SFF120-28Q [SSDI]
9.2 AMPS 100 VOLTS 0.35S QUAD N-CHANNEL POWER MOSFET; 9.2 AMPS 100伏特0.35S QUAD N沟道功率MOSFET
| 型号： | SFF120-28Q |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 9.2 AMPS 100 VOLTS 0.35S QUAD N-CHANNEL POWER MOSFET |
| 文件： | 总2页 (文件大小：265K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY
SFF120-28Q
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
9.2 AMPS
100 VOLTS
0.35S
QUAD N-CHANNEL
DESIGNER'S DATA SHEET
POWER MOSFET
FEATURES:
• Rugged construction with poly silicon gate
• Low RDS (on) and high transconductance
• Excellent high temperature stability
• Very fast switching speed
28 PIN CLCC
• Fast recovery and superior dv/dt performance
• Increased reverse energy capability
• Low input and transfer capacitance for easy paralleling
• Hermetically sealed surface mount package
• TX, TXV and Space Level screening available
• Replaces 4x IRF120 Types in One Package
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
VALUE
100
UNIT
Volts
Drain to Source Voltage
V
V
DS
Gate to Source Voltage
±20
Volts
GS
Continuous Drain Current
I
9.2
Amps
D
Operating and Storage Temperature
T
op
&T
-55 to +150
10
oC
stg
Thermal Resistance, Junction to Case (All Four)
R
oC/W
Watts
2JC
@ TC = 25oC
Total Device Dissipation
12.5
9.5
P
D
@ TC = 70oC
PACKAGE OUTLINE: 28
PIN OUT:
(3 PLACES)
MOSFET 1
DRAIN:
GATE:
5, 6, 7
1
SOURCE: 2, 3, 4
MOSFET 2
DRAIN:
GATE:
9, 10, 11
8
SOURCE: 12, 13, 14
MOSFET 3
DRAIN:
GATE:
19, 20, 21
15
SOURCE: 16, 17, 18
MOSFET 4
DRAIN:
GATE:
SOURCE: 26, 27, 28
23, 24, 25
22
NOTE: All drain/source pins must be connected on the PC board in order to
maximize current carrying capability and to minimize RDS (on)
NOTE: All specifications are subject to change without notification.
SCDs for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00225B
PRELIMINARY
SFF120-28Q
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
ELECTRICAL CHARACTERISTICS @ T =25oC (Unless Otherwise Specified)
J
SYMBOL
MIN
TYP
MAX
UNIT
V
RATING
Drain to Source Breakdown Voltage
(VGS =0 V, ID =250:A)
Drain to Source ON State Resistance
(VGS = 10 V, 60% of Rated ID)
100
-
BV
-
DSS
DS(on)
D(on)
S
R
I
-
-
-
0.35
-
ON State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10 V)
9.2
A
Gate Threshold Voltage
2.0
2.7
4.0
-
V
V
-
GS(th)
(VDS =VGS, ID =250:A)
Forward Transconductance
(VDS > ID(on) x RDS (on) Max, IDS =60% rated ID)
gf
s
4.1
S(É)
Zero Gate Voltage Drain Current
(V = max rated Voltage, V = 0V)
-
-
-
-
25
250
I
DS
GS
DSS
:A
(V = 80% rated V , V = 0V, T = 125oC)
DS
DS
GS
A
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
-
-
-
-
+100
-100
At rated VGS
I
GSS
nA
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 10 V
80% rated VDS
60% rated ID
Qg
Qgs
Qgd
-
-
-
10.7
2.9
5.1
16
4.4
7.7
nC
Turn on Delay Time
Rise Time
Turn off DELAY Time
Fall Time
VDD =50%
rated VDS
50% rated ID
RG = 18 S
t
-
-
-
-
13
30
19
20
20
45
29
30
d (on)
tr
nsec
V
t
d (off)
tf
Diode Forvard Voltage
V
-
-
2.5
SD
(I = rated I , V = 0V, T = 25oC)
S
D
GS
J
TJ =25oC
IF = rated ID
di/dt = 100A/:sec
Diode Reverse Recovery Time
Reverse Recovery Charge
t
rr
55
0.25
140
0.65
260
1.3
nsec
:C
Q
RR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS =0 Volts
VDS =25 Volts
f =1 MHz
Ciss
Coss
Crss
-
-
-
350
130
36
-
-
-
pF
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
NOTES:
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