SFF55N20MUBTX [SSDI]
Transistor;
| 型号： | SFF55N20MUBTX |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFF55N20M
SFF55N20Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
55 AMP
N-Channel
POWER MOSFET
200 Volts, 0.025 Ω
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
__
__
│
│
__
SFF55N20
│
│
│
└ Screening 2/ __ = Not Screened
TX = TX Level
│
TXV = TXV Level
S = S Level
Features:
│
│
• Extended operating temperature range
• Rugged Construction with Polysilicon Gate
• Low RDS(ON) and High Transconductance
• Excellent High Temperature Stability
│
│
│
│
│
└ Lead Option 3/
__ = Straight Leads
DB = Down Bend
UB = Up Bend
└ Package 3/ M = TO-254
• Very Fast Switching Speed
• Fast Recovery and Superior dV/dt performance
• Increased Reverse Energy Capability
Z = TO-254Z
• Low Input and Transfer Capacitance for Easy Paralleling
• Hermetically Sealed Isolated Power Package
• Ceramic Seals for Improved Hermeticity available
• TX, TXV, and Space Level Screening Available
• Replacement for SFF50N20 Types
Maximum Ratings
Symbol
Value
Units
Drain – Source Voltage
VDS
200
Volts
±20
±30
Continuous
Transient
Gate – Source Voltage
Continues Drain Current
Total Device Dissipation
Avalanche Energy
VGS
Volts
Amps
Watts
mJ
ID
ID max
55
85
Continuous
pulsed
180
145
TC = 25ºC
TC = 55ºC
PD
EAS
EAR
1500
50
Single pulse
reepetitive
Voltage rate of change
dV/dt
Top & Tstg
RθJC
10
-55 to +175
0.83
V/ns
ºC
Operating & Storage Temperature
Thermal Resistance, Junction to Case
ºC/W
NOTES:
TO-254 (M)
TO-254Z (Z)
*
Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening based on MIL-PRF-19500. Screening Flows Available on Request.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
Available Part Numbers:
SFF55N20M; SFF55N20MDB; SFF55N20MUB;
SFF55N20Z; SFF55N20ZDB; SFF55N20ZUB;
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00129F
DOC
SFF55N20M
SFF55N20Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics 3/
Symbol
BVDSS
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
(VGS = 0V, ID = 250µA)
200
––
––
Volts
Drain to Source On State Resistance
(VGS = 10 V, ID= 48 A)
RDS(on)
VGS(th)
IGSS
––
2.5
––
0.025
––
0.030
5.0
Ω
V
Gate Threshold Voltage
(VDS = VGS, ID = 4mA)
Gate to Source Leakage
5
±100
nA
(At Rated VGS
)
Zero Gate Voltage Drain Current
(VGS = 0V)
V
DS = 200 V, TA = 25ºC
––
––
––
––
25
250
IDSS
µA
VDS = 200 V, TA = 150ºC
Forward Transconductance *
(VDS > ID(on) x RDS(on) Max, IDS = 50% Rated ID)
VDS = 10 V, ID = 48 A
gfs
30
50
––
S( )
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 10V
50% Rated VDS
50% Rated ID
Qg
Qgs
Qgd
––
––
––
150
35
85
220
50
120
nC
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
VDD = 100 V
Rated ID
RG = 4.0Ω
VGS = 10V
td(on)
tr
td(off)
tf
––
––
––
––
30
30
75
30
45
45
130
45
nsec
V
Diode Forward Voltage *
(IS = 55 A, VGS = 0V, TJ = 25°C
VSD
––
––
1.5
nsec
µC
Diode Reverse Recovery Time
Reverse Recovery Charge
IF = 25A, di/dt = 100A/µsec,
TJ = 25°C
trr
QRR
––
––
160
3.0
225
––
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
Ciss
Coss
Crss
––
––
––
4850
1025
275
––
––
––
pF
Case Outline: TO-254(M)
Case Outline: TO-254Z (Z)
Optional Lead Bend Configuration
MDB & ZDB
MUB & ZUB
Suffixes
PIN ASSIGNMENT (Standard)
Package
TO-254 (M)
TO-254Z (Z) Pin 1
Drain Source
Gate
Pin 3
Pin 3
Pin 1
Pin 2
Pin 2
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00129F
DOC
相关型号：
SFF55N20Z
Power Field-Effect Transistor, 50A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254Z, 3 PIN
SSDI
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