SFT503JTX [SSDI]
Power Bipolar Transistor;
| 型号： | SFT503JTX |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Power Bipolar Transistor 晶体 小信号双极晶体管 开关 |
| 文件： | 总2页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFT501 and SFT503
Series
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
5 AMP
200 Volts
HIGH SPEED
PNP Transistor
SFT501 __ __
SFT503 __ __
Screening 2/ __ = Not Screen
TX = TX Level
¦
¦
¦
¦
¦
+
+
TXV = TXV Level
S
= S Level
Features:
· Radiation Tolerant
· Fast Switching
Package 3/
__ = TO-5
· High Frequency, 50 MHz Typical
· BVCEO 150 Volts Min
· High Linear Gain
· Very Low Leakage and Saturation
· 200ºC Operating Temperature
· Gold Eutectic Die Attach
· Designed for Complementary Use with SFT502 and
SFT504
Maximum Ratings
Symbol
Value
Units
VCEO
VCBO
VEBO
IC
150
200
7
Volts
Volts
Volts
Amps
Amps
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Continues Collector Current
Base Current
5
IB
1
10
66.6
W
mW/ºC
Power Dissipation @ TC = 50ºC
Derate above 50ºC
PD
Operating & Storage Temperature
Maximum Thermal Resistance
Top & Tstg
R?JC
-65 to +200
15
ºC
Junction to Case
ºC/W
TO-5
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
B17BH
DATA SHEET #: TR0040C
DOC
SFT501 and SFT503
Series
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic 4/
Symbol
Min
Typ
Max
Units
IC = 50mA
IC = 200µA
IE = 200µA
VCE = 100 V
VCB = 100 V
VEB = 6 V
150
200
7
200
275
13
––
––
Volts
Volts
Volts
µA
Collector – Emitter Breakdown Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Cutoff Current
BVCEO
BVCBO
BVEBO
ICEO
––
––
––
––
––
1.0
500
500
––
nA
Collector – Cutoff Current
ICBO
––
nA
Emitter – Cutoff Current
IEBO
DC Current Gain *
SFT501
VCE = 5V, IC = 50mA
VCE = 5V, IC = 2.5A
VCE = 5V, IC = 5A
VCE = 5V, IC = 50mA
VCE = 5V, IC = 2.5A
VCE = 5V, IC = 5A
20
30
20
50
50
40
––
––
70
––
––
70
––
––
––
––
––
––
––
hFE
SFT503
IC = 2.5A, IB = 250mA
IC = 5.0A, IB = 500mA
––
––
0.35
0.6
0.75
1.5
Collector – Emitter Saturation Voltage *
Base – Emitter Saturation Voltage *
Volts
Volts
VCE(Sat)
VBE(Sat)
IC = 2.5A, IB = 250mA
IC = 5.0A, IB = 500mA
––
––
1.0
1.2
1.3
1.5
VCE = 5V, IC = 0.5A, f = 10MHz
VCB = 10V, IE = 0A, f = 1MHz
VBE = 10V, IC = 0A, f = 1MHz
40
––
––
––
––
––
––
55
130
450
25
––
MHz
pF
Current Gain Bandwidth Product
Output Capacitance
fT
cob
Cib
td
225
600
50
pF
Input Capacitance
Delay Time
nsec
nsec
nsec
nsec
Rise Time
Storage Time
Fall Time
VCC = 50V,
IC = 5A,
IB1 = IB2 = 0.5A
40
250
600
300
tr
320
130
tS
tf
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
PIN ASSIGNMENT
Available Part Numbers:
SFT501
SFT503
Package
TO-5
Pin 1
Emitter
Pin 2
Base
Pin 3 (Case)
Collector
相关型号：
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