SFF130-3_1 [SSDI]
N-Channel Power MOSFET; N沟道功率MOSFET
| 型号： | SFF130-3_1 |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | N-Channel Power MOSFET |
| 文件： | 总2页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFF130/3 & SFF130/66
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
14 AMP / 100 Volts
0.18 Ω
SFF130__ __
Screening 2/
__ = Not Screen
N-Channel Power MOSFET
│
│
│
│
│
│
│
└
└
TX = TX Level
TXV = TXV Level
S = S Level
Features:
• Rugged Construction with Poly Silicon Gate
• Low RDS(ON) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
Package
/3= TO-3
/66= TO-66
• Fast Recovery and Superior dV/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Hermetically Sealed Package
TO-66
TO-3
• Available in both hot case and isolated versions
• Ideal for low power applications
2/
• TX, TXV, Space Level Screening Available
• Replacement for IRFF130 & 2N6756 Types
Maximum Ratings 3/
Drain – Source Voltage
Gate – Source Voltage
Symbol
VDS
Value
100
Units
Volts
Volts
VGS
±20
TC = 25ºC
TC = 100ºC
14
9
Continuous Collector Current
Power Dissipation
ID
Amps
Watts
TC = 25ºC
TA = 25ºC
25
19
PD
Operating & Storage Temperature
Top & Tstg
RθJC
-55 to +150
5
ºC
Thermal Resistance Junction to Case
ºC/W
Single Pulse Avalanche Energy
EAS
EAR
75
mJ
mJ
Repetitive Avalanche Energy
7.5
TO-66
TO-3
.165
.151
.675
.655
.135 MAX
2x Ø
.525 MAX
2x R.188 MAX
SEATING PLANE
.043
2x
.038
2
Ø.875
MAX
.440
.420
.225
.205
2x
1
.450
.250
1.197
1.177
2x .312 MIN
NOTES: 1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500/542.
3/ Unless Otherwise Specified, All Maximum Ratings and Electrical Characteristics @25ºC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00307B
DOC
SFF130/3 & SFF130/66
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics @ TJ = 25ºC
(Unless Otherwise Specified)
Symbol
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
(VGS=0 V, ID=250 μA)
Temperature Coefficient of Breakdown Voltage
BVDSS
Volts
100
––
––
––
––
ΔBVDSS
ΔTj
mV/ ºC
130
Drain to Source On State Resistance
(VGS=10 V )
Gate Threshold Voltage
ID=9A
ID=14A
0.13
0.14
0.18
0.21
RDS(on)
VGS(th)
gfs
––
Ω
V
2.0
4.6
2.8
7
4.0
––
(VDS=VGS, ID=250 μA )
Forward Transconductance
(VDS>ID(on) X RDS(on) Max, IDS= 9A)
Zero Gate Voltage Drain Current
mho
(VDS=80% max rated voltage, VGS=0 V)
(VDS=80% rated VDS, VGS=0 V, TA=125ºC)
––
––
––
––
25
250
μA
nA
nC
IDSS
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
––
––
––
––
+100
-100
IGSS
At rated VGS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Qg
Qgs
Qgd
VGS=10 Volts
50% rated VDS
Rated ID
12
1.5
5
17
3.7
7.0
35
10
20
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
VDD=50%
Rated VDS
50% rated ID
RG= 7.5Ω
td(on)
tr
td(off)
tf
––
––
––
––
9.5
42
22
25
35
80
60
45
nsec
V
Diode Forward Voltage
(IS= Rated ID, VGS=0 V, TJ=25ºC)
VSD
––
1
1.5
TJ=25ºC
IF=10A
Di/dt=100A/μsec
nsec
μC
Diode Reverse Recovery Time
Reverse Recovery Charge
trr
QRR
––
––
120
0.58
300
3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS=0 Volts
VDS=25 Volts
f=1 MHz
––
––
––
650
250
44
––
––
––
pF
For thermal derating curves and other characteristics please contact SSDI Marketing Department.
PIN ASSIGNMENT (Standard)
Available Part Number:
SFF130/3; SFF130/66
Package
TO-3
TO-66
Drain
Case
Case
Source
Pin 2
Pin 2
Gate
Pin 1
Pin 1
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00307B
DOC
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