SFF15N100ZTX [SSDI]

Power Field-Effect Transistor;
SFF15N100ZTX
型号: SFF15N100ZTX
厂家: SOLID STATES DEVICES, INC    SOLID STATES DEVICES, INC
描述:

Power Field-Effect Transistor

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SFF15N100 Series  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
Part Number / Ordering Information 1/  
15 AMP , 1000 Volts, 340 m  
Avalanche Rated N-Channel  
MOSFET  
SFF15N100 ___ ___ ___  
Screening 2/  
__ = Not Screened  
TX = TX Level  
TXV = TXV Level  
S = S Level  
Features:  
Rugged poly-Si gate  
Lowest ON-resistance in the industry  
Avalanche rated  
Hermetically Sealed, Isolated Package  
Low Total Gate Charge  
Fast Switching  
Lead Option 3/  
__ = Straight Leads  
DB = Down Bend  
UB = Up Bend  
Package 3/ 4/  
S1 = SMD1  
M = TO-254  
Z = TO-254Z  
TX, TXV, S-Level screening available  
J = TO-257  
Improved (RDS(ON) QG) figure of merit  
Maximum Ratings5/  
Symbol  
VDSS  
Value  
Units  
V
Drain - Source Voltage  
1000  
±20  
±30  
continuous  
transient  
Gate – Source Voltage  
VGS  
ID1  
V
A
Max. Continuous Drain Current (package  
limited)  
15  
@ TC = 25°C  
@ TC = 25°C  
@ TC = 100°C  
ID2  
ID3  
25  
13  
Max. Instantaneous Drain Current (Tj limited)  
Single and Repetitive Avalanche Energy  
A
EAS  
EAR  
650  
1
mJ  
Total Power Dissipation  
250  
W
@ TC = 25°C  
PD  
Operating & Storage Temperature  
-55 to +150  
°C  
TOP & TSTG  
Maximum Thermal Resistance  
(Junction to Case)  
RθJC  
1.0 (typ.0.75) °C/W  
SMD1 (S1)  
TO-257 (J)  
TO-254 (M)  
TO-254Z (Z)  
NOTES:  
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.  
1/ For ordering information, price, and availability - contact factory.  
2/ Screening based on MIL-PRF-19500. Screening flows available on request.  
3/ For lead bending options / pinout configurations - contact factory.  
4/ Maximum current limited by package configuration  
5/ Unless otherwise specified, all electrical characteristics @25°C.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: FT0063A  
DOC  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
SFF15N100 Series  
Electrical Characteristics5/  
Symbol Min Typ Max Units  
Drain to Source Breakdown Voltage  
VGS = 0V, ID = 0.25 mA  
BVDSS  
1000 1030  
––  
V
Drain to Source On State  
Resistance  
––  
VGS = 10V, ID = 10A, Tj= 25°C  
VGS = 10V, ID = 10A, Tj=150°C  
310  
––  
340  
––  
RDS(on)  
m  
830  
––  
VDS = VGS, ID = 1 mA, Tj= 25°C  
VDS = VGS, ID = 1 mA, Tj= 125°C  
VDS = VGS, ID = 1 mA, Tj= -55°C  
2.5  
1.5  
––  
3.0  
2.0  
4.0  
3.5  
––  
4.5  
Gate Threshold Voltage  
VGS(th)  
V
VGS = ±20V, Tj= 25°C  
VGS = ±20V, Tj= 125°C  
––  
––  
1
10  
±100  
––  
Gate to Source Leakage  
IGSS  
nA  
––  
––  
––  
VDS = 900V, VGS = 0V, Tj = 25°C  
VDS = 900V, VGS = 0V, Tj = 150°C  
0.01  
6
2
150  
μA  
μA  
Zero Gate Voltage Drain Current  
IDSS  
Total Gate Charge  
Gate to Source Charge  
Gate to Drain Charge  
V
GS = 10V  
Qg  
Qgs  
Qgd  
––  
––  
––  
95  
12  
38  
150  
25  
60  
VDS = 150V  
nC  
ID = 10A  
Turn on Delay Time  
Rise Time  
Turn off Delay Time  
Fall Time  
V
V
GS = 10V  
DS = 150V  
ID = 10A  
td(on)  
tr  
td(off)  
tf  
––  
––  
––  
––  
35  
17  
130  
13  
75  
25  
200  
40  
nsec  
V
Diode Forward Voltage  
IF = 10A, VGS = 0V  
VSD  
––  
0.88  
1.1  
IF = 10A, di/dt = 100A/usec  
IF = 10A, di/dt = 100A/usec  
IF = 10A, di/dt = 100A/usec  
trr  
Irm  
Qrr  
––  
––  
––  
400  
27  
5.5  
600  
––  
––  
nsec  
A
μC  
Diode Reverse Recovery Time  
Reverse Recovery Charge  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
V
V
GS = 0V  
DS = 50V  
f = 1 MHz  
Ciss  
Coss  
Crss  
––  
––  
––  
2500  
290  
-
––  
––  
––  
pF  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: FT0063A  
DOC  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
SFF15N100 Series  
SMD1 (S1)  
TO-257 (J)  
TO-254 (M)  
TO-254Z (Z)  
Lead Bend Options  
for TO-254 (M) and TO-254Z (Z)  
PIN ASSIGNMENT (Standard)  
Package  
Drain  
Source  
Gate  
SMD1 (S1)  
Pin 1  
Pin 3  
Pin 2  
TO-257 (J)  
TO-254 (M)  
TO-254Z (Z)  
Pin 1  
Pin 1  
Pin 1  
Pin 2  
Pin 2  
Pin 2  
Pin 3  
Pin 3  
Pin 3  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: FT0063A  
DOC  

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