SDR956ZU [SSDI]
Rectifier Diode, 1 Phase, 1 Element, 50A, 600V V(RRM), Silicon, TO-254AA, HERMETIC SEALED, TO-254Z, 3 PIN;
| 型号： | SDR956ZU |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 50A, 600V V(RRM), Silicon, TO-254AA, HERMETIC SEALED, TO-254Z, 3 PIN 快速恢复二极管 局域网 |
| 文件： | 总2页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR953M & Z
Thru
SDR956M & Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
__ __ __ __
50A, 35nsec, 300-600 V
Hyper Fast Rectifier
SDR95
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+
Screening 2/ __ = Not Screened
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TX = TX Level
TXV = TXV Level
S = S Level
Features:
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·
·
·
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·
·
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·
Hyper Fast Recovery: 35nsec Maximum 3/
High Surge Rating
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+
Leg Bend Option
(See Figure 1)
+
Low Reverse Leakage Current
Low Junction Capacitance
Hermetically Sealed Low Profile Package
Gold Eutectic Die Attach Available
Ultrasonic Aluminum Wire Bonds
Higher Voltages and Faster Recovery Times
Available, Contact Factory
Package M = TO-254, Z = TO-254Z
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+
Voltage 3 = 300V, 4 = 400V,
5 = 500V, 6 = 600V.
·
·
Ceramic Seal for Improve d Hermeticity Available
TX, TXV, and S-Level Screening Available 2/
Maximum Ratings
Symbol
Value
Units
300
400
500
600
SDR953M & Z
SDR954M & Z
SDR955M & Z
SDR956M & Z
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
And DC Blocking Voltage
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C)
50
450
Io
IFSM
Amps
Amps
ºC
5/
Peak Surge Current
4/
(8.3 ms Pulse, Half Sine Wave, or equivalent DC)
-65 to +200
Operating & Storage Temperature
TOP & TSTG
Maximum Total Thermal Resistance
Junction to Case
RqJC
0.7
ºC/W
-
Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Recovery Conditions: I =.5 Amp, IR = 1A, IRR = .25A.
F
4/ Pins 2 and 3 Tied Together.
5/ Available with higher surge ratings.
-
TO -254 (M)
-
TO -254Z (Z)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0029C
DOC
SDR953M & Z
Thru
SDR956M & Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics
Symbol
Max
Units
4/
4/
Instantaneous Forward Voltage Drop
(IF = 25A, Pulse)
(IF = 50A, Pulse)
TA = 25 ºC
TA = 25 ºC
VF1
VF2
1.30
1.65
VDC
VDC
TA = -55 ºC
TA = 100 ºC
VF3
VF4
1.4
1.2
Instantaneous Forward Voltage Drop
(IF = 25Adc, Pulse)
Reverse Leakage Current
TA = 25 ºC, Rated V , Pulse
IR1
IR2
100
10
mA
mA
R
TA = 100 ºC, Rated V Pulse
R,
Reverse Recovery Time
(IF =.5 Amp, IR = 1A, IRR = .25A)
TA = 25 ºC
tRR
CJ
35
nsec
pF
Junction Capacitance
(VR = 10VDC, TA = 25ºC, f = 1MHz)
250
PIN ASSIGNMENT (TO-254 and TO-254Z Packages)
Figure 1- Optional Lead Bends
Code
Pin 1
Pin 2
Pin 3
FUNCTION
Cathode Anode
Anode
Notes:
1/ For or dering information, Price, Operating Curves, and
Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Recovery Conditions: I =.5 Amp, IR = 1A, IRR = .25A.
F
4/ Pins 2 and 3 Tied Together.
5/ Available with higher surge ratings.
Suffix MD & ZD
Suffix MU & ZU
TO -254 (Suffix M) Outline:
TO -254Z (Suffix Z) Outline:
NOTE: All specifications are subject to change without notification.
SCD's for these devices sh ould be reviewed by SSDI prior to release.
DATA SHEET #: RH0029C
DOC
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