SFF24N50M [SSDI]
24 AMP / 500 Volts 0.2 OHM N-Channel POWER MOSFET; 24 AMP / 500伏特， 0.2欧姆的N沟道功率MOSFET
| 型号： | SFF24N50M |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 24 AMP / 500 Volts 0.2 OHM N-Channel POWER MOSFET |
| 文件： | 总3页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFF24N50M
SFF24N50Z
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
24 AMP / 500 Volts
0.2 W
SFF24N50 __ __ __
Screening 2/ __ = Not Screen
TX = TX Level
N-Channel MOSFET
¦
¦
¦
¦
¦
¦
¦
¦
¦
+
¦
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¦
TXV = TXV Level
S = S Level
Features:
¦
+
Lead Option 3/ __ = Straight Leads
DB = Down Bend
· Rugged Construction with Polysilicon Gate Cell
· Low RDS(ON) and High Transconductance
· Excellent High Temperature Stability
· Very Fast Switching Speed
· Fast Recovery and Superior dV/dt Performance
· Increased Reverse Energy Capability
UB = Up Bend
Package 3/ M = TO-254
¦
+
Z = TO-254Z
· Low Input and Transfer Capacitance for Easy Paralleling
· Ceramic Seals for Improved Hermeticity
· Hermetically Sealed Surface Mount Power Package
· TX, TXV, Space Level Screening Available
· Replacement for IXTH24N50 Types
Maximum Ratings
Symbol
Value
500
±20
24
Units
Drain – Source Voltage
Gate – Source Voltage
Continuous Collector Current
Avalanche Current
VDS
VGS
ID
Volts
Volts
Amps
Amps
Repetitive
21
IAR
Repetitive
Single Pulse
1
690
EAR
EAS
Avalanche Energy
mJ
TC = 25ºC
TC = 55ºC
150
114
Power Dissipation
PD
Top & Tstg
RqJC
W
ºC
-55 to +150
0.83
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
ºC/W
TO-254 (M)
TO-254Z (Z)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00165F
DOC
SFF24N50M
SFF24N50Z
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics @ TJ = 25ºC
(Unless Otherwise Specified)
Drain to Source Breakdown Voltage
(VGS=0 V, ID=250 mA)
Symbol
BVDSS
RDS(on)
ID(on)
Min
Typ
––
Max
––
Units
Volts
500
––
24
2.0
8
Drain to Source On State Resistance
(VGS=10 V, ID=50% Rated ID)
––
0.2
––
W
A
On State Drain Current
(VDS>ID(on) X RDS(on) Max, VGS=10V)
––
Gate Threshold Voltage
(VDS=VGS, ID= 4mA)
VGS(th)
gfs
V
––
4.0
––
Forward Transconductance
(VDS>ID(on) X RDS(on) Max, IDS= 50% Rated ID)
mho
12
Zero Gate Voltage Drain Current
(VDS=max rated voltage, VGS=0 V)
(VDS=80% rated VDS, VGS=0 V, TA=125ºC)
––
––
––
––
250
1000
IDSS
mA
nA
nC
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
––
––
––
––
+100
-100
IGSS
At rated VGS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Qg
Qgs
Qgd
VGS=10 Volts
50% rated VDS
50% Rated ID
––
––
––
135
28
62
180
40
85
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
VDD=50% Rated VDS
50% Rated ID
RG= 6.2W
––
––
––
––
16
33
65
30
30
45
130
40
td(on)
tr
td(off)
nsec
V
VGS=10 Volts
tf
Diode Forward Voltage
(IS= Rated ID, VGS=0 V, TJ=25ºC)
VSD
––
––
1.5
TJ=25ºC
IF=10A
Di/dt=100A/msec
Diode Reverse Recovery Time
Reverse Recovery Charge
trr
QRR
nsec
nC
––
––
––
––
500
––
Input Capacitance
Input Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS=0 Volts
VDS=25 Volts
f=1 MHz
––
––
––
4200
450
135
––
––
––
pF
For thermal derating curves and other characteristics please contact SSDI Marketing Department.
PIN ASSIGNMENT (Standard)
Available Part Numbers:
Package
TO-254 (M)
TO-254Z (Z)
Drain
Pin 1
Pin 1
Source
Pin 2
Pin 2
Gate
Pin 3
Pin 3
SFF24N50M; SFF24N50MDB; SFF24N50MUB;
SFF24N50Z; SFF24N50ZDB; SFF24N50ZUB;
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00165F
DOC
SFF24N50M
SFF24N50Z
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Case Outline: TO-254 (M)
.150
.685
.665
.750
.500
Ø
.139
.155
.145
PIN 3
PIN 2
2x
.545
.535
PIN 1
.045
3x Ø
.035
.545
.535
.270
.240
.155
.140
.050
.040
.800
.790
SUFFIX: MDB
SUFFIX: MUB
Case Outline: TO-254Z (Z)
PIN 3
PIN 2
PIN 1
SUFFIX: ZDB
SUFFIX: ZUB
相关型号：
SFF24N50MDB
Power Field-Effect Transistor, 24A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN
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SFF24N50ZDB
Power Field-Effect Transistor, 24A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254Z, 3 PIN
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SFF24N50ZUB
Power Field-Effect Transistor, 24A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254Z, 3 PIN
SSDI
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