SFF75N10ZD [SSDI]
Power Field-Effect Transistor, 75A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254Z, 3 PIN;
| 型号： | SFF75N10ZD |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Power Field-Effect Transistor, 75A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254Z, 3 PIN |
| 文件： | 总2页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFF75N10M
SFF75N10Z
SOLID STATE DEVICES, INC.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
75 AMP
100 VOLTS
0.025 Ω
DESIGNER'S DATA SHEET
FEATURES:
N-CHANNEL
• Rugged construction with poly silicon gate
POWER MOSFET
• low RDS (on) and high transconductance
• Excellent high temperature stability
• Very fast switching speed
TO-254 (M)
TO-254Z (Z)
• Fastrecoveryandsuperiordv/dtperformance
• Increased reverse energy capability
• Low input and transfer capacitance for easy paralleling
• Ceramic seals for improved hermeticity
• Hermetically sealed package
• TX, TXV and Space Level screening available
• Replaces: IXTH75N10Types
MAXIMUM RATINGS
CHARACTERISTIC
Drain to Source Voltage
SYMBOL
VALUE
100
UNIT
Volts
V
DS
Gate to Source Voltage
V
I
+ 20
GS
Volts
Amps
oC
561/
-55 to +150
0.83
Continuous Drain Current
D
Operating and Storage Temperature
Thermal Resistance, Junction to Case
T
&T
op
stg
oC/W
Watts
R
0JC
@ TC = 25oC
@ TC = 55oC
150
Total Device Dissipation
P
D
114
Repetitive Avalanche Energy
EAR
30
mJ
CASE OUTLINE: TO-254 (Sufix M)
CASE OUTLINE: TO-254Z (Sufix Z)
.149
.800
.790
Pin Out:
Ø
.500 MIN
.150
.545
.555
.139
Pin Out:
2x Ø
.545
.535
.140
.535
.500
.140
2x
.125
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
.155
.145
.275
.255
2x
PIN
PIN
3
2
.155
.145
.545
.535
.305
.295
2x
PIN
PIN
3
PIN
1
1.090 .820 .545
1.050 .790 .535
.305
.295
.045
.035
3x Ø
2
1
PIN
.675±.010
.045
.035
3x
.260
.240
.155
.140
.285
.265
SUFFIX: Z
.275
.255
.050
.040
2x
SUFFIX: M
.260
.240
.155
.135
.055
.035
.190
.150
2x
.170
MIN
SUFFIX: MD
SUFFIX: MU
.190
2x
.150
.170
MIN
SUFFIX: ZD
SUFFIX: ZU
.190
2x
.150
Available with Glass or Ceramic Seals. Contact Factory for details.
NOTE: All specifications are subject to change without notification.
DATA SHEET #: F00153F
SCDs for these devices should be reviewed by SSDI prior to release.
SFF75N10M
SFF75N10Z
SOLID STATE DEVICES, INC.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ELECTRICAL CHARACTERISTICS @ T =25oC (Unless Otherwise Specified)
J
SYMBOL
MIN
TYP
MAX
UNIT
V
RATING
Drain to Source Breakdown Voltage
BV
100
-
-
DSS
(VGS =0V, ID = 250µA)
Drain to Source on State Resistance
-
-
-
-
ID = 37.5A
ID = 75 A
0.025
0.030
Ω
R
DS(on)
D(on)
(VGS = 10 V)
On State Drain Current
I
-
A
-
75
(VDS > ID(on) x RDS(on) Max, VGS = 10 V)
Gate Threshold Voltage
V
2
-
4.0
-
V
GS(th)
(VDS = VGS, ID = 4mA)
Forward Transconductance
25
30
gf
Smho
s
(VDS > ID(on) X RDS (on) Max, IDS=50% rated ID)
Zero Gate Voltage Drain Current
-
-
-
-
250
1000
I
DSS
(V = max rated voltage, V = 0 V)
DS
GS
µA
(V = 80% rated V ,V = 0V, T = 125oC)
DS
DS GS
A
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
-
-
-
-
+200
-200
At rated VGS
I
GSS
nA
Total Gate Charge
VGS = 10 V
50% rated VDS
50% rated ID
Qg
-
-
-
-
-
-
-
160
16
260
70
Gate to Source Charge
Gate to Drain Charge
Qgs
nC
Qgd
50
160
VDD=50%
Turn on Delay Time
t
30
40
100
120
80
d (on)
rated VDS
Rise Time
tr
35
50% rated ID
RG=6.2Ω
nsec
Turn off DelayTime
Fall Time
t
100
40
d (off)
tf
VGS=10V
Diode Forvard Voltage
V
SD
-
1.3
1.75
V
(I = rated I , V = 0V, T = 25oC)
S
D
GS
J
TJ =25oC
IF = 10A
di/dt = 100A/µsec
Diode Reverse Recovery Time
Reverse Recovery Charge
t
rr
RR
120
-
200
-
nsec
-
Q
Input Capacitance
VGS =0 Volts
VDS =25 Volts
f =1 MHz
Ciss
-
-
-
4500
1600
800
-
-
-
Output Capacitance
Coss
Crss
pF
Reverse Transfer Capacitance
NOTES:
1/ Maximum current limited by package, die rated at 75A.
NOTE: All specifications are subject to change without notification.
DATA SHEET #: F00153F
SCDs for these devices should be reviewed by SSDI prior to release.
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