SRL2020BTS [SSDI]
Rectifier Diode, 1 Phase, 1 Element, 20A, 200V V(RRM), Silicon, HERMETIC SEALED PACKAGE-1;型号: | SRL2020BTS |
厂家: | SOLID STATES DEVICES, INC |
描述: | Rectifier Diode, 1 Phase, 1 Element, 20A, 200V V(RRM), Silicon, HERMETIC SEALED PACKAGE-1 整流二极管 超快速恢复二极管 |
文件: | 总2页 (文件大小:94K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SRL2020 Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
20 AMP
HYPER FAST RECTIFIER
200 Volts
Designer’s Data Sheet
Part Number / Ordering Information 1/
35 nsec
SRL2020 __ __
Screening2/
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└
__ = Not Screened
Features:
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TX = TX Level
TXV = TXV Level
S = S Level
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Replaces JEDEC packages: DO-4, TO-254, and TO-257
Hyper fast recovery
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Low reverse leakage current
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Hermetically sealed void-free construction3/
Monolithic single chip construction
High surge rating
└
Package
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__ = Axial Leaded
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BT = Button Tab
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Voltage
└
Low thermal resistance
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20 = 200 V
Higher voltages available - contact factory
Surface mount replacement for 1N5816 and 1N6659
TX, TXV, and Space level screening available
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Current
└
20 = 20 A
MAXIMUM RATINGS
Symbol
Value
200
Units
Volts
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
VRRM
VRWM
VR
Average Rectified Forward Current
IO
20
Amps
Amps
(Resistive load, 60Hz sine wave, Tc=100°C, TL=55°C )
Peak Surge Current
IFSM
400
(8.3 ms pulse, half sine wave superimposed on Io, allow junction to reach equilibrium
between pulses, TA=25oC)
Junction and Storage Temperature
TJ & TSTG
RJC
-65 to +175
oC
Axial @ 1/8”
Button Tab
6.0
1.5
Maximum Thermal Resistance
Junction to anode terminal
oC/W
Notes:
Axial Leaded (__)
SRL Button (BT)
1/ For ordering information, price, operating curves, and availability, contact
factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ PIND testing not required on void free devices per MIL-PRF-19500.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0155A
DOC
SRL2020 Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS
(Ta = 25 oC unless specified)
Symbol Max
Unit
Instantaneous Forward Voltage Drop
0.95
1.05
10
VF1
VF2
IR1
V
(IF = 20A pulsed)
Instantaneous Forward Voltage Drop
V
(IF = 10A pulsed, TA = -65oC )
Reverse Leakage Current
(Rated VR, pulsed)
A
mA
Reverse Leakage Current
1
IR1
(Rated VR, pulsed, TA = 100oC)
V
(min)
Breakdown Voltage
(IR = 100 A)
200
150
35
BVR
CJ
Junction Capacitance
pF
(VR =10 VDC, f = 1MHz, TA = 25oC)
Reverse Recovery Time
trr
nsec
(IF = 0.5A, IR = 1.0 A, IRR = 0.25A, TA = 25oC)
CASE OUTLINES: Axial Leaded (__)
Dim
A
B
C
D
P1
P2
Min
Max
0.135”
0.190”
—
0.042”
0.155”
0.115”
0.150”
0.500”
0.038”
0.145”
0.125” REF
CASE OUTLINES: Button (BT)
Dim
A
A1
B
C
Min
0.125”
—
—
0.190”
Max
0.150”
0.020”
0.190”
0.210”
C1
P1
P2
P3
P4
T
0.280” REF
0.145”
0.055”
0.090”
0.155”
0.075”
0.110”
0.060” REF
0.008”
0.012”
R
0.015” REF
Notes:
* Diode body profile may differ from the one
shown for illustration
**Dimensions prior to solder dipping
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0155A
DOC
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