SDR954ZDB [SSDI]
暂无描述;
| 型号： | SDR954ZDB |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 暂无描述 |
| 文件： | 总2页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR953M & Z
Thru
SDR956M & Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SDR95
50A, 35nsec, 300-600 V
Hyper Fast Rectifier
__ __ __ __
└
│
│
│
│
│
│
│
└
Screening 2/ __ = Not Screened
TX = TX Level
│
│
│
│
│
└
│
│
│
│
│
│
│
│
│
│
└
TXV = TXV Level
S = S Level
Features:
•
•
•
•
•
•
•
•
Hyper Fast Recovery: 35nsec Maximum 3/
High Surge Rating
Lead Bend Option
(See Figure 1)
Low Reverse Leakage Current
Low Junction Capacitance
Package M = TO-254, Z = TO-254Z
Hermetically Sealed Low Profile Package
Gold Eutectic Die Attach Available
Ultrasonic Aluminum Wire Bonds
Higher Voltages and Faster Recovery Times
Available, Contact Factory
Voltage 3 = 300V, 4 = 400V,
5 = 500V, 6 = 600V.
•
•
Ceramic Seal for Improved Hermeticity Available
TX, TXV, and S-Level Screening Available 2/
Maximum Ratings
Symbol
Value
Units
300
400
500
600
SDR953M & Z
SDR954M & Z
SDR955M & Z
SDR956M & Z
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
And DC Blocking Voltage
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C)
50
Io
Amps
5/
Peak Surge Current
450
IFSM
Amps
ºC
4/
(8.3 ms Pulse, Half Sine Wave, or equivalent DC)
-65 to +200
Operating & Storage Temperature
TOP & TSTG
Maximum Total Thermal Resistance
Junction to Case
1.2
ºC/W
RθJC
Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
3/ Recovery Conditions: IF =.5 Amp, IR = 1A, IRR = .25A.
4/ Pins 2 and 3 Tied Together.
5/ Available with higher surge ratings.
TO-254 (M)
TO-254Z (Z)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0029G
DOC
SDR953M & Z
Thru
SDR956M & Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics
Symbol
Max
Units
VDC
4/
4/
Instantaneous Forward Voltage Drop
(IF = 25A, Pulse)
(IF = 50A, Pulse)
TA = 25 ºC
TA = 25 ºC
1.30
1.65
VF1
VF2
TA = -55 ºC
TA = 100 ºC
1.4
1.2
VF3
VF4
VDC
Instantaneous Forward Voltage Drop
(IF = 25Adc, Pulse)
TA = 25 ºC, Rated VR , Pulse
TA = 100 ºC, 80% Rated VR, Pulse
200
10
Reverse Leakage Current
IR1
IR2
μA
mΑ
Reverse Recovery Time
(IF =.5 Amp, IR = 1A, IRR = .25A)
TA = 25 ºC
35
tRR
CJ
nsec
pF
Junction Capacitance
(VR = 10VDC, TA = 25ºC, f = 1MHz)
250
PIN ASSIGNMENT (TO-254 and TO-254Z Packages)
Code Pin 1 Pin 2
Cathode Anode
Figure 1- Optional Lead Bends
Pin 3
FUNCTION
.190
.150
.170
MIN
Anode
.170
MIN
.190
.150
Suffix DB
Suffix UB
TO-254 (Suffix M) Outline:
TO-254Z (Suffix Z) Outline:
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0029G
DOC
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