SFF11N80MDBS [SSDI]
Power Field-Effect Transistor;
| 型号： | SFF11N80MDBS |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总2页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFF11N80 Series
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
11 AMP / 800 Volts
0.95 Ω
Part Number / Ordering Information 1/
SFF11N80 __ __ __
N-Channel MOSFET
Screening 2/ __ = Not Screen
TX = TX Level
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
TXV = TXV Level
S = S Level
Features:
Lead Option 3/ __ = Straight Leads
DB = Down Bend
• Rugged Construction with Polysilicon Gate Cell
• Low RDS(ON) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dV/dt performance
• Increased Reverse Energy Capability
UB = Up Bend
Package 3/ M = TO-254
Z = TO-254Z
• Low Input and Transfer Capacitance for Easy Paralleling
• Hermetically Sealed, Isolated Package
• Ceramic Seal Package Available. Contact Factory
• TX, TXV, S-Level screening available
• Replacement for IXTH11N80 Types
Maximum Ratings
Symbol
Value
Units
Drain – Source Voltage
Gate – Source Voltage
VDS
VGS
ID
800
±20
11
Volts
Volts
Amps
Continues Collector Current
150
114
TC = 25ºC
TC = 55ºC
Power Dissipation
PD
Top & Tstg
RθJC
W
ºC
Operating & Storage Temperature
-55 to +175
Maximum Thermal Resistance
0.83
ºC/W
Junction to Case
TO-254 (M)
TO-254Z (Z)
NOTE: All specifications are subject to change without notification.
DATA SHEET #: F00213C
DOC
SCD's for these devices should be reviewed by SSDI prior to release.
SFF11N80 Series
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics 4/
Symbol
BVDSS
RDS(on)
ID(on)
VGS(th)
IGSS
Min
800
––
Typ
––
Max
––
Units
Volts
Ω
Drain to Source Breakdown Voltage
(VGS = 0V, ID = 250µA)
Drain to Source On State Resistance
––
0.95
––
(VGS = 10V, ID = 5.5A)
On State Drain Current
11
––
A
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Gate Threshold Voltage
2.0
––
––
4.5
V
(VDS = VGS, ID = 250µA)
Gate to Source Leakage
––
±100
nA
(VGS = ±20V)
V
DS = 800V, TA = 25ºC
––
––
––
––
250
1.0
µA
Zero Gate Voltage Drain Current
IDSS
(VGS = 0V)
VDS = 640V, TA = 125ºC
mA
Forward Transconductance *
8.0
14
––
Mho
nC
gfs
(VDS > ID(on) x RDS(on) Max, ID = 5.5A)
V
GS = 10V
––
––
––
128
30
145
55
Total Gate Charge
Qg
Qgs
Qgd
VDS = 640V
ID = 5.5A
Gate to Source Charge
Gate to Drain Charge
55
80
––
––
––
––
20
33
63
32
50
50
Turn on Delay Time
td(on)
VDS = 400V
ID = 5.5A
Rise Time
t
r
nsec
100
50
Turn on Delay Time
Fall Time
td(off)
RG = 2.0Ω
t
f
Diode Forward Voltage *
––
––
––
––
1.5
V
VSD
trr
(IF = 11A, VGS = 0V)
Diode Reverse Recovery Time
550
nsec
(IF = 11A, di/dt = 100A/µsec)
V
GS = 0V
––
––
––
4200
360
––
––
––
Input Capacitance
Ciss
Coss
Crss
VDS = 25V
f = 1MHz
pF
Output Capacitance
100
Reverse Transfer Capacitance
NOTES:
*
Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
PIN ASSIGNMENT (Standard)
Available Part Numbers:
SFF11N80M; SFF11N80MDB; SFF11N80MUB;
Package
Drain
Pin 1
Pin 1
Source
Pin 2
Pin 2
Gate
Pin 3
Pin 3
SFF11N80Z; SFF11N80ZDB; SFF11N80ZUB;
TO-254 (M)
TO-254Z (Z)
相关型号：
SFF11N80ZDB
Power Field-Effect Transistor, 11A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN
SSDI
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