tension  
MECHANICAL DATA  
• Terminal: Plated axial leads solderable per  
MIL-STD 202E, method 208C  
• Case: Molded with UL-94 Class V-O  
recognized flame retardant epoxy  
• Polarity: Color band denotes cathode  
• Mounting position: Any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,  
derate current by 20%)  
1N  
1N  
1N  
1N  
1N  
RATINGS  
SYMBOL  
UNITS  
4933G 4934G 4935G 4936G 4937G  
VRRM  
VRMS  
VDC  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
V
V
Maximum DC Blocking Voltage  
100  
Maximum Average Forward Rectified Current  
(9.5mm lead length, at Ta=75oC)  
IF(AV)  
1.0  
A
Peak Forward Surge Current (8.3ms single  
half sine-wave superimposed on rated load)  
Maximum Forward Voltage  
IFSM  
VF  
30.0  
1.2  
A
V
(at rated forward current and 25oC)  
Ta=25oC  
5.0  
100  
Maximum DC Reverse Current  
µA  
µA  
IR  
(at rated DC blocking voltage)  
Maximum Reverse Recovery Time (Note 1)  
Ta=100oC  
200  
trr  
CJ  
nS  
15.0  
Typical Junction Capacitance  
Typical Thermal Resistance  
(Note 2)  
(Note 3)  
pF  
oC/W  
oC  
50.0  
Rθ(ja)  
-65 to +150  
T
STG,TJ  
Storage and Operation Junction Temperature  
Note:  
1.Reverse recovery condition IF=1.0A, VR=30V  
2.Measured at 1.0 MHz and applied voltage of 4.0Vdc  
3.Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C. board mounted  
http://www.sse-diode.com  

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