SFF440JTXV [SSDI]
Power Field-Effect Transistor, 6.9A I(D), 500V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN;
| 型号： | SFF440JTXV |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Power Field-Effect Transistor, 6.9A I(D), 500V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN 局域网 开关 晶体管 |
| 文件： | 总3页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFF440J
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
8 AMP
N-Channel
Power MOSFET
500 Volts
DESIGNER’S DATA SHEET
Part Number / Ordering Information1/
SFF440 ___ ____
0.86 Ω
Screening2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
│
│
│
│
│
└
└
Features:
Rugged construction with polysilicon gate
Low RDS(on) and high transconductance
Excellent high temperature stability
Very fast switching speed
Fast recovery and superior dv/dt performance
Increased reverse energy capability
Low input and transfer capacitance for easy
paralleling
Package3/
J = TO-257
Hermetically sealed package
Low inductance leads
TX, TXV, S-Level screening available
Replaces: IRF440 types
Maximum Ratings
Symbol
VDS
Value
500
Units
Drain - Source Voltage
Gate - Source Voltage
V
V
VGS
±20
Max. Continuous Drain Current (package
limited) @ 25ºC
ID
6.9
-55 to +150
2
A
ºC
Operating & Storage Temperature
TOP & TSTG
RθJC
Maximum Thermal Resistance
(Junction to Case)
ºC/W
@ TC = 25ºC
@ TC = 55ºC
63
48
Total Power Dissipation
W
PD
NOTES:
TO-257
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Maximum current limited by package configuration
4/ Unless otherwise specified, all electrical characteristics @25oC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00087B
DOC
SFF440J
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics4/
Symbol Min
Typ Max Units
Drain to Source Breakdown Voltage
Drain to Source On State Resistance
V
GS = 0V, ID = 250 µA
BVDSS
RDS(on)
500
––
570
––
V
V
GS = 10V, ID = 60% Rated ID
0.65
0.86
Ω
On State Drain Current
Gate Threshold Voltage
VDS > ID(on) x RDS(on) Max, VGS = 10V
DS = VGS, ID = 250µA
DS ≥ 50V, ID = 60% Rated ID
ID(on)
VGS(th)
gfs
8
12
3.2
6
––
4.0
––
A
V
V
2.0
4.9
Forward Transconductance
Zero Gate Voltage
V
S(Ʊ)
V
DS = max rated voltage, VGS = 0V
––
––
0.015
5
25
250
IDSS
IGSS
μA
Drain Current
VDS = 80% Rated VDS, VGS = 0V, TA = 125oC
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
––
––
––
––
100
-100
At rated VGS
nA
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 10V
80% Rated VDS
ID = 8A
Qg
Qgs
Qgd
––
––
––
30
8
12
50
10
25
nC
V
DD = 50%
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
td(on)
tr
td(off)
tf
––
––
––
––
30
40
62
30
40
60
74
40
Rated VDS
ID= 8 A
RG = 9.1Ω
RD = 30Ω
nsec
V
Diode Forward Voltage
IS = Rated ID, VGS = 0V, Tj = 25oC
VSD
––
0.85
1.2
Diode Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
210
2
900
7.7
970
8.9
nsec
μC
Tj = 25oC, IF = Rated ID, di/dt = 100A/usec
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS = 0V
Ciss
Coss
Crss
––
––
––
1450
180
40
––
––
––
VDS = 25V
f = 1 MHz
pF
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00087B
DOC
SFF440J
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
TO-254 (J)
PIN ASSIGNMENT (Standard)
Package
TO-257 (J)
Drain
Pin 1
Source
Pin 2
Gate
Pin 3
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00087B
DOC
相关型号：
SFF440Z
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN
SSDI
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